2134 patents
Page 7 of 107
Utility
Semiconductor Module and Method for Manufacturing the Same
12 Oct 23
A semiconductor module includes: a semiconductor chip including a main electrode; a connection conductor electrically connected to the main electrode; a housing portion surrounding the semiconductor chip and at least a part of the connection conductor; a sealing material filled in a space surrounded by the housing portion; and a connection unit fixed to the housing portion.
Tadahiko SATO
Filed: 25 May 23
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
12 Oct 23
A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type1, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, trenches, gate insulating films, gate electrodes, a first electrode, and a second electrode.
Keishirou KUMADA
Filed: 28 Feb 23
Utility
Driving Apparatus and Driving Method
12 Oct 23
Provided is a driving apparatus including a temperature detection circuit configured to output a temperature detection signal corresponding to a temperature of a switching device, a current detection circuit configured to sample, at a timing during an ON period of the switching device, a current detection signal corresponding to a current that flows in the switching device, and a driving circuit configured to adjust, according to the temperature detection signal and the current detection signal, a driving current to be supplied to a control terminal of the switching device.
Masashi AKAHANE
Filed: 21 Feb 23
Utility
Permanent field magnet, manufacturing method, and linear motor
10 Oct 23
A permanent field magnet is disposed between two armatures parallel to each other, and includes a first field magnet section facing a first armature of the two armatures, and a second field magnet section facing a second armature of the two armatures that is different from the first armature.
Yusuke Konno, Satoshi Imamori
Filed: 22 Jun 21
Utility
Comparator circuit and semiconductor device
10 Oct 23
A comparator circuit configured to output an output voltage at a first logic level, upon an input voltage exceeding a first threshold voltage, and output the output voltage at a second logic level, upon the input voltage dropping below a second threshold voltage lower than the first threshold voltage.
Masashi Akahane
Filed: 24 Nov 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
5 Oct 23
In an active region, a first parallel pn layer is provided in which a plurality of first first-conductivity-type regions and a plurality of first second-conductivity-type regions are disposed so as to repeatedly alternate with one another; in a termination region, a second parallel pn layer is provided in which a plurality of second first-conductivity-type regions and a plurality of second second-conductivity-type regions are disposed so as to repeatedly alternate one another; in the termination region, a first semiconductor region of a second conductivity type, is selectively provided between a first main surface of a semiconductor substrate and the second parallel pn layer, the first semiconductor region configuring a voltage withstanding structure and surrounding a periphery of the active region.
Masakazu BABA, Shinsuke HARADA
Filed: 28 Feb 23
Utility
Semiconductor Device and Semiconductor Module
5 Oct 23
A semiconductor device, including: a front-surface-side metal layer provided above a semiconductor substrate; a plated layer provided on an upper surface of the front-surface-side metal layer; a barrier layer which is provided on the upper surface of the front-surface-side metal layer, and provided being in direct contact with the plated layer on the upper surface of the front-surface-side metal layer; and an insulation protecting layer provided on the barrier layer, is provided.
Masahide GOTOH
Filed: 22 Feb 23
Utility
Semiconductor Device and Method of Manufacturing Semiconductor Device
5 Oct 23
Provided is a semiconductor device including a MOS gate structure provided in a semiconductor substrate, including: an interlayer dielectric film which includes a contact hole and is provided above the semiconductor substrate; a conductive first barrier metal layer provided on side walls of the interlayer dielectric film in the contact hole; a conductive second barrier metal layer stacked on the first barrier metal layer in the contact hole; and a silicide layer provided on an upper surface of the semiconductor substrate below the contact hole, in which the first barrier metal layer is more dense than the second barrier metal layer, and a film thickness thereof is 1 nm or more and 10 nm or less.
Takashi YOSHIMURA, Makoto SHIMOSAWA, Motoyoshi KUBOUCHI, Misaki UCHIDA
Filed: 22 Feb 23
Utility
Armature, linear motor, method of manufacturing armature
3 Oct 23
An armature includes a plurality of cores arranged in a straight line and discontinuous with each other, a plurality of coils wound around each of the cores, and a holding section configured to hold the cores.
Satoshi Imamori, Terukazu Akiyama
Filed: 24 Jan 22
Utility
Semiconductor device and semiconductor module
3 Oct 23
Provided is a semiconductor device including: a semiconductor substrate; an active portion provided on the semiconductor substrate; a first well region and a second well region arranged sandwiching the active portion in a top view, provided on the semiconductor substrate; an emitter electrode arranged above the active portion; and a pad arranged above the first well region, away from the emitter electrode, wherein the emitter electrode is provided above the second well region.
Atsushi Shoji, Soichi Yoshida
Filed: 26 Jan 21
Utility
Semiconductor Device and Method of Manufacturing the Same
28 Sep 23
A method of manufacturing a semiconductor device, includes; preparing an insulated circuit substrate including a circuit layer having a main surface and a side surface inclined to a normal direction of the main surface; irradiating the side surface of the circuit layer with a laser beam so as to roughen at least a part of the side surface of the circuit layer and provide an oxide film on the roughened side surface of the circuit layer; and bonding a semiconductor chip to the main surface of the circuit layer via a solder layer.
Yasuaki HOZUMI, Fumihiko MOMOSE, Natsuki TAKEISHI, Ryoto UCHIYAMA
Filed: 27 Jan 23
Utility
Semiconductor Device
28 Sep 23
Provided is a semiconductor device comprising a semiconductor substrate that includes a transistor region; an emitter electrode that is provided on the semiconductor substrate; a first dummy trench portion that is provided on the transistor region of the semiconductor substrate and includes a dummy conducting portion that is electrically connected to the emitter electrode; and a first contact portion that is a partial region of the transistor region, provided between an end portion of a long portion of the first dummy trench portion and an end portion of the semiconductor substrate, and electrically connects the emitter electrode and a semiconductor region with a first conductivity type provided in the transistor region.
Yuichi HARADA
Filed: 11 Apr 23
Utility
Manufucturing Method of Packaging Structure for Bipolar Transistor with Constricted Bumps
28 Sep 23
A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate.
Ryoichi KATO, Yoshinari IKEDA, Tatsuo NISHIZAWA, Eiji MOCHIZUKI
Filed: 18 May 23
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
28 Sep 23
Provided is a semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a buffer region of the first conductivity type which is provided in a back surface side of the semiconductor substrate relative to the drift region and which includes a first peak of a doping concentration and a second peak of the doping concentration which is provided in a front surface side of the semiconductor substrate relative to the first peak, and a first lifetime control region provided between the first peak and the second peak in a depth direction of the semiconductor substrate.
Noriaki YAO, Yoshihisa SUZUKI, Hiroshi TAKISHITA
Filed: 21 May 23
Utility
Semiconductor Apparatus
28 Sep 23
A first conductive pattern includes a first input region overlapping a first semiconductor device and a second input region overlapping a second semiconductor device.
Akio YAMANO
Filed: 30 May 23
Utility
Drive Circuit of Switching Element and Intelligent Power Module
21 Sep 23
There is provided a drive circuit of a switching element and an intelligent power module both capable of preventing deterioration of a switching loss of the switching element.
Masanari FUJII
Filed: 27 Jan 23
Utility
Wiring Structure, Semiconductor Module, and Vehicle
21 Sep 23
A conductive member constituting a wiring structure includes a first bonding section bonded to an electronic component, a second bonding section bonded to a connection target for the electronic component, and a raised section that protrudes upward from the first bonding section and is connected to the second bonding section.
Hitoshi NAKATA, Naoyuki KANAI, Yuichiro HINATA
Filed: 30 Jan 23
Utility
Semiconductor Device
21 Sep 23
There is provided a semiconductor device that includes a transistor portion and a diode portion, the semiconductor device including a drift region, a base region, an emitter region, and a plurality of trench portions, in which the transistor portion has a boundary region provided to be adjacent to the diode portion, a lifetime control region is provided from the diode portion, across the boundary region, to the transistor portion provided with the emitter region, in an array direction of the plurality of trench portions, the boundary region has a plug region of a second conductivity type which is provided to extend in an extension direction of the plurality of trench portions and which has a doping concentration higher than that of the base region, and a contact region and the base region are alternately arranged in the extension direction, at a front surface in the boundary region.
Soichi YOSHIDA
Filed: 21 May 23
Utility
Semiconductor Device
21 Sep 23
A semiconductor device, including first and second conductive patterns, a plurality of first semiconductor chips each having a switching device, a plurality of second semiconductor chips each having a diode device, a plurality of first wires, respectively coupling low-potential electrodes of the switching devices and the second conductive pattern, and a plurality of second wires, respectively coupling anode electrodes of the diode devices and the second conductive pattern.
Hongfei LU
Filed: 22 May 23
Utility
Switching Control Circuit and Power Supply Circuit
21 Sep 23
A switching control circuit for a power supply circuit that includes an inductor configured to receive a rectified voltage corresponding to an alternating current (AC) voltage, and a transistor configured to control a current flowing through the inductor, the power supply circuit generating an output voltage from the AC voltage, the switching control circuit being configured to switch the transistor.
Ryuunosuke ARAUMI, Ryuji YAMADA
Filed: 24 Feb 23