2134 patents
Page 9 of 107
Utility
Semiconductor Device
7 Sep 23
A semiconductor device, including a semiconductor substrate, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a fourth semiconductor region, a plurality of trenches provided in the semiconductor substrate, a plurality of first electrodes respectively provided in the plurality of trenches, an interlayer insulating film, a second electrode, and a third electrode.
Yoshihiro IKURA
Filed: 26 Jan 23
Utility
Semiconductor Device
7 Sep 23
A semiconductor device including a semiconductor unit that has a first arm part, which includes: first and second semiconductor chips having first and second control electrodes on their front surfaces, a first circuit pattern where the first and second semiconductor chips are disposed, a second circuit pattern to which the first and second control electrodes are connected, and a first control wire electrically connecting the first and second control electrodes and the second circuit pattern sequentially in a direction; and a second arm part, which includes third and fourth semiconductor chips having third and fourth control electrodes on their front surfaces, a third circuit pattern where the third and fourth semiconductor chips are disposed, a fourth circuit pattern to which the third and fourth control electrodes are connected, and a second control wire electrically connecting the third and fourth control electrodes and the fourth circuit pattern sequentially in the direction.
Mitsuhiro KAKEFU, Hiroaki ICHIKAWA
Filed: 12 May 23
Utility
Semiconductor device
5 Sep 23
Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected.
Seiji Momota, Hitoshi Abe, Takashi Shiigi, Takeshi Fujii, Koh Yoshikawa, Tetsutaro Imagawa, Masaki Koyama, Makoto Asai
Filed: 7 Jan 21
Utility
Semiconductor module and method for manufacturing same
5 Sep 23
Provided are a semiconductor module in which bonding properties between an insulated substrate and a sealing resin is improved and a method for manufacturing the semiconductor module.
Yuhei Nishida, Fumihiko Momose, Takashi Ideno, Yukihiro Kitamura
Filed: 6 Feb 19
Utility
Integrated circuit
5 Sep 23
An integrated circuit having: a signal output circuit configured to output a first digital signal of a first logic level or of a second logic level in response to an analog signal; a first buffer circuit configured to raise and lower a voltage at a terminal of the integrated circuit in response to the first digital signal of a first logic level and a second logic level, respectively; a first digital delay circuit configured to receive a clock signal, and to delay the first digital signal, to output a resultant signal as a first delay signal, based on the received clock signal; and a second buffer circuit configured to raise the voltage at the terminal in response to the first delay signal of the first logic level, and lower the voltage at the terminal in response to the first delay signal of the second logic level.
Hiroyuki Nakajima
Filed: 27 Sep 22
Utility
Silicon Carbide Semiconductor Device
31 Aug 23
A semiconductor device including a semiconductor substrate, a parallel pn layer and a device structure provided in the semiconductor substrate, first and second electrodes respectively provided at two main surfaces of the semiconductor substrate, the first electrode being electrically connected to the device structure.
Syunki NARITA, Shinsuke HARADA
Filed: 17 Feb 23
Utility
Transformer and Power Converter
31 Aug 23
A transformer includes a primary winding, a feedback winding, and a non-feedback winding having substantially equal winding widths in an axial direction of a bobbin.
Hironori OSAWA, Ryo YONEMORI, Bin HE
Filed: 21 Feb 23
Utility
Semiconductor Device
31 Aug 23
A semiconductor device having a load.
Kei MINAGAWA
Filed: 28 Dec 22
Utility
Semiconductor Device, and Method of Manufacturing Semiconductor Device
31 Aug 23
A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate.
Hiroki WAKIMOTO, Hiroshi TAKISHITA, Takashi YOSHIMURA, Takahiro TAMURA, Yuichi ONOZAWA
Filed: 2 May 23
Utility
Semiconductor device and manufacturing method thereof
22 Aug 23
A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.
Yasunori Agata, Takashi Yoshimura, Hiroshi Takishita, Misaki Meguro, Naoko Kodama, Yoshihiro Ikura, Seiji Noguchi, Yuichi Harada, Yosuke Sakurai
Filed: 18 May 22
Utility
Semiconductor device
22 Aug 23
A semiconductor device, allowing easy hole extraction, including a semiconductor substrate having drift and base regions; and transistor and diode portions, in which trench portions and mesa portions are formed, is provided.
Tatsuya Naito
Filed: 14 Aug 22
Utility
Integrated circuit and power supply circuit
22 Aug 23
An integrated circuit for a power supply circuit that includes a transformer and a transistor.
Shinji Matsumoto, Hiroki Yamane
Filed: 24 Sep 21
Utility
Power converter with thermal resistance monitoring
22 Aug 23
A power converter including a control circuit configured to output a control signal, and a semiconductor module.
Haruhiko Nishio
Filed: 22 Apr 21
Utility
Filter circuit and semiconductor device
22 Aug 23
To provide a filter circuit and a semiconductor device capable of preventing circuit malfunction even when power supply voltage fluctuates.
Masashi Akahane
Filed: 22 Sep 21
Utility
Semiconductor Device
17 Aug 23
A semiconductor device includes a semiconductor module that includes: an insulating circuit board, a semiconductor chip provided on a main surface of the insulating circuit board, and an external connection terminals provided on the main surface of the insulating circuit board; an external printed circuit board provided so as to face a main surface of the semiconductor module, the external printed circuit board having a through hole into which the external connection terminal is inserted; and an elastic member provided between the main surface of the semiconductor module and the external printed circuit board so as to apply a pressing force to the main surface of the semiconductor module.
Motohito HORI, Yoshinari IKEDA, Akira HIRAO
Filed: 3 Jan 23
Utility
Semiconductor Device
17 Aug 23
A semiconductor device includes case resin having frame part defining space in which semiconductor chip is disposed and bottom part located under the frame portion; external connection terminal having external terminal partially embedded in the frame part, and internal terminal disposed on the bottom part to extend from the external terminal into the space; wire electrically connecting the semiconductor chip and the internal terminal; and sealing resin formed in the space to cover the semiconductor chip, the wire, and the internal terminal.
Daisuke INOUE
Filed: 27 Dec 22
Utility
Processing Circuit
17 Aug 23
Provided is a processing circuit for data of multiple bits including a first bit, a second bit, and a third bit, the processing circuit including a memory unit for storing a bit value of each bit, a first memory code, and a second memory code, a code generation unit for generating a first generation code indicating whether bit values of the first bit and the second bit stored by the memory unit are identical, and a second generation code indicating whether bit values of the second bit stored and the third bit stored by the memory unit are identical, and a determination unit for determining whether, based on a comparison result of between the first memory code and the first generation code and a comparison result between the second memory code and the second generation code, an error has occurred in the bit value of the second bit.
Kazuhiro MATSUNAMI
Filed: 20 Dec 22
Utility
Semiconductor Apparatus and Vehicle
17 Aug 23
A semiconductor apparatus includes a substrate, a semiconductor device arranged on an upper surface of the substrate, a lead frame bonded to an upper surface of the semiconductor device via a bonding material, the lead frame having a first recess on an upper surface thereof, a wire connected to the first recess, and a resin that seals the substrate, the semiconductor device, the lead frame, and the wire.
Hitoshi NAKATA, Yuichiro HINATA, Naoyuki KANAI
Filed: 28 Dec 22
Utility
Semiconductor Device
17 Aug 23
Provided is a semiconductor device in which one mesa portion of two mesa portions in contact with a gate trench portion is an active mesa portion in which an emitter region of a first conductivity type having a doping concentration higher than that of a drift region is arranged in contact with the gate trench portion, the other mesa portion of two mesa portions in contact with the gate trench portion is a dummy mesa portion having no emitter region, and a dummy contact resistance which is a resistance of the dummy mesa portion and an emitter electrode is 1000 times or more as high as an active contact resistance which is a resistance of the active mesa portion and the emitter electrode.
Yosuke SAKURAI, Akio YAMANO, Seiji NOGUCHI, Ryutaro HAMASAKI, Takuya YAMADA, Daisuke OZAKI
Filed: 20 Dec 22
Utility
Semiconductor Device and Method of Manufacturing the Same
17 Aug 23
A semiconductor device includes: a semiconductor substrate; a plurality of trenches provided on a top surface side of the semiconductor substrate; am insulated gate electrode structure buried inside the respective trenches; an interlayer insulating film deposited on top surfaces of the semiconductor substrate and the insulated gate electrode structure; and a silicide layer deposited at a bottom of a contact hole penetrating the interlayer insulating film so as to be in contact with the top surface of the semiconductor substrate interposed between the trenches adjacent to each other, wherein at least a part of a bottom surface of the silicide layer is located at a higher position than a bottom surface of the interlayer insulating film.
Motoyoshi KUBOUCHI
Filed: 27 Dec 22