1577 patents
Page 22 of 79
Utility
Semiconductor Device
26 May 22
A semiconductor device capable of decreasing a jitter component is provided.
Norihiro SAITOU
Filed: 3 Nov 21
Utility
Semiconductor Device and Method of Manufacturing the Same
26 May 22
A semiconductor device includes: a wiring substrate; a semiconductor chip mounted on the wiring substrate; a heat release sheet arranged on the semiconductor chip to cover the entire semiconductor chip and having a larger area than an area of the semiconductor chip; and a cover member which covers the semiconductor chip and the heat release sheet and to which the heat release sheet is fixed.
Toshihiko AKIBA, Yusuke TANUMA
Filed: 3 Nov 21
Utility
Semiconductor Device and Electronic Device
26 May 22
A first semiconductor element (laser diode) and a second semiconductor element (laser diode) are connected to each other in series between a wiring electrically connected to an anode of the first semiconductor element and a wiring electrically connected to a cathode of the second semiconductor element.
Ryuichi OIKAWA
Filed: 3 Nov 21
Utility
Semiconductor Device and Method of Manufacturing the Same
26 May 22
A semiconductor device has a semiconductor chip having a plurality of pads and wires electrically connected to the plurality of pads, respectively.
Kenji IKURA
Filed: 5 Nov 21
Utility
Semiconductor Device
26 May 22
A semiconductor device includes a main circuit and a peripheral circuit inputting/outputting a signal from/to the main circuit, the main circuit including: a memory cell array; a sense amplifier; a first output holding circuit holding the read data output from the sense amplifier; a second output holding circuit receiving the read data as its input output from the first output holding circuit; and a delay circuit outputting a delay signal for activating the second output holding circuit to be later than the first output holding circuit.
Yohei SAWADA
Filed: 5 Nov 21
Utility
Method of Manufacturing Semiconductor Device
26 May 22
An insulating film is formed on a semiconductor substrate, and a silicon film is formed on the insulating film.
Satoru MATSUMOTO
Filed: 28 Oct 21
Utility
Semiconductor Device and Method of Manufacturing the Same
26 May 22
A built-in resistor electrically connecting a trench gate electrode and a gate pad is formed of a conductive film formed on a semiconductor substrate via an insulating film.
Ryota KURODA, Hitoshi MATSUURA
Filed: 3 Nov 21
Utility
Semiconductor device having injection enhanced type insulated gate bipolar transistor with trench emitter and method of manufacturing the same
24 May 22
A semiconductor device having an IE-type IGBT structure comprises a stripe-shaped trench gate and a stripe-shaped trench emitter arranged to face the trench gate formed in a semiconductor substrate.
Nao Nagata
Filed: 3 Dec 19
Utility
Semiconductor device
24 May 22
A semiconductor device has a split-gate type MONOS structure using a FinFET, and it includes a source and a drain each formed of an n-type impurity diffusion layer, a first channel forming layer which is formed under a control gate and is formed of a semiconductor layer doped with a p-type impurity, and a second channel forming layer which is formed under a memory gate and is formed of a semiconductor layer doped with an n-type impurity.
Digh Hisamoto, Yoshiyuki Kawashima, Takashi Hashimoto
Filed: 29 Oct 20
Utility
Electronic device and power receiving control method thereof
17 May 22
To make an excessive power receiving request by a sink when a USB Type-C legacy cable is used.
Takayuki Suzuki
Filed: 7 Oct 20
Utility
Semiconductor device including a package substrate and a semiconductor chip
17 May 22
A semiconductor device includes a package substrate, a semiconductor chip and a solder bump.
Hideaki Tsuchiya, Akira Matsumoto
Filed: 15 Jul 20
Utility
Semiconductor device and method of manufacturing the same
17 May 22
A semiconductor device includes a semiconductor substrate, an insulating film, a ferroelectric film, a first seed layer and a control gate electrode.
Tadashi Yamaguchi
Filed: 13 Nov 20
Utility
Method of Semiconductor Device
12 May 22
In a case of achievement of a neural network circuit using a plurality of nonvolatile memory cells, a technique capable of accurately reading information recorded in the plurality of nonvolatile memory cells is provided.
Yoshiyuki KAWASHIMA
Filed: 15 Oct 21
Utility
Semiconductor Device and Method of Manufacturing the Same
12 May 22
A semiconductor device includes a ferroelectric memory having a ferroelectric film between a gate electrode and a semiconductor substrate.
Takahiro MARUYAMA
Filed: 8 Nov 21
Utility
Semiconductor Device
12 May 22
A plurality of non-volatile memory cells are used to realize synapses in a neural network circuit.
Yoshiyuki KAWASHIMA
Filed: 15 Oct 21
Utility
Semiconductor device and semiconductor system equipped with the same
10 May 22
A semiconductor device includes a master circuit which outputs a first write request signal for requesting to write data, a bus which receives the data and the first write request signal, a bus control unit which is arranged on the bus, generates an error detection code for the data and generates a second write request signal which includes second address information corresponding to first address information included in the first write request signal and memory controllers which each write the data into a storage area of an address designated by the first write request signal and writes the error detection code into a storage area of an address designated by the second write request signal in the storage areas of memories.
Kimihiko Nakazawa, Takahiro Irita
Filed: 14 Jan 21
Utility
Semiconductor device and method of manufacturing semiconductor device
10 May 22
A method of manufacturing a semiconductor device of one embodiment includes the steps of: forming a drift region in a first surface of a semiconductor substrate; forming a body region having a first portion disposed in the first surface, and a second portion disposed in the first surface so as to surround the first portion and the drift region; forming a hard mask, having an opening over the drift region, in the first surface; forming a reverse conductivity region in the first surface by ion implantation using the hard mask; forming a trench in the first surface by anisotropic etching using the hard mask; and embedding an isolation film in the trench.
Hiroaki Sekikawa, Takahiro Mori, Yuji Ishii
Filed: 4 Apr 19
Utility
Image Processing Device and Image Processing Method
5 May 22
Quyet Hoang, Hai NGUYEN, Son LE, Kenichi IWATA, Tetsuya SHIBAYAMA
Filed: 4 Nov 20
Utility
Electronic Device and Semiconductor Device
5 May 22
The electronic device includes a first semiconductor device having a logic circuit, a second semiconductor device having a memory circuit, and a wiring substrate to which the first and second semiconductor devices are mounted.
Shuuichi KARIYAZAKI
Filed: 21 Oct 21
Utility
Semiconductor Device
5 May 22
The semiconductor device has the main surface, the semiconductor substrate having the first impurity region formed on the main surface, the first electrode formed on the main surface having the first impurity region, the insulating film formed on the main surface such that surround the first electrode, the second electrode formed on the insulating film such that spaced apart from the first electrode and annularly surround the first electrode, and the semi-insulating film.
Kodai OZAWA, Sho NAKANISHI
Filed: 1 Nov 21