2134 patents
Page 11 of 107
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
3 Aug 23
By a first ion-implantation of a p-type impurity, first and second p+-type regions for mitigating electric field of trench bottoms are formed in surface regions of an n−-type epitaxial layer that constitutes an n−-type drift region.
Masakazu BABA, Shinsuke HARADA
Filed: 23 Jan 23
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
3 Aug 23
Provided is a semiconductor device including a gate trench portion and a first trench portion adjacent to the gate trench portion.
Kaname MITSUZUKA, Tohru SHIRAKAWA
Filed: 20 Dec 22
Utility
Semiconductor device and manufacturing method
1 Aug 23
Provided is a semiconductor device comprising a semiconductor substrate, wherein the semiconductor substrate includes a hydrogen containing region including hydrogen, and the hydrogen containing region includes a high concentration region with a higher carrier concentration than a virtual carrier concentration determined based on a concentration of hydrogen included and an activation ratio of hydrogen.
Yoshiharu Kato, Toru Ajiki, Tohru Shirakawa, Misaki Takahashi, Kaname Mitsuzuka, Takashi Yoshimura, Yuichi Onozawa, Hiroshi Takishita, Soichi Yoshida
Filed: 22 Oct 20
Utility
Semiconductor Device
27 Jul 23
A semiconductor device includes a cooling base board and an insulated circuit substrate.
Tomoya HIRATA
Filed: 30 Mar 23
Utility
Semiconductor Device
27 Jul 23
A semiconductor device includes a semiconductor chip, a bonding member, and a planar laminated substrate having the semiconductor chip bonded to a front surface thereof via the bonding member.
Seiichi TAKAHASHI, Masayoshi SHIMODA, Makoto ISOZAKI
Filed: 30 Mar 23
Utility
Magnetic Field Apparatus and Linear Motor
27 Jul 23
A magnetic field apparatus includes a main magnet that generates a magnetic field with respect to an armature, a member made of a soft magnetic material and disposed adjacent to an end surface of the main magnet on a side opposing the armature, an auxiliary magnet that increases a magnetic flux of a magnetic pole of the main magnet on the side opposing the armature and disposed adjacent to the main magnet and the member in a relative moving direction between the magnetic field apparatus and the armature, and a restricting part that restricts the magnetic flux of the main magnet passing through an end surface of the member along a third direction that is perpendicular to both a first direction in which the main magnet and the armature oppose each other, and a second direction corresponding to the relative moving direction between the magnetic field apparatus and the armature.
Terukazu AKIYAMA, Satoshi IMAMORI
Filed: 22 Nov 22
Utility
Semiconductor Device and Physical Quantity Sensor Device
27 Jul 23
A semiconductor device, including: a thermistor for temperature detection; a series resistor selection circuit including a series resistor group connected in series with the thermistor, the series resistor selection circuit being configured to select a series resistor from the series resistor group according to a selection signal; an analog/digital (A/D) converter that performs A/D conversion on a divided voltage obtained by dividing an internal power supply voltage between the thermistor and the selected series resistor to generate divided voltage data, and outputs the divided voltage data; and a control circuit.
Hiroyuki NAKAJIMA
Filed: 25 Nov 22
Utility
Gate Voltage Determination Apparatus, Gate Voltage Determination Method, Gate Driving Circuit and Semiconductor Circuit
27 Jul 23
Provided is a gate voltage determination apparatus of a MOS transistor having a gate electrode, a gate insulating film and a channel region, the gate voltage determination apparatus including: a characteristic acquisition unit configured to acquire current-voltage characteristics showing a relationship between a gate current flowing through the gate electrodes and a gate voltage when the gate voltage applied to the gate electrode is changed from a higher voltage side to a lower voltage side; and a voltage determination unit configured to determine, based on a value of the gate voltage at which the gate current shows a peak waveform in the current-voltage characteristics, an off-gate voltage to be applied to the gate electrode when turning off the MOS transistor.
Naoki KUMAGAI
Filed: 17 Nov 22
Utility
Power supply device and deterioration determination method of power supply device
25 Jul 23
A power supply device includes a controller configured to output, to a power converter, a command value to control at least one of a voltage or a current of power output from the power converter, and acquire a measurement value measured by a measurement unit.
Motohiro Tsukuta
Filed: 27 Jan 21
Utility
Semiconductor device containing an oxygen concentration distribution
25 Jul 23
Provided is a semiconductor device comprising a semiconductor substrate containing oxygen.
Tomoyuki Obata
Filed: 23 Mar 21
Utility
Semiconductor device with interlayer dielectric film
25 Jul 23
Provided is a semiconductor device comprising: a semiconductor substrate; a gate trench section that is provided from an upper surface to an inside of the semiconductor substrate and extends in a predetermined extending direction on the upper surface of the semiconductor substrate; a mesa section in contact to the gate trench section in an arrangement direction orthogonal the extending direction; and an interlayer dielectric film provided above the semiconductor substrate; wherein the interlayer dielectric film is provided above at least a part of the gate trench section in the arrangement direction; a contact hole through which the mesa section is exposed is provided to the interlayer dielectric film; and a width of the contact hole in the arrangement direction is equal to or greater than a width of the mesa section in the arrangement direction.
Tatsuya Naito
Filed: 16 Jun 21
Utility
Cooler and Semiconductor Device
20 Jul 23
A cooler includes: a cooling wall including a first surface and a second surface; a first path extending in a first direction and having an inlet for a refrigerant; a second path extending in the first direction and having an outlet for the refrigerant; a cooling path causing the first path to communicate with the second path in a second direction intersecting the first direction; a partition spaced from the cooling wall in a third direction perpendicular to the first surface, separating the first and second paths from the cooling paths, and including a third surface constituting a part of a wall surface of the first path, the third surface including a first portion and a second portion differing from the first portion in position in the third direction.
Ginji UCHIBE, Yasutaka SANUKI, Yuji SUZUKI
Filed: 23 Nov 22
Utility
Cooler and Semiconductor Apparatus
20 Jul 23
A cooler includes a main body extending in the Y direction.
Yuji SUZUKI, Yasutaka SANUKI
Filed: 29 Nov 22
Utility
Semiconductor Apparatus
20 Jul 23
A semiconductor apparatus includes: a semiconductor module; a cooler including flow paths through which a refrigerant flows; a casing including a bottom surface; at least one first fixing member fixing the cooler to the bottom surface; and at least one second fixing member fixing the cooler to the bottom surface.
Ginji UCHIBE, Yasutaka SANUKI, Jun NAKAMURA
Filed: 29 Nov 22
Utility
Semiconductor Device
20 Jul 23
An outer frame (outer wall) of a housing of a semiconductor device has a spacer portion that protrudes beyond a bottom surface of a cooling bottom plate in an opposite direction to a semiconductor chip.
Reika UCHIMI
Filed: 29 Nov 22
Utility
Semiconductor Device
20 Jul 23
Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface and having a drift region of a first conductivity type; a first main terminal provided above the upper surface; a second main terminal provided below the lower surface; a control terminal configured to control whether or not to cause a current to flow between the first main terminal and the second main terminal; and a buffer region provided between the drift region and the lower surface and having a higher doping concentration than the drift region.
Norihiro KOMIYAMA, Masahiro SASAKI, Yuichi ONOZAWA, Shoji YAMADA
Filed: 22 Mar 23
Utility
Overcurrent Detection Circuit, Drive Control Device, and Power Conversion Device
20 Jul 23
An overcurrent detection circuit including a detection unit for detecting whether a current flowing between main terminals of a main switching device used by a power conversion device is an overcurrent, and a switching unit for switching among thresholds used for determining the overcurrent in the detection unit according to in which phase of the power conversion device the main switching device is used, in which the detection unit includes a plurality of comparison units for comparing a parameter according to the current flowing between main terminals, and thresholds different from each other, and the switching unit is for switching a comparison unit to use for detection of the overcurrent among the plurality of comparison units.
Kenshi TERASHIMA
Filed: 22 Mar 23
Utility
Power conversion device
18 Jul 23
A power conversion device includes a power converter, a relay, and a welding detector.
Hiroki Katsumata, Nobuhisa Ando, Shinichi Yokoyama
Filed: 31 Mar 21
Utility
Packaging structure for bipolar transistor with constricted bumps
18 Jul 23
A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate.
Ryoichi Kato, Yoshinari Ikeda, Tatsuo Nishizawa, Eiji Mochizuki
Filed: 31 Dec 20
Utility
Integrated circuit and power supply circuit
18 Jul 23
An integrated circuit for a power supply circuit that includes a transformer and a transistor controlling an inductor current flowing through a primary winding of the transformer.
Hiroki Yamane
Filed: 23 Feb 21