1577 patents
Page 23 of 79
Utility
Semiconductor Device and Inverter Device
5 May 22
An inverter device includes first and second input terminals, a series circuit having a plurality of switch elements coupled between the first and second input terminals.
Tetsu TODA, Tatsuo HARADA, Daisuke IIJIMA, Syuuichi KIKUCHI, Kotaro KURODA
Filed: 5 Nov 20
Utility
Semiconductor device
3 May 22
A semiconductor device includes a substrate, an optical element, and a semiconductor element.
Seigo Namioka, Yasutaka Nakashiba
Filed: 6 Mar 20
Utility
l0o1cj6a7tlnfvmuie1zef uva9p
28 Apr 22
A semiconductor device includes a dynamic reconfiguration processor that performs data processing for input data sequentially input and outputs the results of data processing sequentially as output data, an accelerator including a parallel arithmetic part that performs arithmetic operation in parallel between the output data from the dynamic reconfiguration processor and each of a plurality of predetermined data, and a data transfer unit that selects the plurality of arithmetic operation results by the accelerator in order and outputs them to the dynamic reconfiguration processor.
Taro FUJII, Takao TOI, Teruhito TANAKA, Katsumi TOGAWA
Filed: 5 Jan 22
Utility
n0dpdb8x3x5mybu170hr6yshf3obp8dd7k374fgscjj3dgu1pkzu5szodwr
28 Apr 22
A semiconductor device includes a memory mat having: a plurality of memory cells; a sense amplifier connected to a memory cell selected from the plurality of memory cells; a first power supply wiring; a first switch connected between the sense amplifier and the first power supply wiring and made an ON state in operating the sense amplifier; and a second switch connected to the sense amplifier and made an ON state in operating the sense amplifier, a second power supply wiring arranged outside the memory mat and connected to the first power supply wiring, a third power supply wiring arranged outside the memory mat and connected to the sense amplifier via the second switch, and a short switch arranged outside the memory mat and connected between the second and third power supply wirings.
Tetsuo FUKUSHI, Hiroyuki TAKAHASHI, Muneaki MATSUSHIGE
Filed: 14 Oct 21
Utility
yx4ufh9s9s2nvleacrq7hoc11bw7rcarkz6dzsc6y1yjh6awz79qi
28 Apr 22
A PLL circuit includes a phase comparator, an integrator path, a proportional path, a current controlled oscillator, a divider, and a double integrator path.
Atsushi MOTOZAWA
Filed: 14 Oct 21
Utility
0uoc226vqmkduif19mdq1wtcgdcnm5d
21 Apr 22
A data processing device has an instruction decoder, a control logic unit, and ALU.
Sugako OHTANI, Hiroyuki KONDO
Filed: 29 Dec 21
Utility
wes8tzzx43y0btkismeirf8s8gay2huw17phx
21 Apr 22
A first insulating film is formed on a semiconductor substrate in each of a first region in which a memory transistor is to be formed, a second region in which a selection transistor is to be formed, a third region in which a high-withstand-voltage transistor is to be formed, and a fourth region in which a low-withstand-voltage transistor is to be formed.
Yuto OMIZU
Filed: 13 Oct 21
Utility
ejfxfgythjkl1t7bmy5ti0nn8c3bli8glmjhz5ynt49mgbhoyozx97
21 Apr 22
Reliability of a semiconductor device is improved, An interlayer insulating film and a pair of conductive layers that separate from each other through the interlayer insulating film are formed on a semiconductor substrate SUB.
Akira MITSUIKI
Filed: 13 Oct 21
Utility
ymkajux2vpx1qvk c9f8tio
19 Apr 22
A semiconductor device includes a first insulating layer, an optical modulator, and a multilayer wiring layer.
Teruhiro Kuwajima, Yasutaka Nakashiba
Filed: 25 Mar 20
Utility
fh23ni4ld4f2wuifhi6o5vrmxjnuzhs8664mbni5turxt55ve0fugwi
19 Apr 22
A semiconductor device includes a bridge circuit comprising first to fourth elements, a first diagnostic circuit that detects a potential difference between two intermediate nodes of the bridge circuit and a control circuit that detects a failure of the first or second element based on an output of the first diagnostic circuit, wherein the first and second elements are first and second power transistors connected in series.
Akio Kamimoto
Filed: 27 Aug 20
Utility
h6go5p5xwqn4cmk3jvx2jm67w6pwu1gmanr8th8pkytqk1yaa7
14 Apr 22
The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip.
Tadashi KAMEYAMA, Masanori IKEDA, Masataka MINAMI, Kenichi SHIMADA, Yukitoshi TSUBOI
Filed: 22 Dec 21
Utility
masxvkbgc15 9raawbl85xzxs6kt9svu6t4w7b370fgx3xcq8
14 Apr 22
The data processing apparatus includes a memory protection setting storage unit capable of storing a plurality of address sections as memory protection setting targets, a plurality of first determination units provided for each of the address sections stored in the memory protection setting storage unit and provisionally determining whether or not an access request is permitted based on whether or not an access destination address specified by the access request corresponds to the address section acquired from the memory protection setting storage unit, and a second determination unit finally determining whether or not the access request is permitted based on the classification information and the results of provisional determinations by the first determination unit.
Yasuhiro SUGITA
Filed: 22 Dec 21
Utility
mheu7pp2s8pg3g90q ra11ir2nvfi8c1m3e1i9eezk2nmnp0le7dq7
14 Apr 22
A first MISFET is formed on a semiconductor layer of an SOI substrate in a circuit region and a second MISFET composing a TEG for VC inspection is formed on the semiconductor layer of the SOI substrate in a TEG region.
Tetsuya YOSHIDA, Tomohiro TOMIZAWA
Filed: 21 Sep 21
Utility
d1soutp6i8356falswf32uj9vowlyfmheft4ztedy9oumgq8t8kxbymrns9
14 Apr 22
A semiconductor device includes a semiconductor chip, first and second source terminals and a Kelvin terminal, wherein the semiconductor chip includes a first source electrode coupled to the first source terminal through a first connecting portion, a second source electrode coupled to the second source terminal through a second connecting portion, a Kelvin pad coupled to the Kelvin terminal and formed independently of the first source electrode, a power MOSFET that has a source coupled to the first source electrode, a sense MOSFET that has a source coupled to the second source electrode, a source pad formed on a portion of the first source electrode and coupled to the first connecting portion, a plurality of source potential extraction ports formed around a connection point between the first connecting portion and the source pad and a plurality of wires coupled between the source potential extraction ports and the Kelvin pad.
Yoshimasa UCHINUMA, Yusuke OJIMA
Filed: 12 Oct 20
Utility
z8c4nzuw84yn863avhm5oyjdbve2s3zfgt0roq4m7kxhi9
5 Apr 22
A storage device stores a source code and a model created by referencing a source code.
Tetsuji Tsuda, Saika Arai
Filed: 13 Nov 20
Utility
uthultupf8m9kj6nyrxwnibe74y tyesyu4wbhucbr56
5 Apr 22
A semiconductor device includes a first master and a second master configured to issue requests for accessing to a memory, a first request issuing controller coupled to the first master, and configured to hold the request issued from the first master, a second request issuing controller coupled to the second master, and configured to hold the request issued from the second master, a bus arbiter coupled to the first request issuing controller and the second request issuing controller, a memory controller coupled to the bus arbiter, and including a buffer configured to store the requests issued from the first master and the second master, and a central bus controller configured to grant access rights to the first request issuing controller and the second request issuing controller based on space information of the buffer.
Sho Yamanaka, Toshiyuki Hiraki, Yoshihiko Hotta, Takahiro Irita
Filed: 9 Oct 20
Utility
3tfgfacqbdh887jiv7n3z9k1e835f4rv24ljh
5 Apr 22
Reduction in power consumption of a semiconductor device is achieved.
Kazuya Uejima, Kazuhiro Koudate
Filed: 22 Dec 20
Utility
q53pj271sz 5ydqolqprc
5 Apr 22
In a deep trench DTC reaching a predetermined depth from a first main surface of a semiconductor substrate SUB, a plurality of columnar conductors CCB including plugs PUG and field plates FP are formed.
Senichirou Nagase, Tsuyoshi Kachi, Yoshinori Hoshino
Filed: 23 Mar 20
Utility
kcqetyc96v7btoj1nn1tbate04u lmik1v5i6asqkttax8s
31 Mar 22
Example implementations include a method of generating a first authentication code based at least partially on an authentication key and an application key, transmitting to a secure subsystem of the local processing device the authentication key, the application key, and the first authentication code, generating, at the secure subsystem, a second authentication code based at least partially on the authentication key and the application key, and generating, at the secure subsystem, a secure application key, in accordance with a determination that the first authentication code and the second authentication code satisfy an authentication criterion.
Giancarlo PARODI
Filed: 25 Sep 20
Utility
c4nbrc123rg4s6yld8rs3tem o22kqkp2ey3e83f8iyyj
31 Mar 22
The magnetic pole position of the rotor is estimated with high accuracy at the initial start of a three-phase motor of the sensorless system.
Satoshi NARUMI, Minoru KUROSAWA, Takeshi OHTSUKI
Filed: 20 Sep 21