1577 patents
Page 76 of 79
Utility
Biological Information Collection System, Input Device, and Biological Information Collection Device
20 Nov 19
The current health information and the biological information are synchronized and associated with each other.
Takeshi FUKUNAGA
Filed: 30 Apr 19
Utility
Semiconductor Device and Method of Manufacturing the Same
20 Nov 19
A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film.
Tadashi YAMAGUCHI
Filed: 9 May 19
Utility
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20 Nov 19
A semiconductor device includes a semiconductor substrate, a memory cell formed on the semiconductor substrate, a word line connected to the memory cell, and an auxiliary line connected to the word line.
Yuta YOSHIDA, Makoto YABUUCHI, Yoshisato YOKOYAMA
Filed: 30 Jul 19
Utility
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18 Nov 19
A semiconductor device, a semiconductor system, and a control method of a semiconductor device are capable of accurately monitoring the lowest operating voltage of a circuit to be monitored.
Kazuki Fukuoka, Toshifumi Uemura, Yuko Kitaji, Yosuke Okazaki, Akira Murayama
Filed: 13 Sep 17
Utility
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18 Nov 19
A semiconductor device includes a first mode and a second mode different from the first mode, includes a memory circuit including a first switch, a memory array, and a peripheral circuit.
Yuichiro Ishii, Atsushi Miyanishi, Kazumasa Yanagisawa
Filed: 10 Feb 19
Utility
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18 Nov 19
Provided is a semiconductor device having improved performance.
Masaaki Shinohara
Filed: 10 May 17
Utility
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18 Nov 19
Characteristics of a semiconductor device are improved.
Takayuki Igarashi, Takuo Funaya
Filed: 29 Jul 18
Utility
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18 Nov 19
A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third transistor and a sixth transistor are disposed; and a fourth active region separated from the third active region, in which a fourth transistor is disposed.
Masao Morimoto, Noriaki Maeda, Yasuhisa Shimazaki
Filed: 5 Sep 18
Utility
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18 Nov 19
A semiconductor device is obtained in which a first insulating film for a gate insulating film of a memory element is formed over a semiconductor substrate in a memory region, a second insulating film for a gate insulating film of a lower-breakdown-voltage MISFET is formed over the semiconductor substrate in a lower-breakdown-voltage MISFET formation region, and a third insulating film for a gate insulating film of a higher-breakdown-voltage MISFET is formed over the semiconductor substrate in a higher-breakdown-voltage MISFET formation region.
Hideaki Yamakoshi, Takashi Hashimoto, Shinichiro Abe, Yuto Omizu
Filed: 18 Jun 18
Utility
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18 Nov 19
A method of manufacturing a semiconductor device includes forming a first insulating film having a first thickness over a main surface of a semiconductor substrate and then forming a second insulating film having a second thickness larger than the first thickness over the first insulating film, sequentially processing the second insulating film, the first insulating film, and the semiconductor substrate to form a plurality of trenches and to form a plurality of projecting portions which include portions of the semiconductor substrate extending in a first direction along the main surface of the semiconductor substrate and are spaced apart from each other in a second direction orthogonal to the first direction along the main surface of the semiconductor substrate, and depositing a third insulating film over the main surface of the semiconductor substrate such that the third insulating film is embedded in the trenches.
Shibun Tsuda
Filed: 8 Jan 19
Utility
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18 Nov 19
To provide a semiconductor device capable of having an ONO-film-configuring second oxide film with an optimized thickness.
Yoshiyuki Kawashima, Atsushi Yoshitomi
Filed: 26 Jun 18
Utility
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18 Nov 19
A semiconductor device according to one embodiment includes a semiconductor substrate having a first surface, an insulating isolation film disposed at the first surface, and a gate electrode.
Takahiro Mori
Filed: 17 Dec 17
Utility
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18 Nov 19
The present invention provides a semiconductor device capable of properly performing equalization even when the transfer rate of serial data is changed.
Kazuto Kanomata
Filed: 11 Sep 17
Utility
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13 Nov 19
A semiconductor device including a digital circuit, a first ground potential line provided corresponding to the digital circuit, an analog circuit, a second ground potential line respectively provided corresponding to the analog circuit, and a bidirectional diode group provided between the first ground potential line and the second ground potential line.
Yasuyuki MORISHITA
Filed: 25 Jul 19
Utility
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13 Nov 19
A rotation angle correction device corrects a rotation angle of a converter converting a signal from a resolver attached to a motor.
Atsuhiro HIRATA
Filed: 15 Apr 19
Utility
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13 Nov 19
The phase error detection unit PHED detects the phase error PERR between the phase of the BEMF and the phase of the phase switching signal COMM (masking signal MSK) at each of a plurality of detection timings that become the zero crossing timings of the BEMF in the mechanical angular cycle.
Minoru KUROSAWA, Kichiya ITAGAKI
Filed: 30 Apr 19
Utility
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13 Nov 19
According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
Masanori IKEDA, Tadashi KAMEYAMA
Filed: 22 Jul 19
Utility
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13 Nov 19
A radar device is provided which is capable of highly accurate distance calculation by a simple method.
Yuji MOTODA
Filed: 15 Apr 19
Utility
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13 Nov 19
To provide an abnormality detection system capable of reducing work load of an engineer.
Masatoshi KAWATAKE
Filed: 24 Jul 19
Utility
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13 Nov 19
Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad.
Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
Filed: 22 Jul 19