1577 patents
Page 75 of 79
Utility
Semiconductor Device
27 Nov 19
Performance of a semiconductor device is improved.
Shuuichi KARIYAZAKI, Kazuyuki NAKAGAWA, Keita TSUCHIYA, Yosuke KATSURA, Shinji KATAYAMA, Norio CHUJO, Masayoshi YAGYU, Yutaka UEMATSU
Filed: 6 May 19
Utility
Semiconductor Device
27 Nov 19
The terminal pattern TP1 of the wiring substrate PB has a side T1a facing the terminal pattern TP2 and the terminal pattern TP2 of the wiring substrate PB has a side T2a facing the side T1a of the terminal pattern TP1.
Takashi KARASHIMA
Filed: 5 May 19
Utility
Semiconductor Device and Debug Method
27 Nov 19
Yuta ARAI, Kyoko HASEGAWA, Hiroyuki SASAKI
Filed: 7 May 19
Utility
Method for Manufacturing a Semiconductor Device
27 Nov 19
The manufacturing method of the semiconductor device includes a step of forming the gate dielectric film GI2 and the polysilicon layer PS2 on the main surface SUBa of the semiconductor substrate SUB, a step of forming the isolation trench TR in the semiconductor substrate SUB through the polysilicon layer PS2 and the gate dielectric film GI2, a step of filling the isolation trench TR with the dielectric film, and then a step of polishing the dielectric film to form the element isolation film STI in the isolation trench TR.
Yuto OMIZU, Takashi HASHIMOTO, Hideaki YAMAKOSHI
Filed: 5 May 19
Utility
Semiconductor device
25 Nov 19
The semiconductor device includes a supply circuit for supplying a boosted voltage to a distal end of a wiring driven by a drive signal.
Shinji Tanaka, Makoto Yabuuchi
Filed: 13 Nov 17
Utility
Semiconductor integrated circuit system with termination circuit
25 Nov 19
A semiconductor integrated circuit is described.
Masayasu Komyo, Yoichi Iizuka
Filed: 24 Oct 18
Utility
Semiconductor device
25 Nov 19
In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member.
Hajime Hasebe, Tadatoshi Danno, Yukihiro Satou
Filed: 24 Sep 18
Utility
Semiconductor device and manufacturing method thereof
25 Nov 19
This invention is to improve a performance of a semiconductor device.
Yoshiyuki Kawashima, Takashi Hashimoto
Filed: 23 Feb 18
Utility
Semiconductor device
25 Nov 19
An area of a semiconductor device having a FINFET can be reduced.
Takeshi Okagaki, Koji Shibutani, Makoto Yabuuchi, Nobuhiro Tsuda
Filed: 5 Aug 18
Utility
Semiconductor device and method of manufacturing the same
25 Nov 19
When a void is caused in an interlayer insulating film on a semiconductor substrate, the invention prevents short circuit between two or more contact plugs that sandwich the void therebetween via a conductive film buried in the void at the time of formation of the contact plugs.
Takao Kamoshima, Kojiro Horita, Shuji Matsuo
Filed: 22 Aug 17
Utility
Semiconductor device and manufacturing method thereof
25 Nov 19
A semiconductor device and a manufacturing method thereof according to the present invention include: a first pad electrode formed in an uppermost wiring layer of a multilayer wiring layer; a first insulating film formed on the first pad electrode; and a first organic insulating film formed over the first insulating film.
Tatsuya Usami
Filed: 22 May 18
Utility
Semiconductor device
25 Nov 19
A semiconductor device includes a memory unit having a memory cell driven by a voltage applied from power supply lines VSS and VDD, and a memory unit potential controller for adjusting the potential of the voltage applied to the memory cell.
Yoshisato Yokoyama, Takeshi Hashizume, Toshiaki Sano
Filed: 6 Mar 18
Utility
Method of manufacturing semiconductor device
25 Nov 19
In manufacturing a trench type MOSFET, reliability of a semiconductor device is prevented from being degraded due to a short circuit or lowering of withstand voltage between a trench gate electrode and a source region.
Kazuya Horie, Katsuhiro Uchimura, Kazuhiro Toi, Masakazu Nakano
Filed: 5 Jul 17
Utility
Electronic device
25 Nov 19
An electronic device has a first bus bar (conductor plate) connected to a first semiconductor device (semiconductor part) having a first power transistor; and a second bus bar (conductor plate) connected to a second semiconductor device (semiconductor part) having a second power transistor.
Tomohiro Nishiyama
Filed: 2 May 18
Utility
Semiconductor device, control method of semiconductor device, and feeding system
25 Nov 19
Dan Aoki
Filed: 21 Mar 17
Utility
Semiconductor device, position detection device, and control method of semiconductor device
25 Nov 19
A reception unit (13) sequentially selects a plurality of sensor coils and receives a signal from a position indicator via the sensor coil that has been selected, and an operational circuit (14) detects, using an amplitude value and a phase value of the signal received by the reception unit (13) via each of the plurality of sensor coils, coordinates of a position indicated by the position indicator and a writing force of the position indicator.
Masato Hirai, Kosuke Fuwa
Filed: 15 Apr 17
Utility
Multi-processor and multi-processor system for code debugging
25 Nov 19
The size of a multi-processor is prevented from increasing even when the number of processor cores is increased.
Motoyasu Takabatake, Hisashi Shiota, Atsushi Nakamura, Yuji Chiba
Filed: 23 Oct 17
Utility
Data Processing Device
20 Nov 19
A data processing device that can monitor properly the state of the interrupt processing of a virtual machine is provided.
Yasuhiro SUGITA
Filed: 5 May 19
Utility
Semiconductor Device and Method of Manufacturing the Same
20 Nov 19
An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede.
Takeshi KAWAMURA
Filed: 29 Jul 19
Utility
Semiconductor Device and Method of Manufacturing the Same
20 Nov 19
A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film.
Tadashi YAMAGUCHI
Filed: 9 May 19