2134 patents
Page 12 of 107
Utility
Integrated circuit and power supply circuit
18 Jul 23
An integrated circuit for a power supply circuit that includes a transformer and a transistor controlling an inductor current flowing through a primary winding of the transformer.
Hiroki Yamane
Filed: 23 Feb 21
Utility
Short circuit protection apparatus for power conversion apparatus
18 Jul 23
A short circuit protection apparatus for a power conversion apparatus supplying power to a load via a plurality of switches connected to each other in parallel includes Ma current detectors each configured to detect a sum of currents flowing through two or more switches among the plurality of switches so as to output a detection signal indicative of the sum that is detected, wherein Ma is 1 less than M, which is the number of the plurality of switches, and a short circuit determiner configured to determine, based on detection signals obtained from the respective Ma current detectors, occurrence of short circuit failure in the plurality of switches to output a cutoff instruction signal for stopping on-off drive of the plurality of switches.
Yasunao Saga
Filed: 31 Jan 22
Utility
Switching control circuit and LLC converter
18 Jul 23
A switching control circuit for controlling an LLC converter that includes a first switching device, a first free-wheeling diode connected in parallel with the first switching device, a second switching device connected in series with the first switching device and the first free-wheeling diode, and a second free-wheeling diode connected in parallel with the second switching device.
Ryuunosuke Araumi, Ryuji Yamada
Filed: 25 Mar 21
Utility
Integrated circuit and power supply circuit
18 Jul 23
An integrated circuit for a power supply circuit configured to generate an output voltage at a target level.
Tsuyoshi Yoshizawa
Filed: 23 Jun 21
Utility
Semiconductor Apparatus and Vehicle
13 Jul 23
A semiconductor apparatus a semiconductor module including a semiconductor device and a resin section covering the periphery of the semiconductor device, and a cooler arranged below the semiconductor device.
Daiki YOSHIDA, Nobuhiro HIGASHI, Tsubasa NAKAMURA
Filed: 25 Nov 22
Utility
Semiconductor Device
13 Jul 23
A semiconductor device includes: a lower electrode; a first dielectric layer provided on the lower electrode; a first upper electrode provided on the first dielectric layer; a second dielectric layer provided on the first upper electrode; a second upper electrode provided on the second dielectric layer and electrically connected to the lower electrode; a third dielectric layer provided on the second upper electrode; and a third upper electrode provided on the third dielectric layer and electrically connected to the first upper electrode, wherein a first capacitor between the lower electrode and the first upper electrode, a second capacitor between the first upper electrode and the second upper electrode, and a third capacitor between the second upper electrode and the third upper electrode are connected in parallel with each other.
Masaharu YAMAJI
Filed: 1 Dec 22
Utility
Semiconductor Device and Semiconductor Module
13 Jul 23
Provided is a semiconductor device including: a transistor portion provided in a semiconductor substrate; and a diode portion provided in the semiconductor substrate, in which an area ratio of the transistor portion to the diode portion on a front surface of the semiconductor substrate is larger than 3.1 and smaller than 4.7.
Hayato NAKANO
Filed: 22 Mar 23
Utility
Silicon Carbide Semiconductor Device
13 Jul 23
A silicon carbide semiconductor device includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer, a first semiconductor region, and a gate electrode.
Takumi FUJIMOTO
Filed: 13 Mar 23
Utility
Silicon Carbide Semiconductor Device
13 Jul 23
A silicon carbide semiconductor device has a termination region, which includes first to fourth semiconductor regions, one provided on the outer side of another.
Shingo HAYASHI
Filed: 30 Nov 22
Utility
Semiconductor device
11 Jul 23
Provided is a semiconductor device including: a drift region of first conductivity type provided in a semiconductor substrate; a base region of second conductivity type provided in the semiconductor substrate; an emitter region of first conductivity type provided at a front surface of the semiconductor substrate; a contact region of second conductivity type provided on the base region and having a higher doping concentration than the base region; a contact trench portion provided at the front surface of the semiconductor substrate; a first barrier layer provided at a side wall and a bottom surface of the contact trench portion; and a second barrier layer provided in contact with the contact region at the side wall of the contact trench portion.
Makoto Shimosawa, Takeyoshi Nishimura
Filed: 25 May 21
Utility
Semiconductor device and method of manufacturing the same
11 Jul 23
A semiconductor device includes: a semiconductor layer of a first conductivity-type; a well region of a second conductivity-type provided at an upper part of the semiconductor layer; a base region of the second conductivity-type provided at an upper part of the well region; a carrier supply region of the first conductivity-type provided at an upper part of the base region; a drift region of the first conductivity-type provided separately from the base region; a carrier reception region of the first conductivity-type provided at an upper part of the drift region; a gate electrode provided on a top surface of the well region interposed between the base region and the drift region via a gate insulating film; and a punch-through prevention region of the second conductivity-type provided at the upper part of the well region and having an impurity concentration different from the impurity concentration of the base region.
Kazumi Takagiwa, Hitoshi Sumida
Filed: 31 Jan 22
Utility
Semiconductor Device
6 Jul 23
A cooling device including a rectangular top plate in a plan view having a front surface on which a semiconductor module is disposed and a rear surface having a sidewall connection region, a flow pass region, and an outer edge region.
Takahiro KOYAMA, Daiki YOSHIDA, Yuichiro HINATA, Takafumi YAMADA, Yoshihiro TATEISHI
Filed: 15 Mar 23
Utility
Silicon carbide semiconductor device and silicon carbide semiconductor circuit device
4 Jul 23
In a silicon carbide semiconductor device and a silicon carbide semiconductor circuit device equipped with the silicon carbide semiconductor device, a gate leak current that flows when negative voltage with respect to the potential of a source electrode is applied to the gate electrode is limited to less than 2×10−11 A and the gate leak current is limited to less than 3.7×10−6 A/m2.
Keiji Okumura, Akimasa Kinoshita
Filed: 1 Oct 20
Utility
Uninterruptible power supply
4 Jul 23
An uninterruptible power supply includes a plurality of uninterruptible power supply modules each including a power converter, an input/output module that outputs power converted by the power converter to an outside of the uninterruptible power supply, and a disconnection module including a housing that houses disconnection switches that electrically disconnect each of the plurality of uninterruptible power supply modules individually.
Tomo Kurozaki, Seiitsu Kin
Filed: 13 Jul 20
Utility
Method of inspecting silicon carbide semiconductor device
4 Jul 23
A body diode is energized by inputting a BD energization pulse signal having a predetermined cycle.
Makoto Utsumi, Masaki Miyazato
Filed: 30 Nov 21
Utility
Method for Selecting Scale-dissolving Agent
29 Jun 23
A method provides for selecting a scale-dissolving agent suitable for components of the scale.
Taichiro Kato, Kuniyuki Takahashi, Shinya Ui, Hideki Yamamoto
Filed: 23 Feb 23
Utility
Semiconductor Resistance Device
29 Jun 23
A semiconductor resistance device includes a polysilicon resistance region; a first contact region in the resistance region, the first contact region having the same conductivity type as the resistance region and having a higher impurity concentration than the resistance region; a first wiring electrically connected to one end of the resistance region via a plurality of first vias; and a second wiring electrically connected to the other end of the resistance region via a plurality of second vias.
Yoshiaki TOYODA
Filed: 1 Nov 22
Utility
Semiconductor Device and Method for Manufacturing Same
29 Jun 23
A semiconductor device includes: a plate-shaped terminal including one main surface and another main surface and having one end electrically connected to a semiconductor chip; a nut arranged on the one main surface side at another end of the terminal; a nut cover provided on the one main surface side at the other end of the terminal and configured to cover the nut; and a case configured to surround the semiconductor chip and integrate the terminal and the nut cover, wherein the nut cover includes a protruding portion protruding from a lower portion of the nut cover to the one end side of the terminal.
Hideaki TAKAHASHI
Filed: 28 Oct 22
Utility
Semiconductor Device Manufacturing Method
29 Jun 23
To provide a manufacturing method of a semiconductor device including a semiconductor substrate, the manufacturing method of the semiconductor device including a sticking for sticking a protection tape to a first surface of the semiconductor substrate, a first grinding for supporting the protection tape and grinding a second surface of the semiconductor substrate that is a surface on the opposite side of the first surface, a protection tape cutting for supporting the second surface of the semiconductor substrate and flattening the protection tape, and a second grinding for supporting the protection tape and grinding the second surface of the semiconductor substrate.
Michiya KITANO
Filed: 27 Feb 23
Utility
Manufacturing Method for Semiconductor Device
29 Jun 23
A semiconductor device manufacturing method, including: a first treatment process for reducing an amount of oxygen and carbon adsorbed to a main surface of the conductive plate to 20 atomic % or less; a first checking process for checking whether the conductive plate has a temperature no higher than a reference temperature; a chip placement process for placing, responsive to the conductive plate having the temperature no higher than the reference temperature, a semiconductor chip on the main surface of the conductive plate via a sinter material; a first bonding process for applying heat and pressure to the sinter material according to a first condition that allows the organic substance to partially remain; a preparatory process for making preparations for further bonding the semiconductor chip; and a second bonding process for further applying heat and pressure to the sinter material according to a second condition that sinters the sinter material.
Tsunehiro NAKAJIMA
Filed: 27 Oct 22