1577 patents
Page 70 of 79
Utility
Manufacturing method of semiconductor device
20 Jan 20
In a manufacturing method of a semiconductor device according to the present invention, a buffer layer including a first nitride semiconductor layer, a channel layer including a second nitride semiconductor layer, and a barrier layer including a third nitride semiconductor layer are sequentially laminated, and a fourth nitride semiconductor layer is further laminated thereover.
Yasuhiro Okamoto
Filed: 4 Jul 18
Utility
On-vehicle communication device, communication control method and vehicle
20 Jan 20
An on-vehicle communication device has a communication unit which communicates with a roadside device, a roadside device position information storage unit which stores in advance first position information indicating a position of the roadside device, a vehicle position information acquisition unit which acquires second position information indicating a position of the vehicle, an approach decision unit which decides whether the vehicle approaches the roadside device on the basis of the first position information stored in the roadside device position information storage unit and the second position information that the vehicle position information acquisition unit acquires and a communication control unit which switches a state of the communication unit from a power-saving state to a non-power-saving state in a case where the approach decision unit decides that the vehicle approaches the roadside device.
Yasuhiro Sagesaka
Filed: 20 Aug 18
Utility
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15 Jan 20
Takashi KURAFUJI, Satoshi YAMAMOTO
Filed: 23 Jun 19
Utility
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15 Jan 20
A semiconductor device includes: a first conductivity type semiconductor substrate made of silicon carbide; a second conductivity type body region in a device region of the semiconductor substrate; a first conductivity type source region formed in the body region; and a gate electrode formed on the body region through gate insulating films.
Kenichi HISADA, Koichi ARAI
Filed: 22 Sep 19
Utility
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15 Jan 20
A semiconductor device capable of reducing the influence of noise and easily securing a breakdown voltage between a source wiring and a drain wiring constituting a capacitance between a source and a drain even when shrinkage of a cell progresses, and a manufacturing method thereof are provided.
Yoshiaki UEDA, Satoru TOKUDA, Satoshi UCHIYA, Hiroyoshi KUDOU
Filed: 18 Jun 19
Utility
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13 Jan 20
The present disclosure provides a technique of suppressing competition of processes in a semiconductor device employing a multilayer bus configuration.
Takashi Yamaguchi
Filed: 8 Aug 18
Utility
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8 Jan 20
A QFP has a die pad on which a semiconductor chip is mounted, a plurality of inner parts disposed around the die pad, a plurality of outer parts respectively connected with the plurality of inner parts, a plurality of wires electrically connect the bonding pads of the semiconductor chip and the plurality of inner parts, and a sealing body that seals the semiconductor chip.
Noriyuki TAKAHASHI
Filed: 19 Sep 19
Utility
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8 Jan 20
Yoshiki YAMAMOTO, Hideki MAKIYAMA, Toshiaki IWAMATSU, Takaaki TSUNOMURA
Filed: 18 Sep 19
Utility
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8 Jan 20
A semiconductor device includes a plurality of first wires formed in a first layer, a plurality of second wires formed to intersect the plurality of first wires in a second layer stacked on the first layer, a plurality of first vias formed at intersections of the plurality of first wires and the plurality of second wires, and an inductor formed in a third layer stacked on the first layer and the second layer.
Shinichi Uchida
Filed: 19 Sep 19
Utility
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6 Jan 20
A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance.
Hiroyuki Kunishima, Yasutaka Nakashiba, Masaru Wakabayashi, Shinichi Watanuki
Filed: 30 Oct 17
Utility
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6 Jan 20
A substrate including an insulating layer, a semiconductor layer, and an insulating film stacked on a semiconductor substrate and having a trench filled with an element isolation portion is provided.
Takahiro Maruyama, Yoshiki Yamamoto, Toshiya Saitoh
Filed: 14 Nov 18
Utility
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6 Jan 20
A semiconductor device includes a semiconductor substrate, a gate electrode, and a first contact plug.
Taro Moriya, Hiroyoshi Kudou, Hiroshi Yanagigawa
Filed: 4 Jul 18
Utility
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6 Jan 20
An oil-pump motor drive apparatus includes a current detection unit for detecting each of multi-phase currents flowing through coils of a stator, a control unit for converting the detected multi-phase currents into a d-axis current Id and a q-axis current Iq, calculating a phase error between an actual rotational position of the rotor and an imaginary rotational position by comparing the d-axis current Id with a d-axis current command value Idref and comparing the q-axis current Iq with the d-axis current command value Idref, performing control so that the phase error gets closer to zero, and outputting voltage command values indicating voltages to be applied to respective phases of the brushless motor, to a motor drive circuit, in which the control unit sets the d-axis current command value Idref to a value larger than zero when the number of revolutions of the motor is smaller than a predetermined number.
Naohiko Aoki, Kiyoshi Ishikawa
Filed: 1 May 18
Utility
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6 Jan 20
A semiconductor device includes a reference voltage generation circuit configured to generate reference voltages Va and Vb capable of adjusting a primary temperature characteristic, and an oscillation circuit configured to output an oscillation signal using the reference voltages Va and Vb, in which the oscillation circuit includes a frequency/current conversion circuit that is driven by the reference voltage Va and outputs a current Ie in accordance with a frequency of a feedback signal, a control voltage generation circuit configured to generate a control voltage in accordance with a potential difference between a voltage in accordance with the current Ie and the reference voltage Vb, a voltage control oscillation circuit configured to output the oscillation signal having a frequency in accordance with the control voltage, and a frequency division circuit configured to divide a frequency of the oscillation signal and output the resulting signal as the feedback signal.
Guoqiang Zhang, Kosuke Yayama
Filed: 21 Mar 18
Utility
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6 Jan 20
In a semiconductor device, a sine wave signal is input to a first input part and a cosine wave signal is input to a second input part.
Kazuaki Kurooka, Yoshihiro Funato
Filed: 9 Jul 18
Utility
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1 Jan 20
An additional test pattern acquiring unit acquires a test pattern, which is not yet executed to the semiconductor device serving as a target of executing an additional test among test patterns stored in a test pattern information DB, as an additional test pattern with reference to a semiconductor manufacturing history information DB.
Kazuhiro NISHIMURA, Yoshiyuki MATSUMOTO, Naoki YAMADA
Filed: 19 Jun 19
Utility
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1 Jan 20
It is an object of the present invention to provide a technique capable of reducing power consumption of a semiconductor device even when the semiconductor device operates at high speed.
Naotaka KAWAKAMI, Toshiro FUJISAKI
Filed: 18 Jun 19
Utility
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1 Jan 20
To provide a communication device that can suppress radio wave interference in communication using a plurality of frequency signals in a simply method, a communication device includes a first communication unit that communicates with a first external device by using a first frequency signal, a second communication unit that communicates with a second external device by using a second frequency signal, and a control unit that controls, when one of the first and second communication units transmits data to a corresponding one of the first and second external devices, the other of the first and second communication units not to receive data.
Yasuhiro SAGESAKA, Suguru FUJITA
Filed: 19 Jun 19
Utility
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1 Jan 20
Motoo AKASAKA, Satoshi KANEKO, Naoki AONO, Yutaka WATANABE, Takayuki KOKAWA
Filed: 23 Jun 19
Utility
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1 Jan 20
A semiconductor device includes a distortion correction unit that performs correct distortion processing on a captured image, a SRAM that stores image data after the distortion correction processing, a filter processing unit that receives the image data after the distortion correction processing from the SRAM and that performs smoothing filter processing on the image data after the distortion correction processing, after the image data after the distortion correction processing having a size required for the smoothing filter processing is stored in the SRAM, and an image reduction unit that performs reduction processing on image data after the smoothing filter processing.
Akihiro YAMAMOTO
Filed: 18 Jun 19