1577 patents
Page 67 of 79
Utility
Semiconductor device
24 Feb 20
A semiconductor device includes a first and second semiconductor chips, a resistive component, and a semiconductor chip including a first circuit coupled to electrodes on both ends of the resistive component.
Kuniharu Muto, Ryo Kanda
Filed: 3 Oct 18
Utility
Method for manufacturing a semiconductor device
24 Feb 20
The improvement of the reliability of a semiconductor device having a split gate type MONOS memory is implemented.
Tatsuyoshi Mihara
Filed: 9 Sep 18
Utility
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24 Feb 20
Provided is a communication system capable of transmitting an emergency notification with a short delay without waiting until the completion of a current transmission of a frame or retransmitting the frame.
Yasutake Manabe
Filed: 20 Dec 17
Utility
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17 Feb 20
A semiconductor device enabling expansion of a noise margin.
Kiyotada Funane, Ken Shibata, Yasuhisa Shimazaki
Filed: 16 Jan 19
Utility
yw1x10k6p7hpfkfqknq71fsif3soetiyoiiriqsqdhlk3fs6mfyx0c
17 Feb 20
To reduce a time required for verify processing of a semiconductor storage device, a semiconductor storage device according to one embodiment includes a plurality of unit memory arrays each including a plurality of memory blocks, a sense amplifier, and a verify circuit.
Yoji Kashihara
Filed: 29 Jul 18
Utility
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17 Feb 20
Characteristics of a semiconductor device are improved.
Yasuhiro Okamoto, Takashi Ide
Filed: 1 Aug 18
Utility
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17 Feb 20
Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad.
Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
Filed: 22 Jul 19
Utility
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17 Feb 20
Reliability of a semiconductor module is improved.
Kuniharu Muto, Koji Bando
Filed: 2 May 18
Utility
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17 Feb 20
Data hold time is controlled without excessively increasing a circuit area.
Makoto Yabuuchi
Filed: 18 Mar 18
Utility
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17 Feb 20
The performances of a semiconductor device are improved.
Yotaro Goto, Takeshi Kamino, Fumitoshi Takahashi
Filed: 19 Feb 18
Utility
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17 Feb 20
In a solid state image sensor having two semiconductor substrates or more laminated longitudinally, electrical connection between the semiconductor substrates is made by a fine plug.
Yotaro Goto, Tatsuya Kunikiyo, Hidenori Sato
Filed: 16 May 18
Utility
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17 Feb 20
A first semiconductor device having a power transistor for switching is mounted on a power wiring substrate PB1; a semiconductor device PKG6 having a driving circuit for driving the first semiconductor device and a semiconductor device PKG5 having a control circuit for controlling the semiconductor device PKG6 are mounted on a first principal surface of a control wiring substrate PB2; and a semiconductor device PKG4 having a regulator circuit is mounted on a second principal surface of the control wiring substrate PB2.
Shinji Nishizono, Tadashi Shimizu, Tomohiro Nishiyama, Norikazu Motohashi
Filed: 13 Sep 15
Utility
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12 Feb 20
This invention is to improve a performance of a semiconductor device.
Yoshiyuki KAWASHIMA, Takashi HASHIMOTO
Filed: 16 Oct 19
Utility
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12 Feb 20
Reliability of a semiconductor device is improved.
Tomohiko AIKA, Takayuki IGARASHI, Takehiro OCHI
Filed: 25 Jul 19
Utility
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10 Feb 20
An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes.
Koji Maekawa, Tatsuyoshi Mihara
Filed: 10 Apr 18
Utility
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10 Feb 20
To downsize a semiconductor device that includes a non-volatile memory and a capacitive element on a semiconductor substrate.
Tomohiro Yamashita, Tamotsu Ogata, Masamichi Fujito, Tomoya Saito
Filed: 6 Feb 19
Utility
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10 Feb 20
A substrate in which an insulating layer, a semiconductor layer and an insulating film are stacked on a semiconductor substrate and an element isolation region is embedded in a trench is prepared.
Yoshiki Yamamoto
Filed: 10 Jun 18
Utility
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10 Feb 20
An offset spacer film (OSS) is formed on a side wall surface of a gate electrode (NLGE, PLGE) to cover a region in which a photo diode (PD) is disposed.
Takeshi Kamino, Takahiro Tomimatsu
Filed: 21 May 19
Utility
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10 Feb 20
A semiconductor device in which unwanted change in the secondary data which must be reliable is suppressed and the need for a considerable increase in the capacity of a memory unit can be avoided.
Yoshikazu Sato, Haruhiko Matsumi
Filed: 10 May 18
Utility
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10 Feb 20
The present invention enables an unaligned access of a DMA controller to be dealt at the time of obtaining trace data.
Keiichi Kuwabara, Takuya Mitsuhashi
Filed: 20 May 18