1577 patents
Page 20 of 79
Utility
Method for Predicting Reliability of Semiconductor Device
18 Aug 22
A reliability prediction method includes: calculating a change of each of a plurality of alloy phases at a bonding portion between an electrode pad and a bonding wire; setting a generation of a metal oxide phase caused by a corrosion reaction, based on an initial crack structure of the bonding portion; calculating an elastic strain energy at each of specified portions of the bonding portion; setting a progress of a crack, based on the elastic strain energy at each of the specified portions; and predicting a lifetime of the semiconductor device, based on a length of the crack due to the progress of the crack.
Takuo FUNAYA
Filed: 28 Jan 22
Utility
Radar Distance Measuring Device and Radar Distance Measuring Method
18 Aug 22
A radar distance measuring device having a BPF type ΣΔADC and capable of controlling a band of a BBF and modulation setting of a chirp signal in conjunction therewith is provided.
Nobuyuki MORIKOSHI, Takashi OSHIMA, Takahiro NAKAMURA
Filed: 8 Feb 22
Utility
vw67f4l2bgmebem7bja4yzxlxrevt2tw5z25r
18 Aug 22
A microcomputer performs a power supply operation to a wireless communication module at a first time interval set based on a power generation amount at a lowest day power generation amount of a temperature differential power generation module.
Shiro KAMOHARA, Akira TANABE, Kazuya UEJIMA, Jun UEHARA, Kazuya OKUYAMA
Filed: 17 Feb 21
Utility
17lx3dhlt48vjh73swvuhjvyfirkajcsesc2w3mzve4azch2kl1sfzuzzj8
16 Aug 22
A MASH type sigma delta AD converter includes a modulator, an analog filter filtering an extraction signal obtained by extracting a probe signal and an quantization error generated in a quantizer within a sigma delta modulator, a low speed AD converter performing an AD conversion of an output signal of the analog filter, a first adaptive filter searching for a transfer function of the sigma delta modulator, a second adaptive filter searching for a transfer function from an output of the modulator to the low speed AD converter via the analog filter, and a noise cancellation circuit cancelling the probe signal and the quantization error included in an output signal of the quantizer using the search results by the first and second adaptive filters.
Takashi Oshima, Tetsuo Matsui, Mitsuya Fukazawa, Katsuki Tateyama, Masaki Fujiwara
Filed: 27 Sep 19
Utility
cylvrdu1ur1njveynfvao7mlenc37y0ltmuz2kzrb7mb0e
16 Aug 22
A roadside radio device includes a first radio unit which receives a radio data packet from an in-vehicle radio device, and a first application unit which receives application data included in the radio data packet.
Suguru Fujita, Takashi Tono
Filed: 29 Sep 20
Utility
2fkjn rxfgjr0bgdvaqbs4y8y6o
11 Aug 22
A data processing device includes a first CPU (Central Processing Unit), a first memory, a CAN (Controller Area Network) controller and a system bus coupled to the first CPU, the first memory and the CAN controller, wherein the CAN controller comprises a receive buffer that stores a plurality of messages each of which has a different ID, and a DMA (Direct Memory Access) controller that selects the latest message among messages having a fist ID stored in the receive buffer and transfers the selected latest message to the first memory, wherein the message is one of CAN, CAN FD and CAN XL messages.
Takuro NISHIKAWA
Filed: 11 Feb 21
Utility
31hc5wagb1blylkom6 9som
9 Aug 22
A computer-implemented method of generating functional safety data for a design of an electronic component includes receiving attribute data for elements in an electronic component.
Agostino Cefalo, Ricardo Vincelli
Filed: 8 Jan 18
Utility
5ln4 kw6hp5cquabz9fkig3n12sqpeuj42id0zqm
4 Aug 22
A semiconductor device of the present invention includes: a P-type output transistor configured to have a source to which a power supply voltage is applied, and a drain connected to an external connection pad; a gate wiring configured to be connected to a gate of the output. transistor; a signal transmitting portion configured to transmit an input signal to the gate wiring; and a voltage-breakdown protecting portion configured to apply the power supply voltage to a back gate of the output transistor if a voltage on the external connection pad is equal to or lower than the power supply voltage, or the voltage-breakdown protecting portion bringing the signal transmitting portion into a disconnection state and applies the voltage on the external connection pad to the gate and the back gate of the output transistor if the voltage applied on the external connection pad is higher than the power supply voltage.
Fumiaki YANAGIHASHI
Filed: 23 Dec 21
Utility
23q822qf6e3iks9szkf2kmr4o0s21kgr38otuopdom49 1wpv6
28 Jul 22
The semiconductor device according to one embodiment includes a semiconductor substrate having a first surface and a second surface on an opposite side of the first surface, a gate insulating film formed on the first surface, a gate formed on the first surface via the gate insulating film, a source region formed in the first surface side of the semiconductor substrate, a body region formed so as to be in contact with the source region and including a channel region, a drain region formed in the second surface side of the semiconductor substrate, and a drift region formed so as to be in contact with the second surface side of the body region and the first surface side of the drain region.
Yasutaka NAKASHIBA, Akihiro SHIMOMURA, Masami SAWADA
Filed: 16 Dec 21
Utility
cz4yhu4lnc j946xh8jt807
26 Jul 22
It is an object of the present invention to provide a technique capable of performing user estimation without making the user aware of it.
Wataru Kurihara, Takehiro Mikami
Filed: 8 Oct 19
Utility
czbbp63m5i5 7rhghh26tck5vd4y9w15dgrsvbazs983664y
26 Jul 22
Along with the miniaturization of the semiconductor memory device, the resistor and parasitic capacitance of the wires become large, which prevents the semiconductor memory device from being speeded up.
Makoto Yabuuchi
Filed: 11 Nov 20
Utility
i6u5xodu3yjsio9av0za0kdmp4i43alsxf
19 Jul 22
The semiconductor device controls the first circuit for supplying/stopping the current supplied by a DC power supply to the latching solenoid consisting of a coil and a movable iron core and a permanent magnet, the current is measured based on the input from the current detection circuit.
Shiro Kamohara, Kazuya Uejima
Filed: 16 Mar 20
Utility
k4298o5o0w17wn4smlq9b 7bkkzp5mn79esyx19jouedzgwfvd1b0xhj5132
19 Jul 22
The polysilicon resistance has a large resistance variation rate after the end of the mold packaging process.
Chiemi Hashimoto, Kosuke Yayama, Tomokazu Matsuzaki
Filed: 7 Aug 19
Utility
hjrx4patwjs1o37iwtvlhxl4rm123refzy0hu6nfq
19 Jul 22
A semiconductor device capable of reducing electric power consumption while suppressing deterioration in reliability is provided.
Kazuya Uejima
Filed: 18 Sep 19
Utility
swltd4vzbqiahrf21raxar4d05l8zankmo6y61sfk7qb792eh7pxok
19 Jul 22
A semiconductor device containing a CPU capable of receiving an interrupt request signal and a task control circuit is provided.
Kazuya Ishida, Hiroyuki Kondo
Filed: 20 Feb 18
Utility
n0esmcxv7pb65rp6gvxswnu 0u742ialwtdvnbu34hz0f
19 Jul 22
A semiconductor device is provided with a semiconductor chip.
Yasutaka Nakashiba
Filed: 7 Jul 17
Utility
387rbydhznv09dj81sniph samoa98y9t2y5lpso
19 Jul 22
When a memory cell is formed over a first fin and a low breakdown voltage transistor is formed over a second fin, the depth of a first trench for dividing the first fins in a memory cell region is made larger than that of a second trench for dividing the second fins in a logic region.
Shibun Tsuda, Tomohiro Yamashita
Filed: 10 Feb 20
Utility
737u6yvv8jd0w0reytr8y7gzrp3mrhmkewpb0 zm8le2i8z7n1
14 Jul 22
A semiconductor device comprising a wiring member with which a semiconductor chip is electrically connected including: a first wiring layer having a plurality of first conductive patterns; a second wiring layer arranged next to the first wiring layer in a thickness direction of the wiring member, and having a second conductive pattern; and a third wiring layer arranged next to the second wiring layer in the thickness direction of the wiring member, and having a third conductive pattern.
Wataru SHIROI, Shuuichi KARIYAZAKI
Filed: 8 Jan 21
Utility
2xgmtk5q8hql0af3v984 vc47ouvkmu3
12 Jul 22
The present invention provides a current detection circuit, semiconductor device, and a semiconductor system suitable for improving a current sensing accuracy.
Keisuke Kimura, Hideyuki Tajima, Wataru Saito
Filed: 16 Mar 20
Utility
hx0oynvpmyy9pkd3w39zc
12 Jul 22
A semiconductor device selects one start sequence of the normal start and the low-power-consumption start based on the determination result of the determination circuit.
Kazuaki Gemma
Filed: 8 Jan 20