2134 patents
Page 12 of 107
Utility
Switching control circuit and LLC converter
18 Jul 23
A switching control circuit for controlling an LLC converter that includes a first switching device, a first free-wheeling diode connected in parallel with the first switching device, a second switching device connected in series with the first switching device and the first free-wheeling diode, and a second free-wheeling diode connected in parallel with the second switching device.
Ryuunosuke Araumi, Ryuji Yamada
Filed: 25 Mar 21
Utility
Integrated circuit and power supply circuit
18 Jul 23
An integrated circuit for a power supply circuit configured to generate an output voltage at a target level.
Tsuyoshi Yoshizawa
Filed: 23 Jun 21
Utility
Control device, consideration calculation device, power system, and computer-readable medium having recorded thereon a program
18 Jul 23
In order to output sufficient reactive power for voltage stabilization of a utility grid, and calculate an appropriate consideration according to an amount of the output reactive power, is provided a control device for controlling a distributed power source connected to the utility grid, comprising: a range setting unit where an allowable range of reactive and active powers output at normal times is set; an output control unit for controlling the reactive and active powers supplied from the distributed power source to the utility grid within the allowable range set in the range setting unit; and a reception unit for receiving, from a command device in the utility grid, an excess output command indicating that the reactive power exceeding the allowable range should be output, wherein the output control unit is for outputting the reactive power out of the allowable range when the reception unit receives the excess output command.
Takayuki Nagakura, Songhao Yin
Filed: 30 Oct 20
Utility
Short circuit protection apparatus for power conversion apparatus
18 Jul 23
A short circuit protection apparatus for a power conversion apparatus supplying power to a load via a plurality of switches connected to each other in parallel includes Ma current detectors each configured to detect a sum of currents flowing through two or more switches among the plurality of switches so as to output a detection signal indicative of the sum that is detected, wherein Ma is 1 less than M, which is the number of the plurality of switches, and a short circuit determiner configured to determine, based on detection signals obtained from the respective Ma current detectors, occurrence of short circuit failure in the plurality of switches to output a cutoff instruction signal for stopping on-off drive of the plurality of switches.
Yasunao Saga
Filed: 31 Jan 22
Utility
Semiconductor Device
13 Jul 23
A semiconductor device includes: a lower electrode; a first dielectric layer provided on the lower electrode; a first upper electrode provided on the first dielectric layer; a second dielectric layer provided on the first upper electrode; a second upper electrode provided on the second dielectric layer and electrically connected to the lower electrode; a third dielectric layer provided on the second upper electrode; and a third upper electrode provided on the third dielectric layer and electrically connected to the first upper electrode, wherein a first capacitor between the lower electrode and the first upper electrode, a second capacitor between the first upper electrode and the second upper electrode, and a third capacitor between the second upper electrode and the third upper electrode are connected in parallel with each other.
Masaharu YAMAJI
Filed: 1 Dec 22
Utility
Semiconductor Apparatus and Vehicle
13 Jul 23
A semiconductor apparatus a semiconductor module including a semiconductor device and a resin section covering the periphery of the semiconductor device, and a cooler arranged below the semiconductor device.
Daiki YOSHIDA, Nobuhiro HIGASHI, Tsubasa NAKAMURA
Filed: 25 Nov 22
Utility
Semiconductor Device and Semiconductor Module
13 Jul 23
Provided is a semiconductor device including: a transistor portion provided in a semiconductor substrate; and a diode portion provided in the semiconductor substrate, in which an area ratio of the transistor portion to the diode portion on a front surface of the semiconductor substrate is larger than 3.1 and smaller than 4.7.
Hayato NAKANO
Filed: 22 Mar 23
Utility
Silicon Carbide Semiconductor Device
13 Jul 23
A silicon carbide semiconductor device includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer, a first semiconductor region, and a gate electrode.
Takumi FUJIMOTO
Filed: 13 Mar 23
Utility
Silicon Carbide Semiconductor Device
13 Jul 23
A silicon carbide semiconductor device has a termination region, which includes first to fourth semiconductor regions, one provided on the outer side of another.
Shingo HAYASHI
Filed: 30 Nov 22
Utility
Semiconductor device
11 Jul 23
Provided is a semiconductor device including: a drift region of first conductivity type provided in a semiconductor substrate; a base region of second conductivity type provided in the semiconductor substrate; an emitter region of first conductivity type provided at a front surface of the semiconductor substrate; a contact region of second conductivity type provided on the base region and having a higher doping concentration than the base region; a contact trench portion provided at the front surface of the semiconductor substrate; a first barrier layer provided at a side wall and a bottom surface of the contact trench portion; and a second barrier layer provided in contact with the contact region at the side wall of the contact trench portion.
Makoto Shimosawa, Takeyoshi Nishimura
Filed: 25 May 21
Utility
Semiconductor device and method of manufacturing the same
11 Jul 23
A semiconductor device includes: a semiconductor layer of a first conductivity-type; a well region of a second conductivity-type provided at an upper part of the semiconductor layer; a base region of the second conductivity-type provided at an upper part of the well region; a carrier supply region of the first conductivity-type provided at an upper part of the base region; a drift region of the first conductivity-type provided separately from the base region; a carrier reception region of the first conductivity-type provided at an upper part of the drift region; a gate electrode provided on a top surface of the well region interposed between the base region and the drift region via a gate insulating film; and a punch-through prevention region of the second conductivity-type provided at the upper part of the well region and having an impurity concentration different from the impurity concentration of the base region.
Kazumi Takagiwa, Hitoshi Sumida
Filed: 31 Jan 22
Utility
Semiconductor Device
6 Jul 23
A cooling device including a rectangular top plate in a plan view having a front surface on which a semiconductor module is disposed and a rear surface having a sidewall connection region, a flow pass region, and an outer edge region.
Takahiro KOYAMA, Daiki YOSHIDA, Yuichiro HINATA, Takafumi YAMADA, Yoshihiro TATEISHI
Filed: 15 Mar 23
Utility
Silicon carbide semiconductor device and silicon carbide semiconductor circuit device
4 Jul 23
In a silicon carbide semiconductor device and a silicon carbide semiconductor circuit device equipped with the silicon carbide semiconductor device, a gate leak current that flows when negative voltage with respect to the potential of a source electrode is applied to the gate electrode is limited to less than 2×10−11 A and the gate leak current is limited to less than 3.7×10−6 A/m2.
Keiji Okumura, Akimasa Kinoshita
Filed: 1 Oct 20
Utility
Uninterruptible power supply
4 Jul 23
An uninterruptible power supply includes a plurality of uninterruptible power supply modules each including a power converter, an input/output module that outputs power converted by the power converter to an outside of the uninterruptible power supply, and a disconnection module including a housing that houses disconnection switches that electrically disconnect each of the plurality of uninterruptible power supply modules individually.
Tomo Kurozaki, Seiitsu Kin
Filed: 13 Jul 20
Utility
Method of inspecting silicon carbide semiconductor device
4 Jul 23
A body diode is energized by inputting a BD energization pulse signal having a predetermined cycle.
Makoto Utsumi, Masaki Miyazato
Filed: 30 Nov 21
Utility
Method for Selecting Scale-dissolving Agent
29 Jun 23
A method provides for selecting a scale-dissolving agent suitable for components of the scale.
Taichiro Kato, Kuniyuki Takahashi, Shinya Ui, Hideki Yamamoto
Filed: 23 Feb 23
Utility
Manufacturing Method for Semiconductor Device
29 Jun 23
A semiconductor device manufacturing method, including: a first treatment process for reducing an amount of oxygen and carbon adsorbed to a main surface of the conductive plate to 20 atomic % or less; a first checking process for checking whether the conductive plate has a temperature no higher than a reference temperature; a chip placement process for placing, responsive to the conductive plate having the temperature no higher than the reference temperature, a semiconductor chip on the main surface of the conductive plate via a sinter material; a first bonding process for applying heat and pressure to the sinter material according to a first condition that allows the organic substance to partially remain; a preparatory process for making preparations for further bonding the semiconductor chip; and a second bonding process for further applying heat and pressure to the sinter material according to a second condition that sinters the sinter material.
Tsunehiro NAKAJIMA
Filed: 27 Oct 22
Utility
Semiconductor Resistance Device
29 Jun 23
A semiconductor resistance device includes a polysilicon resistance region; a first contact region in the resistance region, the first contact region having the same conductivity type as the resistance region and having a higher impurity concentration than the resistance region; a first wiring electrically connected to one end of the resistance region via a plurality of first vias; and a second wiring electrically connected to the other end of the resistance region via a plurality of second vias.
Yoshiaki TOYODA
Filed: 1 Nov 22
Utility
Semiconductor Device and Method of Manufacturing the Same
29 Jun 23
Provided is a semiconductor device including: a drift region of a first conductivity type provided in a semiconductor substrate; a base region of a second conductivity type provided above the drift region; an emitter region of a first conductivity type provided above the base region; a second conductivity type region provided above the drift region; a plurality of trench portions extending in a predetermined extending direction; and an interlayer dielectric film provided above the semiconductor substrate and includes a first contact hole portion and second contact hole portion, in which the second conductivity type region and the emitter region are provided alternately in the extending direction, the first contact hole portion is provided alternately with the second contact hole portion in the extending direction, and a lower end of the first contact hole portion is provided at a different depth from a lower end of the second contact hole portion.
Motoyoshi KUBOUCHI, Makoto SHIMOSAWA, Makoto ENDOU
Filed: 23 Dec 22
Utility
Silicon Carbide Semiconductor Device
29 Jun 23
A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an insulating film, first electrodes, a second electrode, and trenches.
Hiroyuki FUJISAWA, Akimasa KINOSHITA
Filed: 17 Feb 23