2134 patents
Page 6 of 107
Utility
Power Conversion Device
26 Oct 23
A power conversion device includes a power converter and a housing to be attached to a motor and to house the power converter.
Toshiaki AZUMA
Filed: 10 Apr 23
Utility
Semiconductor Module
26 Oct 23
A semiconductor module includes a mounting substrate, a transistor mounted on the mounting substrate, a housing configured to house a semiconductor element, a first sealing layer filled in a space inside the housing to seal the transistor, a second sealing layer of a resin material softer than the first sealing layer and layered on the first sealing layer, and a wire electrically connected to the transistor, in which the wire includes a first portion covered with the first sealing layer and a second portion covered with the second sealing layer.
Nobuharu KUSAKARI
Filed: 22 Feb 23
Utility
Semiconductor Device
26 Oct 23
A wire protecting part partially encloses a first lead frame and a second lead frame and has an enclosing surface from which the first and second lead frames protrude.
Rikihiro MARUYAMA, Yoshinori ODA, Takahito HARADA
Filed: 30 Mar 23
Utility
Semiconductor Unit
26 Oct 23
A laminated wiring has a first conductor which connects first terminals of one or more capacitors and each positive terminal of a plurality of semiconductor modules, a second conductor which connects second terminals of the one or more capacitors and each negative terminal of the plurality of semiconductor modules, and an insulator.
Seiki IGARASHI
Filed: 24 Mar 23
Utility
Insulated-gate semiconductor device and method of manufacturing the same
24 Oct 23
An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.
Keiji Okumura
Filed: 17 Jan 23
Utility
Semiconductor Apparatus
19 Oct 23
A semiconductor apparatus includes: a base, an insulating substrate arranged on the base, a semiconductor element arranged on the insulating substrate, a case joined to the base and housing the semiconductor element, and a sealing material supplied in the case.
Tadahiko SATO
Filed: 24 Feb 23
Utility
Semiconductor Device
19 Oct 23
Provided is a semiconductor device including a bonding layer made from sintered material and having a configuration capable of avoiding a variation in life span.
Takashi SAITO
Filed: 26 Jun 23
Utility
Semiconductor Module
19 Oct 23
A semiconductor module includes a laminate substrate including an insulating plate and first and second circuit boards on an upper surface of the insulating plate, the first semiconductor device on an upper surface of the first circuit board, a first main terminal, and a first metal wiring board that electrically connects the first semiconductor device to the first main terminal.
Tadahiko SATO
Filed: 28 Feb 23
Utility
Semiconductor Device and Manufacturing Method
19 Oct 23
A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction.
Yoshiharu KATO, Toru AJIKI, Tohru SHIRAKAWA, Misaki TAKAHASHI, Kaname MITSUZUKA, Takashi YOSHIMURA, Yuichi ONOZAWA, Hiroshi TAKISHITA, Soichi YOSHIDA
Filed: 13 Jun 23
Utility
Semiconductor Device, Ips Having Temperature Dependency Correction Function, and Inverter Device
19 Oct 23
A semiconductor device, including: a semiconductor element configured to generate an output current that varies with a change in a temperature of the semiconductor element; a temperature detection circuit that detects the temperature and outputs a temperature detection signal based on the detected temperature; and a correction circuit that causes the output current of the semiconductor element to change based on the temperature detection signal.
Daisuke ISOBE
Filed: 30 Mar 23
Utility
Control Device, and Switching Device
19 Oct 23
A control apparatus is provided, comprising a protecting unit configured to perform, in response to short circuit occurring in a main switching device, protection operation to restrict current flowing through the main switching device, and a protection operation control unit configured to cause the protecting unit to continue the protection operation until power supply to a driving control unit for performing drive control of the main switching device according to a drive signal stops, wherein the protection operation control unit has a first retaining unit configured to retain information indicating that the protection operation is to be performed until a first cancellation condition is satisfied including that the short circuit has been eliminated and that the power supply has stopped, when the short circuit has occurred.
Naoki SHIMIZU
Filed: 19 Jun 23
Utility
Semiconductor Device
19 Oct 23
A semiconductor device includes: a baseplate; an insulating substrate on the baseplate; a semiconductor element on the insulating substrate; a case bonded to the baseplate by an adhesive, the case surrounding a space in which the semiconductor element is positioned; and an encapsulating material filling the space surrounded by the case, in which, the case includes a claw, the claw includes: a protrusion protruding from an inner wall surface of the case; and a hook inclined from the protrusion, a space being sandwiched between the hook and the inner wall surface of the case.
Taisuke FUKUDA
Filed: 22 Feb 23
Utility
Semiconductor Device and Semiconductor Device Manufacturing Method
19 Oct 23
A semiconductor device, including a cooling body, a semiconductor unit including a wiring portion electrically connected to a semiconductor chip, and a sealing member sealing the entire semiconductor unit over a cooling surface of the cooling body.
Takafumi YAMADA
Filed: 29 Mar 23
Utility
Integrated Circuit and Power Supply Circuit
19 Oct 23
An integrated circuit for a power supply circuit that generates an output voltage from an alternating current (AC) voltage, the power supply circuit including a transistor configured to control a current flowing through an inductor.
Takato SUGAWARA
Filed: 24 Feb 23
Utility
Semiconductor Device
19 Oct 23
A semiconductor device includes: a plurality of trench portions provided in a semiconductor substrate; a mesa portion provided between the plurality of trench portions in the semiconductor substrate; and a front surface metal layer provided above the semiconductor substrate, wherein each of the plurality of trench portions has: a gate trench portion including a gate conductive portion and a gate dielectric film; and a dummy trench portion including a dummy conductive portion and a dummy dielectric film, and the front surface metal layer has: an upper region in contact with an upper surface of the mesa portion in direct contact with the dummy trench portion; and an embedded region that is embedded in the semiconductor substrate and is in contact with a side wall of the mesa portion and the dummy conductive portion.
Naoki MITAMURA
Filed: 22 Feb 23
Utility
Semiconductor device
17 Oct 23
A first gate wiring layer is a 2-layered structure in which a polysilicon wiring layer and a metal wiring layer containing aluminum are sequentially stacked.
Kenichi Ishii
Filed: 28 May 21
Utility
Integrated circuit and semiconductor device
17 Oct 23
An integrated circuit for a semiconductor device that includes a first terminal for receiving a power supply voltage, a second terminal to which a load is to be coupled, and first and second metal-oxide-semiconductor (MOS) transistors each having a drain electrode and a source electrode, the source electrodes being respectively coupled to the first and second terminals.
Isao Saito
Filed: 25 Aug 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
12 Oct 23
In an active region, a first parallel pn layer in which first first-conductivity-type regions and first second-conductivity-type regions are disposed to repeatedly alternate with one another is provided while in a termination region, a second parallel pn layer in which second first-conductivity-type regions and second second-conductivity-type regions are disposed to repeatedly alternate with one another, a first semiconductor region of the second conductivity type and configuring a voltage withstanding structure, and a second semiconductor region of the second conductivity type are provided.
Masakazu BABA, Shinsuke HARADA
Filed: 28 Feb 23
Utility
Silicon Carbide Semiconductor Device
12 Oct 23
A silicon carbide semiconductor device includes a parallel pn layer that includes a standard portion and first and second portions.
Masakazu BABA, Shinsuke HARADA
Filed: 28 Feb 23
Utility
Nitride Semiconductor Device and Method for Manufacturing Nitride Semiconductor Device
12 Oct 23
An impurity region of P-type that the field effect transistor of the nitride semiconductor device includes has a peak position at which concentration of P-type impurities reaches a maximum at a position located away from an interface with a gate insulating film.
Ryo TANAKA, Shinya TAKASHIMA, Katsunori UENO
Filed: 22 Feb 23