1577 patents
Page 18 of 79
Utility
Semiconductor device
1 Nov 22
A semiconductor device 1 includes: a first oscillator 11_RC1 configured to operate at a detected voltage, the first oscillator having first temperature dependency; a second oscillator 11_RC4 configured to operate at the detected voltage, the second oscillator having second temperature dependency; a count unit configured to count an output of the first oscillator and an output of the second oscillator, the output of the first oscillator and the output of the second oscillator being supplied to the count unit; an arithmetic unit configured to calculate a count value CNT (T1) of the first oscillator and a count value CNT (T4) of the second oscillator, the count values of the first and second oscillators being counted by the count unit; and a determining unit configured to compare an output of the arithmetic unit with a threshold value to output a detected result signal corresponding to a result of the comparison.
Toshifumi Uemura
Filed: 22 Jul 21
Utility
Instruction list generation
25 Oct 22
A system for and a method of generating an ordered list of instructions comprising a list of pixel coordinates which are vertices of triangles in a strip of a reference input image in a source coordinate system such that transformation of the vertices to a corresponding output image in a destination coordinate system causes the triangles to be mapped to a block of image data which maps to a block of line memory (or “texture cache”).
Bjoern Toschi
Filed: 27 Nov 18
Utility
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25 Oct 22
A semiconductor device with improved reliability is provided.
Kazuo Tomita, Hiroki Takewaka
Filed: 17 Nov 20
Utility
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20 Oct 22
The semiconductor device 1 comprises a processor 2, a memory connected to the processor and a control circuit, and comprises an active operation mode and a standby operation mode.
Koichi TANIGAWA, Takayoshi SHIRAISHI
Filed: 15 Apr 21
Utility
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20 Oct 22
A semiconductor device includes a semiconductor substrate having first and second surfaces, an insulated gate bipolar transistor (IGBT) and a diode formed on the semiconductor substrate, wherein the diode comprises a drift layer of a first conductivity type formed so as to have a first region on the first surface of the semiconductor substrate, a first body layer of a second conductivity type formed so as to have a second region adjacent to the first region at an upper portion of the drift layer, a first floating layer of the second conductivity type formed so as to have a third region adjacent to the first region at an upper portion of the drift layer, a first trench electrode formed in a region adjacent to the first floating layer at an upper portion of the drift layer, and a first control gate formed on top of the first region.
Nao NAGATA
Filed: 15 Apr 21
Utility
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18 Oct 22
A semiconductor device includes a semiconductor substrate having a main surface, a gate electrode formed on the main surface of the semiconductor substrate, a side-wall oxide film formed on a side wall of the gate electrode, a first insulating layer formed on the gate electrode and containing silicon nitride, and a second insulating layer formed between the gate electrode and the first insulating layer and containing silicon oxide.
Yukio Maki
Filed: 30 Apr 19
Utility
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18 Oct 22
To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties.
Tadashi Yamaguchi
Filed: 27 Apr 20
Utility
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13 Oct 22
A semiconductor device includes an external terminal, an input buffer having an input terminal connected to the external terminal, a voltage generating circuit configured to generate a test voltage supplied to the input terminal, and a control circuit configured to determine whether the input buffer is deteriorated based on the test voltage supplied to the input terminal and an output level of the input buffer responding to the test voltage.
Daisuke KATAGIRI, Terunori KUBO, Hirotsugu NAKAMURA
Filed: 9 Apr 21
Utility
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6 Oct 22
A semiconductor integrated circuit includes a first semiconductor layer, a second semiconductor layer, and a first cell and a second cell which are arranged adjacent to each other along a first direction.
Yasuhiro YADOGUCHI
Filed: 30 Mar 21
Utility
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4 Oct 22
Access control is achieved in consideration of write training.
Katsuya Mizumoto, Toshiyuki Hiraki, Nobuhiko Honda, Sho Yamanaka, Takahiro Irita, Yoshihiko Hotta
Filed: 15 Jan 21
Utility
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4 Oct 22
A semiconductor device includes an image recognition device having a convolution arithmetic processing circuit.
Atsushi Nakamura, Akira Utagawa, Shigeru Matsuo
Filed: 13 Jul 18
Utility
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27 Sep 22
An object of the present invention is to provide an information input device capable of realizing high-precision touch operations.
Kentarou Niikura
Filed: 17 Feb 21
Utility
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27 Sep 22
A semiconductor device performs a software lock-step.
Atsushi Nakamura, Akihiro Yamamoto, Kazuaki Terashima, Manabu Koike
Filed: 6 May 20
Utility
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27 Sep 22
In a method of manufacturing a semiconductor device according to one embodiment, after a semiconductor wafer including a non-volatile memory, a bonding pad and an insulating film comprised of an organic material is provided, a probe needle is contacted to a surface of the bonding pad located in a second region, and a data is written to the non-volatile memory.
Yoshiaki Sato, Mitsunobu Wansawa, Akira Matsumoto, Yoshinori Deguchi, Kentaro Saito
Filed: 14 Jan 21
Utility
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27 Sep 22
A method of manufacturing a semiconductor device includes forming an interlayer insulating film over a main surface of a semiconductor substrate, forming a first conductive film pattern for a first pad and a second conductive film pattern for a second pad over the interlayer insulating film, forming an insulating film over the interlayer insulating film such that the insulating film covers the first and the second conductive film patterns, forming a first opening portion for the first pad, the first opening portion exposing a portion of the first conductive film pattern, and a second opening portion for the second pad, the second opening portion exposing a portion of the second conductive film pattern, in the insulating film, and forming a first plated layer by plating over the portion of the first conductive film pattern exposed in the first opening portion, and a second plated layer.
Takashi Tonegawa
Filed: 13 Jul 20
Utility
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27 Sep 22
An electronic system device includes a semiconductor device and a power generating device for generating a power supply voltage.
Kazuya Hashimoto, Kazuya Uejima
Filed: 23 Mar 20
Utility
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27 Sep 22
A semiconductor device for controlling a three-phase motor with double windings, includes a first inverter that drives a first winding of the three-phase motor, a second inverter that drives a second winding of the three-phase motor and a communication line between the first and second inverters.
Naohiko Aoki
Filed: 25 Sep 20
Utility
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27 Sep 22
A communications network controller module for storing media data in memory is disclosed.
Dnyaneshwar Kulkarni, Christian Mardmöller
Filed: 9 Nov 16
Utility
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22 Sep 22
Shiro KAMOHARA, Yasushi YAMAGATA, Takumi HASEGAWA, Nobuyuki SUGII
Filed: 10 Jun 22
Utility
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22 Sep 22
A resolver converter includes a tracking loop circuit that calculates an angle θ from a resolver output signal, a control and diagnosis circuit that controls the tracking loop circuit and diagnoses based on the resolver output signal, wherein the control and diagnosis circuit, by operating the tracking loop circuit as a direct digital synthesizer (DDS), synchronously detects a noise signal superimposed on the resolver output signal.
Takashi UMAMICHI
Filed: 22 Mar 21