1577 patents
Page 11 of 79
Utility
Semiconductor Device
4 May 23
Breakdown of an internal element during an ESD application of a semiconductor device is suppressed.
Koki NARITA
Filed: 12 Oct 22
Utility
Semiconductor Device
27 Apr 23
A semiconductor device includes a semiconductor substrate, a gate insulating film, a gate, and a first polysilicon film.
Hitoshi MATSUURA
Filed: 22 Aug 22
Utility
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20 Apr 23
An integrated circuit includes a safety processor and a secure computing module including a secure processor, first and second cryptographic units for encrypting and decrypting data, and first and second data transfer units for transferring data between a memory and the first and second cryptographic units respectively.
Mohamed SOUBHI
Filed: 7 Oct 22
Utility
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20 Apr 23
A semiconductor device includes a cell region in which a plurality of unit cells are formed, and an outer peripheral region surrounding the cell region in plan view.
Yuta NABUCHI, Katsumi EIKYU, Atsushi SAKAI, Akihiro SHIMOMURA, Satoru TOKUDA
Filed: 12 Aug 22
Utility
76b971lw7ppfd4kfvxzjj7ckwfyh2ys5nzupv13k6cwv gu37
18 Apr 23
A semiconductor device includes a cladding layer and a first optical waveguide.
Tetsuya Iida, Yasutaka Nakashiba
Filed: 6 Mar 20
Utility
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18 Apr 23
First and second p-type semiconductor regions (electric-field relaxation layers) are formed by ion implantation using a dummy gate and side wall films on both sides of the dummy gate as a mask.
Kenichi Hisada, Koichi Arai, Hironobu Miyamoto
Filed: 1 Oct 20
Utility
xmkgvbn9f4lkttl1muh3qorxwvxkde
13 Apr 23
A communications controller is disclosed.
Thorsten HOFFLEIT, Christian MARDMÖLLER
Filed: 3 Oct 22
Utility
efs9fqs47vp4lqbmutafwldotgp0061xcb0gvsbq7dac34v47
13 Apr 23
A semiconductor device includes memory cells, word lines, a row address decoder, word line drivers, a first switch transistor, and second switch transistors.
Haruyuki OKUDA
Filed: 31 Aug 22
Utility
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13 Apr 23
A resistor material including a plurality of crystalline phases having a positive temperature coefficient of resistance, and an amorphous phase having a negative temperature coefficient of resistance and having a resistivity higher than the crystalline phase, in a mixed state, is provided.
Nozomi ITO, Yorinobu KUNIMUNE, Kenichiro ABE, Nobuhito SHIRAISHI
Filed: 22 Aug 22
Utility
pthbi897taz8up9gp9gz7d8eysklxedwfrrtfh
13 Apr 23
First conductive layer is connected to an impurity region which is a source region or an emitter region.
Takashi TONEGAWA
Filed: 11 Aug 22
Utility
3jou137rvl7aw315yxsj839wwbsovzdtplns577qz2cdhlg37ojii lzou9t
13 Apr 23
A semiconductor device and a method of manufacturing the same capable of ensuring a sufficient breakdown voltage near a terminal end portion of a cell portion are provided.
Yuta NABUCHI, Hiroshi YANAGIGAWA, Katsumi EIKYU, Atsushi SAKAI
Filed: 11 Aug 22
Utility
5mw2rgac7n330o5wp2305a8axqpygespczd3cwlrn
13 Apr 23
A semiconductor device includes resistor layers, and a wiring layer which is disposed at least either above or below the resistor layers.
Nobuhito SHIRAISHI
Filed: 31 Aug 22
Utility
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13 Apr 23
A multilayer wiring structure in which a plurality of conductive films and a plurality of interlayer dielectric films are laminated is formed so as to cover a main surface of a first semiconductor chip.
Katsunori TSUNETSUGU, Yasutaka NAKASHIBA
Filed: 11 Aug 22
Utility
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13 Apr 23
A semiconductor device includes a plurality of unit cells.
Katsumi EIKYU, Yuta NABUCHI, Atsushi SAKAI, Akihiro SHIMOMURA, Satoru TOKUDA
Filed: 11 Aug 22
Utility
4sql3o3 pslu4dlqkdiwglz4z9jr3rfoqzm3b
11 Apr 23
A semiconductor device includes a wiring substrate including a first wiring layer.
Tatsuaki Tsukuda
Filed: 5 Nov 21
Utility
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30 Mar 23
Detection transistor MNd flows a detection current IdN to a current path CP1n when an output voltage Vo generated in a load terminal PN1 is than a ground voltage GND.
Naohiro YOSHIMURA, Makoto TANAKA
Filed: 12 Sep 22
Utility
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30 Mar 23
Signal delay, etc. in a signal path from an electrode pad to a functional block is reduced.
Hiroko YOSHINAGA
Filed: 27 Jul 22
Utility
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30 Mar 23
A semiconductor device includes: a semiconductor substrate having first and second main surfaces; interlayer insulating films laminated on the first main surface in a thickness direction from the second main surface toward the first main surface; a top wiring arranged on a top interlayer insulating film of the plurality of interlayer insulating films, which is provided farthest from the first main surface in the thickness direction; and a passivation film arranged on the top interlayer insulating film so as to cover the top wiring.
Tatsuya USAMI, Yoshiki MARUYAMA, Yuki MURAYAMA, Yuji ISHII
Filed: 22 Aug 22
Utility
58rybcbxnrrklyzve2jik3jym06g30cuzmfdrnr3j143fwm6kqj
30 Mar 23
A semiconductor device includes an insulating layer, a first conductive film, a second conductive film and a thin-film resistor.
Nozomi ITO, Kazuyoshi MAEKAWA, Yuji TAKAHASHI, Yasuaki TSUCHIYA, Nobuhito SHIRAISHI
Filed: 29 Sep 21
Utility
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30 Mar 23
A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of wirings which are layered over the first main surface in a thickness direction that is a direction extending from the second main surface to the first main surface, and a passivation film which covers a top wiring that is a wiring being at a farthest position from the first main surface in the thickness direction, of the plurality of wirings.
Keiichi FURUYA
Filed: 14 Sep 22