2134 patents
Page 14 of 107
Utility
Integrated Circuit and Power Supply Circuit
11 May 23
An integrated circuit for a power supply circuit that generates an output voltage from an input voltage.
Yuta ENDO, Jun YABUZAKI
Filed: 22 Sep 22
Utility
Integrated Circuit
11 May 23
An integrated circuit having: a signal output circuit configured to output a first digital signal of a first logic level or of a second logic level in response to an analog signal; a first buffer circuit configured to raise and lower a voltage at a terminal of the integrated circuit in response to the first digital signal of a first logic level and a second logic level, respectively; a first digital delay circuit configured to receive a clock signal, and to delay the first digital signal, to output a resultant signal as a first delay signal, based on the received clock signal; and a second buffer circuit configured to raise the voltage at the terminal in response to the first delay signal of the first logic level, and lower the voltage at the terminal in response to the first delay signal of the second logic level.
Hiroyuki NAKAJIMA
Filed: 27 Sep 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
11 May 23
A semiconductor device includes a temperature sensing unit including a plurality of temperature sensing diode portions each including an anode portion provided above a front surface of a semiconductor substrate and a cathode portion coupled to the anode portion and connected in series and a resistance portion of an N type electrically connected to the temperature sensing diode portion.
Takeyoshi NISHIMURA
Filed: 25 Sep 22
Utility
Semiconductor Apparatus
11 May 23
A semiconductor apparatus includes a first connection terminal and a second connection terminal, a drive circuit including one or more power semiconductor elements, a control circuit to control the one or more power semiconductor elements, a circuit substrate, a passive element on the circuit substrate, and a first bus bar and a second bus bar.
Kenichiro SATO
Filed: 29 Sep 22
Utility
Manufacturing Method of Semiconductor Device and Semiconductor Device
11 May 23
Provided is a manufacturing method of a semiconductor device, the manufacturing method including implanting a first dopant of a first conductivity type from an implantation surface of a semiconductor substrate into a first implantation position and implanting a second dopant of the first conductivity type from the implantation surface of the semiconductor substrate into a second implantation position having a larger distance from the implantation surface than the first implantation position after implanting the first dopant.
Norihiro KOMIYAMA, Seiji NOGUCHI, Yoshihiro IKURA, Yosuke SAKURAI, Yuichi HARADA
Filed: 24 Oct 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
11 May 23
There is provided a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; an emitter region of the first conductivity type provided above the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a base region of a second conductivity type provided between the emitter region and the drift region inside the semiconductor substrate; a first accumulation region of the first conductivity type provided between the base region and the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a plurality of trench portions provided to pass through the emitter region, the base region and first accumulation region from an upper surface of the semiconductor substrate, and provided with a conductive portion inside; and a capacitance addition portion provided below the first accumulation region to add a gate-collector capacitance thereto.
Tatsuya NAITO
Filed: 5 Jan 23
Design
Beverage making machine
9 May 23
Takayuki Tsutsui, Takuya Koyanagi
Filed: 2 Aug 21
Utility
Semiconductor device, and method of manufacturing semiconductor device
9 May 23
A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate.
Hiroki Wakimoto, Hiroshi Takishita, Takashi Yoshimura, Takahiro Tamura, Yuichi Onozawa
Filed: 4 Feb 21
Utility
Method of Manufacturing Semiconductor Device
4 May 23
Semiconductor device including first semiconductor layer of a first conductivity type, second semiconductor layer of a second conductivity type at a surface of the first semiconductor layer, third semiconductor layer of the first conductivity type selectively provided at a surface of the second layer, and gate electrode embedded in a trench via a gate insulating film.
Makoto SHIMOSAWA
Filed: 30 Dec 22
Utility
Power Conversion Device, Control Device for Power Conversion Device, and Power Conversion Control Method
4 May 23
This power conversion device includes a control unit that controls a switching operation of a switching element of the inverter unit.
Yukihiro NISHIKAWA, Masahito SHOYAMA, Koki HEBISHIMA
Filed: 27 Dec 22
Utility
Semiconductor device manufacturing method and semiconductor device
2 May 23
A semiconductor device includes a semiconductor chip, a substrate having a main surface on which the semiconductor chip is arranged, a resin case which has a storage space therein and a side wall, the side wall having an injection path extending from the storage space to a device exterior, the resin case having a first opening at a bottom side thereof, connecting the storage space to the device exterior, the substrate being disposed on the resin case, at a main surface side of the substrate facing at the bottom side of the resin case, and a sealing material filling the storage space and the injection path.
Yuji Ichimura
Filed: 29 Oct 19
Utility
Test Circuit and Testing Method
27 Apr 23
A test circuit for testing a switching device.
Mitsuru YOSHIDA
Filed: 22 Sep 22
Utility
Drive Device, Drive Method, and Power Conversion Device
27 Apr 23
According to the present disclosure, the deterioration of SiC-MOSFETs is suppressed.
Hiromu TAKUBO, Ryoga KIGUCHI
Filed: 30 Sep 22
Utility
Operation support system, operation support method, and non-transitory recording medium
25 Apr 23
There is provision of an operation support system for supporting an operation of a demand-supply system including a resource supplying facility and a resource demander facility.
Satoshi Kiryu, Yoshio Tange
Filed: 20 Jul 18
Utility
Analyzing apparatus, analysis method, and computer-readable medium
25 Apr 23
Provided is an analyzing apparatus including a charge amount analyzing unit configured to analyze, by using a device simulator configured to simulate a transient change of a charge in a semiconductor device having a first main terminal and a second main terminal, a change of a charge amount at any one of the terminals when a power source voltage applied between the first main terminal and the second main terminal is changed by a displacement voltage smaller than an initial voltage after a current flowing between the first main terminal and the second main terminal is stabilized with the semiconductor device being set to an ON state and the power source voltage being set to the initial voltage, and a capacitance calculating unit configured to compute a terminal capacitance at any one of the terminals based on the change of the charge amount analyzed by the charge amount analyzing unit.
Norihiro Komiyama, Masahiro Sasaki, Yuichi Onozawa, Shoji Yamada
Filed: 22 Mar 22
Utility
Semiconductor device having semiconductor chip formed on wiring part, and method of manufacturing the same
25 Apr 23
A semiconductor device, including a semiconductor chip having a first electrode on a rear surface thereof, a laminated substrate including a heat dissipation board laminated on a rear surface of an insulating board, and a case.
Tomoyuki Wakiyama
Filed: 23 Jun 21
Utility
Semiconductor device and semiconductor device manufacturing method
25 Apr 23
A semiconductor device, including a metal base plate having a front surface on which a disposition area is set apart from a central portion of the metal base plate, and a board placed over the disposition area with a solder therebetween.
Naoki Takizawa
Filed: 23 Oct 20
Utility
Silicon carbide semiconductor device
25 Apr 23
A silicon carbide semiconductor device includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer, a first semiconductor region, and a gate electrode.
Takumi Fujimoto
Filed: 4 May 21
Utility
Semiconductor device and method of manufacturing semiconductor device
25 Apr 23
A semiconductor device, including a first semiconductor layer of the first conductivity type formed on a semiconductor substrate, a first semiconductor region of the first conductivity type, a first base region and a first base region, both of a second conductivity type, selectively provided in the first semiconductor layer, a second semiconductor layer of the second conductivity type provided on the first semiconductor layer, a second semiconductor region of the first conductivity type selectively provided in the second semiconductor layer, a trench penetrating the second semiconductor layer and the second semiconductor region, a gate electrode provided in the trench, an interlayer insulating film provided on the gate electrode, a second base region in contact with a bottom of the trench, a first electrode in contact with the second semiconductor layer and the second semiconductor region, and a second electrode provided on the back of the semiconductor substrate.
Keiji Okumura
Filed: 18 Jan 22
Utility
Semiconductor Device and Method of Manufacturing the Same
20 Apr 23
A bus bar includes a laminated body formed by directly laminating a flat plate-shaped first conductive plate, flat plate-shaped insulating sheet, and flat plate-shaped second conductive plate.
Hiroto WATANABE, Sho TAKANO
Filed: 29 Sep 22