1577 patents
Page 51 of 79
Utility
Semiconductor Device
30 Sep 20
The semiconductor device controls the first circuit for supplying/stopping the current supplied by a DC power supply to the latching solenoid consisting of a coil and a movable iron core and a permanent magnet, the current is measured based on the input from the current detection circuit.
Shiro KAMOHARA, Kazuya UEJIMA
Filed: 15 Mar 20
Utility
Current Detection Circuit, Semiconductor Device, and Semiconductor System
30 Sep 20
The present invention provides a current detection circuit, semiconductor device, and a semiconductor system suitable for improving a current sensing accuracy.
Keisuke KIMURA, Hideyuki TAJIMA, Wataru SAITO
Filed: 15 Mar 20
Utility
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30 Sep 20
Generate an RTL description that implements any functional safety system.
Shintaro IMAMURA
Filed: 15 Mar 20
Utility
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30 Sep 20
A first comparator compares first input data with second input data, and provides one when the first input data is larger than the second input data and zero when the first input data is equal to or smaller than the second input data as a first comparison result.
Hanno LIESKE
Filed: 6 Dec 17
Utility
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30 Sep 20
In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.
Kazuya UEJIMA, Shiro KAMOHARA, Michio ONDA, Takashi HASE, Tatsuo NISHINO
Filed: 13 Nov 17
Utility
2xnowuon0l6ppztdiuudy4u
28 Sep 20
A semiconductor device provided with: a first input/output circuit connected to a first pad; a second input/output circuit disposed in the direction along one side constituted by a chip edge in relation to the first input/output circuit, the second input/output circuit being connected to a second pad; and an ESD protective circuit disposed near the outer-side chip edge of the first and second input/output circuits.
Satoshi Maeda, Yasuyuki Morishita, Masanori Tanaka
Filed: 18 Jun 15
Utility
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28 Sep 20
In an SOI substrate having a semiconductor substrate serving as a support substrate, an insulating layer on the semiconductor substrate and a semiconductor layer on the insulating layer, an element isolation region which penetrates the semiconductor layer and the insulating layer and whose bottom part reaches the semiconductor substrate is formed, and a gate electrode is formed on the semiconductor layer via a gate insulating film.
Hiroki Shinkawata
Filed: 22 Jun 17
Utility
dnoggl4z23ju0a48fdg j76g2ezujcprw7i
28 Sep 20
A semiconductor device with improved performance.
Makoto Koshimizu, Komaki Inoue, Hideki Niwayama
Filed: 15 Jul 18
Utility
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28 Sep 20
A semiconductor device includes a control unit which controls charging/discharging of a secondary battery, a bidirectional coupling unit which is electrically coupled to the control unit and through which a charging/discharging current flows, and a protection diode coupled between the control unit and the bidirectional coupling unit.
Keita Mochizuki, Kensuke Nakashima, Takahiro Korenari, Kouji Nakajima
Filed: 27 Nov 18
Utility
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21 Sep 20
The phase error detection unit PHED detects the phase error PERR between the phase of the BEMF and the phase of the phase switching signal COMM (masking signal MSK) at each of a plurality of detection timings that become the zero crossing timings of the BEMF in the mechanical angular cycle.
Minoru Kurosawa, Kichiya Itagaki
Filed: 30 Apr 19
Utility
p80qvlupmcqstdxihe8eespdu7zbcgz6xaapaqap3yx2oa3qddknlcccu7y
21 Sep 20
To provide a communication device that can suppress radio wave interference in communication using a plurality of frequency signals in a simply method, a communication device includes a first communication unit that communicates with a first external device by using a first frequency signal, a second communication unit that communicates with a second external device by using a second frequency signal, and a control unit that controls, when one of the first and second communication units transmits data to a corresponding one of the first and second external devices, the other of the first and second communication units not to receive data.
Yasuhiro Sagesaka, Suguru Fujita
Filed: 19 Jun 19
Utility
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21 Sep 20
A semiconductor device includes a voltage sensor which samples a power supply voltage at a speed faster than fluctuations in the power supply voltage and encodes the power supply voltage into a voltage code value.
Yuko Kitaji, Kazuki Fukuoka, Ryo Mori, Toshifumi Uemura
Filed: 12 Dec 18
Utility
envzks4lzowk8hzx1s rforigiqtbu833n91nsrkvwz4hv0l
21 Sep 20
To provide a semiconductor device which suppresses a delay in processing.
Nhat Van Huynh, Seiji Mochizuki, Katsushige Matsubara, Toshiyuki Kaya
Filed: 10 Sep 18
Utility
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16 Sep 20
A semiconductor device includes a transmission control unit which performs transmission processing, an area determination unit which determines whether an own vehicle is located in an intersection area, and an operation mode determination unit which determines either a control mode or a terminal mode as an operation mode of a radio terminal device based on an identification information for identifying a source of a received communication frame, and a determination result by the area determination unit.
Hiroshi CHANO, Suguru FUJITA
Filed: 11 Mar 20
Utility
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16 Sep 20
The electronic device includes first and second semiconductor components.
Wataru SHIROI, Shuuichi KARIYAZAKI
Filed: 11 Mar 20
Utility
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16 Sep 20
A semiconductor device includes a semiconductor substrate SUB, a semiconductor layer EP formed on the semiconductor substrate SUB, a buried layer PBL formed between the semiconductor layer EP and the semiconductor substrate SUB, an isolation layer PiSO formed in the semiconductor layer EP so as to be in contact with the buried layer PBL, and a conductive film FG formed over the isolation layer PiSO via an insulating film IF, whereby a first capacitive element including the conductive film FG as an upper electrode, the insulating film IF as a capacitive insulating film, and the isolation layer PiSO as a lower electrode, is formed over the semiconductor substrate SUB.
Eisuke KODAMA
Filed: 8 Mar 20
Utility
4on9tbpn7otzqz686tp9wzsqrsrmgqcaa2
16 Sep 20
A semiconductor device includes: a fin that is a portion of a semiconductor substrate, protrudes from a main surface of the semiconductor substrate, has a width in a first direction, and extends in a second direction; a control gate electrode that is arranged on the fin via a first gate insulating film and extends in the first direction; and a memory gate electrode that is arranged on the fin via a second gate insulating film and extends in the first direction.
Tomohiro YAMASHITA
Filed: 28 May 20
Utility
u0io3lnmynjymtbp9awowz8ggn77a21x1bt2vcaxu8thq80bgullh8
16 Sep 20
A semiconductor device includes a cladding layer and a first optical waveguide.
Tetsuya IIDA, Yasutaka NAKASHIBA
Filed: 5 Mar 20
Utility
4qoasgf enapjm9moty05cy9s121qspb3wfxf3zjyrmt4ocgpl6z
16 Sep 20
To suppress the occurrence of system shutdown after long term storage of batteries.
Tsuyoshi OTA, Youhei KENGOYAMA
Filed: 10 Mar 20
Utility
2ysplnsk3dmwi5uovse0loajviig0wk0sfmkb3z857
16 Sep 20
The decoding method is a decoding method for decoding a bitstream, in which a difference between a reference index and a prediction value of a motion vector is used for each block obtained by dividing each frame of a moving picture in which a plurality of frames are consecutive, in which a plurality of groups having a predetermined number of blocks are defined in each frame and a limitation is applied for each group to a range of reference index and differences of blocks other than the first block in the group, and the decoding method includes a step for determining whether the block to be decoded is the first block of the group, a step for decoding using the reference index and difference if the block is not the first block, and a step for decoding using the limited reference index and differences if the block is not the first block.
Ryoji HASHIMOTO, Seiji MOCHIZUKI
Filed: 5 Mar 20