2134 patents
Page 10 of 107
Utility
Semiconductor Device
17 Aug 23
Provided is a semiconductor device including: a buffer region having one or more doping concentration peaks having a higher doping concentration than a drift region; and a lifetime control portion provided at a position overlapping a shallowest concentration peak closest to a lower surface of a semiconductor substrate among the doping concentration peaks provided in the buffer region, and in which a carrier lifetime shows a local minimum value, in which the semiconductor substrate has a critical depth position at which an integrated value, which is obtained by integrating doping concentrations from an upper end of the drift region toward the lower surface, reaches a critical integrated concentration of the semiconductor substrate, and a depth position at which the carrier lifetime shows the local minimum value in the lifetime control portion is arranged closer to the lower surface than the critical depth position.
Yuki SAWA, Motoyoshi KUBOUCHI, Takashi YOSHIMURA
Filed: 22 Dec 22
Utility
Semiconductor Device
17 Aug 23
Provided is a semiconductor device including a semiconductor substrate.
Yuki KARAMOTO, Kaname MITSUZUKA, Yoshihiro IKURA
Filed: 21 Apr 23
Utility
Semiconductor Device
17 Aug 23
Provided is a semiconductor device provided with a transistor section, the semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a plurality of trench portions extending from a front surface of the semiconductor substrate to the drift region, an emitter region of the first conductivity type which has a doping concentration higher than a doping concentration of the drift region and which is provided to extend from a trench portion to an adjacent trench portion among the plurality of trench portions on the front surface of the semiconductor substrate, and a trench bottom portion of a second conductivity type which is provided to a lower end of the trench portion, in which the transistor section has an electron passage region in which the trench bottom portion is not provided in a top view.
Yoshihiro IKURA, Seiji NOGUCHI, Yosuke SAKURAI, Ryutaro HAMASAKI
Filed: 18 Apr 23
Utility
Semiconductor Device and Manufacturing Method
17 Aug 23
Provided is a semiconductor device including: a first trench contact portion provided to an inside of a contact region; a second trench contact portion provided to an inside of an emitter region; a first plug portion of a second conductivity type, which is provided in contact with a lower end of the first trench contact portion and has a higher concentration than a base region; and a second plug portion of a second conductivity type, which is provided in contact with a lower end of the second trench contact portion, is provided to a position closer to a lower surface than the first plug portion, and has a higher concentration than the base region.
Seiji NOGUCHI, Ryutaro HAMASAKI, Daisuke OZAKI, Yosuke SAKURAI, Takuya YAMADA
Filed: 21 Apr 23
Utility
Power conversion device, control device, server and system
15 Aug 23
A power conversion device which converts electrical power generated by a distributed energy resource into electrical power corresponding to a power system is provided, comprising a communication unit which periodically receives, via communication, reception information indicating whether an accident has occurred in the power system, a disconnection unit which disconnects the distributed energy resource from the power system when the communication unit receives the reception information indicating accident occurrence, and a control unit which starts an islanding determination process for determining whether the distributed energy resource is in an islanding state by detecting a change in AC characteristics in the power system, when the communication unit does not receive the reception information for a predetermined first period.
Takayuki Nagakura, Songhao Yin
Filed: 24 Jun 20
Utility
Semiconductor device
15 Aug 23
A semiconductor device, including a substrate of a first conductivity type, an active region and a termination structure portion formed on a front surface of the substrate, and a plurality of regions of a second conductivity type formed concentrically surrounding the periphery of the active region in the termination structure portion.
Shoji Kitamura
Filed: 7 Oct 21
Utility
Semiconductor module
15 Aug 23
Provided is a semiconductor module including: an insulating circuit board that includes an insulating board and a conductive circuit pattern provided on an upper surface of the insulating board; a semiconductor chip that is provided above the insulating circuit board; a solder portion that bonds the circuit pattern and the semiconductor chip; and one or more temperature gradient adjustment portions configured to be bonded to the insulating circuit board and have at least one surface disposed to face at least one surface of the solder portion.
Yoshinori Otomo
Filed: 28 Sep 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
10 Aug 23
A silicon carbide semiconductor device, including a semiconductor substrate, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a plurality of trenches, a plurality of gate electrodes respectively provided in the trenches, a first conductive film, a first electrode, a second electrode, a plurality of first high-concentration regions, a plurality of second high-concentration regions, and a second conductive film.
Manabu TAKEI, Masakazu BABA, Shinsuke HARADA
Filed: 29 Dec 22
Utility
Switching Control Circuit, Power Supply Circuit
10 Aug 23
A switching control circuit for a power supply circuit including a first coil, a second coil configured to generate a voltage corresponding to a current flowing through the first coil, and a switching device configured to control the current flowing through the first coil.
Kiminori TANAKA
Filed: 23 Dec 22
Utility
Semiconductor Device and Semiconductor Device Manufacturing Method
10 Aug 23
A semiconductor device, including a semiconductor chip, a case having an opening formed therein and an inner wall communicating with the opening, and a sealing member.
Nobuhiro HIGASHI
Filed: 28 Dec 22
Utility
Cooler and Semiconductor Device
10 Aug 23
A cooler has a cooling main body portion that includes: a cooling wall in the Y direction including a first face with a heat generator thereon, and a second face opposite thereto; first and second flow path extending in the Y direction, the first flow path allowing refrigerant to flow in, and the second flow path allowing the refrigerant to flow out; cooling flow paths with a part of a wall surface comprising the second face; a partition spaced from the cooling wall in the Z direction, separating the first and the second flow paths from the cooling flow paths; and a first narrowing portion at a communication portion between a cooling flow path and the first flow path.
Yasutaka SANUKI, Jun NAKAMURA, Yuuji FUJIMOTO
Filed: 28 Nov 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
10 Aug 23
A semiconductor device has: a silicon carbide semiconductor substrate of a first conductivity type; a first semiconductor layer of the first conductivity type; a first semiconductor region of a second conductivity type; a second semiconductor region of the first conductivity type; a trench; a gate insulating film; a gate electrode; a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type.
Shinichiro MATSUNAGA, Masakazu BABA, Shinsuke HARADA
Filed: 29 Dec 22
Utility
Silicon Carbide Semiconductor Device
10 Aug 23
A silicon carbide semiconductor device, including a semiconductor substrate having an active region and a termination region that surrounds the active region in a top view, a first parallel pn layer provided in the semiconductor substrate in the active region, a second parallel pn layer provided in the semiconductor substrate in the termination region, a device structure provided in the active region, a first electrode electrically connected to the device structure, a second electrode, a first semiconductor region selectively provided in the termination region, and a second semiconductor region provided between the second parallel pn layer and the first semiconductor region, and in contact with the first semiconductor region.
Manabu TAKEI, Masakazu BABA, Masakazu OKADA, Shinsuke HARADA
Filed: 28 Dec 22
Utility
Integrated Circuit and Power Supply Circuit
10 Aug 23
An integrated circuit for a power supply circuit of a resonant type, the power supply circuit including a resonant circuit including a coil and a capacitor coupled in series, and a switching device controlling a resonant current flowing through the resonant circuit.
Takato SUGAWARA
Filed: 22 Dec 22
Utility
Semiconductor device
8 Aug 23
A circuit pattern, which is a second negative electrode wiring, and a horizontally extending area of a circuit pattern, which is a first negative electrode wiring, are connected electrically and mechanically by a vertically extending area of the circuit pattern and wires, which are an inter-negative-electrode wiring.
Masaki Takahashi, Kousuke Komatsu, Rikihiro Maruyama
Filed: 29 Oct 21
Utility
Semiconductor device
8 Aug 23
A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, first base regions of a second conductivity type, second base regions of the second conductivity type, a second semiconductor layer of the second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an interlayer insulating film, first electrodes, a second electrode, and trenches.
Yoshihito Ichikawa, Akimasa Kinoshita, Shingo Hayashi
Filed: 25 Jun 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
3 Aug 23
A silicon carbide semiconductor device, including a semiconductor substrate; a first semiconductor region and a second semiconductor region provided in the semiconductor substrate; a plurality of third semiconductor regions selectively provided in the semiconductor substrate, a plurality of first and second trenches penetrating through the second and third semiconductor regions and reaching the first semiconductor region; a plurality of gate electrodes respectively provided in the first trenches; a plurality of conductive films respectively embedded in the second trenches, junction interfaces between the first semiconductor region and the conductive films forming a plurality of Schottky barriers; a first electrode and a second electrode; and a plurality of Schottky barrier diodes that respectively include the plurality of Schottky barriers.
Masakazu BABA, Shinsuke HARADA
Filed: 23 Jan 23
Utility
Superjunction Semiconductor Device
3 Aug 23
A superjunction semiconductor device having a termination structure portion surrounding an active region in a plan view.
Naoki KUMAGAI, Masakazu OKADA, Shinsuke HARADA
Filed: 7 Apr 23
Utility
Semiconductor Device and Manufacturing Method Thereof
3 Aug 23
A semiconductor device includes a support, a semiconductor module, a heat transfer medium, and a first frame member.
Takahiro KOYAMA, Hiromichi GOHARA
Filed: 28 Dec 22
Utility
Semiconductor Device
3 Aug 23
A semiconductor device having a connecting region between an active region and an edge region.
Masakazu BABA, Shinsuke HARADA
Filed: 23 Jan 23