7578 patents
Page 50 of 379
Utility
Continuous spectra transmission pyrometry
18 Jul 23
An apparatus for processing substrates includes a continuum radiation source, a source manifold optically coupled to the continuum radiation source and comprising: a plurality of beam guides, each having a first end that optically couples the beam guide to the continuum radiation source; and a second end.
Samuel C. Howells
Filed: 30 Oct 20
Utility
Vertically adjustable plasma source
18 Jul 23
The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing.
Tsutomu Tanaka, Jared Ahmad Lee, Rakesh Ramadas, Dmitry A. Dzilno, Gregory J. Wilson, Sriharish Srinivasan
Filed: 26 Dec 20
Utility
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18 Jul 23
Methods of doping a semiconductor material are disclosed.
Srinivas Gandikota, Abhijit Basu Mallick, Swaminathan Srinivasan, Rui Cheng, Susmit Singha Roy, Gaurav Thareja, Mukund Srinivasan, Sanjay Natarajan
Filed: 20 Apr 22
Utility
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18 Jul 23
An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber.
Keith Tatseun Wong, Thomas Jongwan Kwon, Sean Kang, Ellie Y. Yieh
Filed: 26 Nov 19
Utility
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18 Jul 23
An apparatus for transferring a substrate is disclosed herein.
Gee Sun Hoey, Balasubramaniam Coimbatore Jaganathan, Jagan Rangarajan
Filed: 13 Nov 20
Utility
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18 Jul 23
The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging.
Wei-Sheng Lei, Kurtis Leschkies, Roman Gouk, Giback Park, Kyuil Cho, Tapash Chakraborty, Han-Wen Chen, Steven Verhaverbeke
Filed: 18 May 21
Utility
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18 Jul 23
Exemplary methods of forming a semiconductor structure may include forming a doped silicon layer on a semiconductor substrate.
Ashish Pal, El Mehdi Bazizi, Siddarth Krishnan, Xing Chen, Lan Yu, Tyler Sherwood
Filed: 8 Feb 21
Utility
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13 Jul 23
The present disclosure relates to apparatus and methods for performing maskless lithography processes.
Ulrich MUELLER, David Arthur MARKLE, Stephen F. SPORER
Filed: 15 Jun 20
Utility
2d5fxpojt4djl11u8jllwdbip959r3kalwnt
13 Jul 23
Methods of forming an oxide layer over a semiconductor substrate are provided.
Christopher S. OLSEN, Tobin KAUFMAN-OSBORN
Filed: 16 Mar 23
Utility
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13 Jul 23
A cooling system includes a coolant source to cool down components of a processing chamber and a return line for the coolant coupled between the processing chamber and the coolant source.
Shivaram Chandrashekar, Kumaresan Nagarajan
Filed: 20 Mar 23
Utility
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13 Jul 23
Exemplary semiconductor processing methods may include forming a p-type silicon-containing material on a substrate including a first n-type silicon-containing material defining one or more features.
Amirhasan Nourbakhsh, Raman Gaire, Tyler Sherwood, Lan Yu, Roger Quon, Siddarth Krishnan
Filed: 11 Jan 22
Utility
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13 Jul 23
A method includes receiving, from sensors, sensor data associated with processing a substrate via a processing chamber of substrate processing equipment.
Rohit Mahakali, Elizabeth Kathryn Neville, Adolph Miller Allen, Xiaoxiong Yuan, Weize Hu, Karthik Ramanathan
Filed: 7 Jan 22
Utility
atjs7eojr8wjt077kbzlwuuuky30x9d027t0e2fa2ez82h74h
13 Jul 23
A method of patterning a substrate.
Kevin Anglin, Simon Ruffell
Filed: 17 Mar 23
Utility
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13 Jul 23
The subject matter of this specification can be implemented in, among other things, methods, systems, computer-readable storage medium.
Jeong Jin Hong, Sejune Cheon
Filed: 7 Jan 22
Utility
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13 Jul 23
A wafer chuck assembly includes a puck, a shaft and a base.
Toan Q. Tran, Zilu Weng, Dmitry Lubomirsky, Satoru Kobayashi, Tae Seung Cho, Soonam Park, Son M. Phi, Shankar Venkataraman
Filed: 27 Feb 23
Utility
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13 Jul 23
Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures.
Xuebin LI, Sathya CHARY, Joe MARGETIS
Filed: 12 Jan 22
Utility
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13 Jul 23
Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process.
Eswaranand VENKATASUBRAMANIAN, Yang YANG, Pramit MANNA, Kartik RAMASWAMY, Takehito KOSHIZAWA, Abhijit B. MALLICK
Filed: 9 Mar 23
Utility
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13 Jul 23
Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods.
Sean KANG, Olivier LUERE, Kenji TAKESHITA, Sanghyuk CHOI, Mengnan ZOU, Zihao DING
Filed: 10 Jan 22
Utility
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13 Jul 23
Disclosed herein is a system for profiling holes in non-opaque samples.
David Goldovsky, Ido Almog, Ronny Barnea
Filed: 12 Jan 22
Utility
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13 Jul 23
A method and apparatus for improving film growth uniformity on a semiconductor substrate.
Sathya Shrinivas CHARY, Zhiyuan YE
Filed: 11 Jan 22