1577 patents
Page 15 of 79
Utility
Semiconductor Device and Method of Manufacturing the Same
19 Jan 23
A semiconductor device with improved reliability is provided.
Kazuo TOMITA, Hiroki TAKEWAKA
Filed: 21 Sep 22
Utility
Semiconductor device and self-diagnostic method of semiconductor device
17 Jan 23
A semiconductor device includes an external terminal, an input buffer having an input terminal connected to the external terminal, a voltage generating circuit configured to generate a test voltage supplied to the input terminal, and a control circuit configured to determine whether the input buffer is deteriorated based on the test voltage supplied to the input terminal and an output level of the input buffer responding to the test voltage.
Daisuke Katagiri, Terunori Kubo, Hirotsugu Nakamura
Filed: 9 Apr 21
Utility
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17 Jan 23
In a trench gate type power MOSFET having a super-junction structure, both improvement of a breakdown voltage of a device and reduction of on-resistance are achieved.
Hiroshi Yanagigawa, Katsumi Eikyu, Masami Sawada, Akihiro Shimomura, Kazuhisa Mori
Filed: 8 Dec 20
Utility
qodx3e0iibg088amtrogo5949ko1td3bk5i56f8vyd659zuy1f
17 Jan 23
A semiconductor device capable of performing filter processing while suppressing an increase in processing time is provided.
Tsuyoshi Okumura
Filed: 10 May 19
Utility
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12 Jan 23
A semiconductor device including an element isolation in a trench formed in an upper surface of a semiconductor substrate, a trench isolation including a void in a trench directly under the element isolation, and a Cu wire with Cu ball connected to a pad on the semiconductor substrate, is formed.
Takayuki IGARASHI, Hirokazu SAYAMA
Filed: 8 Jun 22
Utility
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12 Jan 23
A wafer having a semiconductor substrate including a peripheral region and a central region, an insulating layer and a semiconductor layer is prepared first.
Hideki MAKIYAMA
Filed: 7 Jul 21
Utility
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12 Jan 23
The data processing device includes the inference processor and learning processor.
Shunsuke OKUMURA, Koichi NOSE
Filed: 7 Jul 21
Utility
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10 Jan 23
A semiconductor device includes a plurality of memory cells connected to a match line; a word line driver connected to a word line; a valid cell configured to store a valid bit indicating valid or invalid of an entry; a first precharge circuit connected to one end of the match line and configured to precharge the match line to a high level; and a second precharge circuit connected to the other end of the match line and configured to precharge the match line to a high level.
Makoto Yabuuchi
Filed: 12 May 21
Utility
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10 Jan 23
To provide a semiconductor device with a tolerant buffer capable of protecting the internal circuit even when the power supply potential is turned 0 [V].
Dai Kamimaru
Filed: 25 Aug 20
Utility
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10 Jan 23
A semiconductor device includes a first transistor that flows a current to a load, a current generation circuit that outputs a current corresponding to a power consumption of the first transistor, a temperature sensor, a resistor-capacitor network coupled between the current generation circuit and the temperature sensor and an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor network, wherein the resistor-capacitor network comprises a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance between the first transistor and the temperature sensor.
Hiroki Nagatomi, Makoto Tanaka
Filed: 16 Jun 21
Utility
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3 Jan 23
A manufacturing method of a semiconductor device includes: (a) forming a gate structure for a control gate electrode on a semiconductor substrate; (b) forming a charge storage film so as to cover a first side surface, a second side surface, and an upper surface of the gate structure; (c) forming a conductive film for a memory gate electrode on the charge storage film; (d) removing a part of the charge storage film and a part of the conductive film such that the charge storage film and the conductive film remain in this order on the first side surface and the second side surface of the gate structure, thereby forming the memory gate electrode; and (e) removing apart of the gate structure separate from the first side surface and the second side surface such that a part of the semiconductor substrate is exposed from the gate structure.
Takuya Maruyama, Takahiro Maruyama
Filed: 25 Sep 20
Utility
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3 Jan 23
To provide a semiconductor device with a digital-controlled DC-DC converter capable of stable feedback operation while minimizing area, the semiconductor device includes a DC-DC converter whose characteristic is determined by the control parameter, a flash memory and a processor that controls the flash memory, both of which operate at a power supply based on the output of the DC-DC converter.
Makoto Nonaka
Filed: 28 Apr 20
Utility
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3 Jan 23
A phase locking circuit includes: a phase comparator; a pulse generation circuit; a charge pump circuit; a loop filter circuit; and a voltage-controlled oscillator.
Naoaki Hiyama
Filed: 2 Dec 21
Utility
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3 Jan 23
A semiconductor device includes first and second CPUs, first and second SPUs for controlling a snoop operation, a controller supporting ASIL D of a functional safety standard and a memory.
Yuki Hayakawa, Toshiyuki Kaya, Shinichi Shibahara
Filed: 4 Dec 20
Utility
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29 Dec 22
A semiconductor device includes a syndrome generation circuit configured to generate a syndrome code based on data and an error correction code corresponding to the data, an error determination circuit configured to detect a 1-bit error in the data based on the syndrome code, and multi-bit error detection circuit configured to determine whether the data detected to have 1-bit error includes a multi-bit error by using an error address of the data detected to have 1-bit error and an error syndrome code of the data detected to have 1-bit error.
Takashi ISHIBASHI, Hiroyuki HASHIMOTO
Filed: 6 May 22
Utility
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29 Dec 22
A circuit for use in frame filtering is disclosed.
Christian MARDMÖLLER, Thorsten HOFFLEIT
Filed: 27 Jun 22
Utility
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29 Dec 22
A semiconductor device has an impurity region covering a bottom of a gate trench and a column region.
Machiko SATO, Akihiro SHIMOMURA
Filed: 1 Sep 22
Utility
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27 Dec 22
An electronic device capable of reducing a process associated with a radar search is provided.
Yuji Motoda
Filed: 2 Dec 19
Utility
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27 Dec 22
Simulator includes a first core unit corresponding to the first simulation model, a second core unit corresponding to the second simulation model, a slave block unit for communicating with one of the first core unit and the second core unit, the first core unit and the second core unit and a simulation control unit for causing either to execute instructions.
Megumi Yoshinaga, Koichi Sato
Filed: 12 May 20
Utility
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22 Dec 22
A fault prediction device capable of predicting an accurate deterioration state is provided.
Toshiyuki SYO
Filed: 10 Jun 22