1577 patents
Page 48 of 79
Utility
Search Circuit
11 Nov 20
A search circuit capable of efficiently executing a search process while suppressing an increase in memory chips is provided.
Hideto MATSUOKA
Filed: 29 Mar 20
Utility
Semiconductor Device
11 Nov 20
A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode.
Tsutomu OKAZAKI, Akira KATO, Kan YASUI, Kyoya NITTA, Digh HISAMOTO, Yasushi ISHII, Daisuke OKADA, Toshihiro TANAKA, Toshikazu MATSUI
Filed: 21 May 20
Utility
Semiconductor device
9 Nov 20
A semiconductor device has a memory circuit and a logic circuit coupled with a memory circuit. the memory circuit included a memory array in which memory cells are arranged in a matrix, an input/output circuit for writing data to the memory cells and reading data from the memory cells, and a control circuit for generating a control signal for controlling the input/output circuit.
Yuichiro Ishii
Filed: 12 Nov 19
Utility
Manufacturing method of semiconductor device and semiconductor device
9 Nov 20
First and second p-type semiconductor regions (electric-field relaxation layers) are formed by ion implantation using a dummy gate and side wall films on both sides of the dummy gate as a mask.
Kenichi Hisada, Koichi Arai, Hironobu Miyamoto
Filed: 21 Feb 19
Utility
Semiconductor device
9 Nov 20
An semiconductor device capable of suppressing an increase in layout area can be provided.
Mitsuhiro Hotta
Filed: 15 Sep 19
Utility
Semiconductor device
9 Nov 20
A semiconductor device includes a memory cell array, a plurality of word lines, a plurality of bit line pairs, a column selection circuit coupling a bit line pair in a selected column in the plurality of bit line pairs to first and second output signal lines on the basis of a column selection signal, and a sense amplifier amplifying the voltage difference between the first and second output signal lines.
Yoshisato Yokoyama
Filed: 25 Feb 19
Utility
Control device and error correction methods
9 Nov 20
A control device capable of accurately detecting a rotor rotation angle is provided.
Hiroshi Shimada, Akane Abe
Filed: 16 Sep 19
Utility
Semiconductor device including bus controller
9 Nov 20
A semiconductor device according to the present invention includes a plurality of masters (100), a memory controller (400a), a bus that connects the plurality of masters (100) and the memory controller (400a), a QoS information register (610) that stores QoS information of the plurality of masters (100), a right grant number controller (602) that calculates the number of grantable access rights based on space information of a buffer (401) of the memory controller (400a), a right grant selection controller (603a) that selects the master (100) which will be granted the access right based on the QoS information of the QoS information register (610) and the number of grantable rights from the right grant number controller (602), and a request issuing controller (201a) that does not pass a request of the master (100) which has not been granted the access right from the right grant selection controller (603a).
Sho Yamanaka, Toshiyuki Hiraki, Yoshihiko Hotta, Takahiro Irita
Filed: 18 Oct 18
Utility
Semiconductor Device, Update Data-providing Method, Update Data-receiving Method, and Program
4 Nov 20
A semiconductor device includes a memory, a random number generation circuit, and a control circuit.
Daisuke MORIYAMA, Daisuke SUZUKI
Filed: 18 Jan 18
Utility
Semiconductor device
2 Nov 20
A semiconductor device includes a semiconductor substrate, a first well region formed on the semiconductor substrate, a first fin integrally formed of the semiconductor substrate on the first well region and extended in a first direction in a plan view, a first electrode formed on the first fin via a first gate insulating film, and extended in a second direction crossing the first direction in the plan view, a tap region formed on the semiconductor substrate adjacent to the first well region in the second direction, and supplying a first potential to the first well region, a second fin integrally formed of the semiconductor substrate on the tap region and extended in the first direction in the plan view, and a first wiring layer formed on the second fin in a portion overlapping the tap region in the plan view.
Makoto Yabuuchi, Yuichiro Ishii
Filed: 26 Feb 19
Utility
Motor driving apparatus and motor driving method
2 Nov 20
A motor driving apparatus includes a first driving control circuit (an MCU, a driving circuit, an input circuit, a power management IC) and a second driving control circuit (an MCU, a driving circuit, an input circuit, a power management IC).
Hiroaki Kawai, Shunsuke Nakano
Filed: 3 Apr 19
Utility
Power feeding system and negotiation controller
2 Nov 20
A power feeding system according to one embodiment includes a negotiation controller included in a power receiving device, a negotiation controller included in a power feeding device, and a determination unit that determines whether to allow power feeding from the power feeding device to the power receiving device.
Satoshi Otani
Filed: 18 Jul 17
Utility
Semiconductor Device and Method of Driving Semiconductor Device
28 Oct 20
A semiconductor device includes a first wiring having a first portion, a second portion, a third portion provided between the first portion and the second portion, memory cells connected to the third portion of the first wiring, a field effect transistor having a drain connected to the second portion, and a gate, and a second wiring provided in parallel with the first wiring.
Yoshisato YOKOYAMA, Makoto YABUUCHI
Filed: 9 Apr 20
Utility
Semiconductor Device and Method of Manufacturing the Same
28 Oct 20
A method of manufacturing a semiconductor device includes forming an interlayer insulating film over a main surface of a semiconductor substrate, forming a first conductive film pattern for a first pad and a second conductive film pattern for a second pad over the interlayer insulating film, forming an insulating film over the interlayer insulating film such that the insulating film covers the first and the second conductive film patterns, forming a first opening portion for the first pad, the first opening portion exposing a portion of the first conductive film pattern, and a second opening portion for the second pad, the second opening portion exposing a portion of the second conductive film pattern, in the insulating film, and forming a first plated layer by plating over the portion of the first conductive film pattern exposed in the first opening portion, and a second plated layer.
Takashi TONEGAWA
Filed: 12 Jul 20
Utility
Semiconductor Device and Manufacturing Method of the Same
28 Oct 20
On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed in the bulk silicon region.
Takaaki TSUNOMURA, Yoshiki YAMAMOTO, Masaaki SHINOHARA, Toshiaki IWAMATSU, Hidekazu ODA
Filed: 13 Jul 20
Utility
Oscillator Circuit
28 Oct 20
A small area oscillator circuit is provided.
Noriaki MATSUNO
Filed: 25 Mar 20
Utility
Controlling a High-side Switching Element Using a Bootstrap Capacitor
28 Oct 20
A monolithic integrated circuit for controlling a high-side switching element for a load using a bootstrap capacitor is disclosed.
Hans-Juergen BRAUN
Filed: 24 Jan 18
Utility
Drive Device, Power Supply System, and Method of Testing Drive Device
28 Oct 20
A drive device comprises a sensor for detecting a state of stress applied to a power transistor, a threshold voltage setting circuit for outputting a threshold voltage, an anomaly monitor circuit for determining whether or not a state of stress is abnormal by comparing a detected voltage of the sensor with the threshold voltage, and a control circuit for fixing the power transistor to either on or off when the state of stress is determined to be abnormal by the anomaly monitor circuit.
Shunichi KAERIYAMA
Filed: 5 Apr 20
Utility
Over-temperature Protection Circuit
28 Oct 20
An over-temperature protection circuit is described.
Hans-Juergen BRAUN
Filed: 22 Jan 18
Utility
Semiconductor Device
28 Oct 20
A semiconductor device includes first and second power supply terminals to which a first power supply voltage is supplied, a third power supply terminal to which a second power supply voltage is supplied, a power supply wiring coupled to the first and second power supply terminals, an abnormality detection circuit which diagnoses the first power supply terminal, a first current generation circuit which flows a current from the power supply wiring to the third power supply terminal in a diagnosis, and a second current generation circuit which couples to the power supply wiring at a vicinity of the first power supply terminal and flows a current from the power supply wiring to the third power supply terminal in the diagnosis.
Hirotsugu NAKAMURA
Filed: 23 Mar 20