1577 patents
Page 24 of 79
Utility
Method and System for Generating and Accessing Guard Services for Secure Services and Operations Thereof
31 Mar 22
Example implementations include generating a guard service for a secure service at a secure region of a processing system by detecting a call to a secure service at a secure region of a processing device, obtaining a secure interface associated with the secure service, generating a guard interface based at least partially on the secure interface, generating a guard service based at least partially on the guard interface, locating the guard service at a secure region, and locating the guard interface at a secure address at the secure region.
Kimberly DINSMORE, Brandon HUSSEY
Filed: 29 Sep 20
Utility
Semiconductor Device and Method of Manufacturing the Same
31 Mar 22
A semiconductor device according to one embodiment includes an IGBT having a p-type collector layer and an n-type field stop layer on a back surface of a silicon substrate.
Yoshito NAKAZAWA, Tomohiro IMAI
Filed: 18 Aug 21
Utility
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31 Mar 22
A Semiconductor device includes a semiconductor substrate, an insulating film, a first conductive film, a ferroelectric film, an insulating layer, a first plug and a second plug.
Tadashi YAMAGUCHI
Filed: 30 Sep 20
Utility
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29 Mar 22
A semiconductor system capable of reducing processing time in connection processing to a USB port is provided.
Dan Aoki
Filed: 28 Apr 20
Utility
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29 Mar 22
A failure analysis apparatus is an apparatus for analyzing a failure of a semiconductor device including a memory circuit and includes a storage device and a processor.
Toru Ogushi
Filed: 13 Nov 20
Utility
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29 Mar 22
A method of manufacturing a semiconductor device includes: providing a substrate, forming a first opening, forming a first insulating layer, forming a second opening, embedding a conductive layer, forming a protective layer, and performing CMP.
Shigeo Tokumitsu, Yoshiki Maruyama, Satoshi Iida
Filed: 12 May 20
Utility
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29 Mar 22
A semiconductor device includes a power MOS chip having a source electrode on a surface and a control chip mounted on a portion of the power MOS chip, wherein, viewing from a first outer edge of the power MOS chip extending in a first direction to the control chip, a first column bonding pad and a second column bonding pad are formed in a region of the source electrode where the control chip is not mounted, and wherein a distance between a second outer edge of the power MOS chip extending in a second direction and the first column bonding pad is longer than a distance between the second outer edge and the second column bonding pad.
Tomoaki Ota, Makoto Tanaka
Filed: 28 Oct 20
Utility
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29 Mar 22
A first amorphous film including hafnium, oxygen and a first element is formed, and a plurality of grains including a second element which differs from any of hafnium, oxygen and the first element is formed on the first amorphous film.
Tadashi Yamaguchi
Filed: 25 Jun 20
Utility
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29 Mar 22
To securely realize updating of a key shared between an apparatus on a transmission side and an apparatus on a reception side.
Tadaaki Tanimoto, Daisuke Moriyama
Filed: 10 Apr 19
Utility
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24 Mar 22
A stacked-layer body including a gate insulating film and a control gate electrode is formed in a product region and a scribe region.
Kounosuke TATEISHI, Hiroaki MIZUSHIMA
Filed: 16 Sep 21
Utility
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22 Mar 22
A semiconductor device including a multilayer wiring layer comprising a first wiring, a first insulating film formed on the multilayer wiring layer and having a first opening exposing a portion of the first wiring, a second insulating film formed on the first insulating film and having a second opening continuing with the first opening, and an inductor formed of the first wiring, and a second wiring electrically connected with the first wiring through a via formed in the first opening.
Kazuhiko Iwakiri, Akira Matsumoto
Filed: 1 Jun 20
Utility
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22 Mar 22
A semiconductor device includes first and second terminals, a reference resister being coupled between the first and second terminals, third and fourth terminals, a sensor resister being coupled between the third and fourth terminals, a first buffer which supplies a first reference voltage to the first terminal, a second buffer which supplies a second reference voltage to the fourth terminal, a reference voltage generation circuit which supplies one of first and second voltages alternately in a time division manner as the first reference voltage and supplies the other as the second reference voltage, a first analog-to-digital conversion circuit which performs analog-to-digital conversion on a signal line coupled to the third terminal, an RC filter disposed on the signal line, a noise detector which detects noise of the signal line, wherein a time constant of the RC filter is changed based on a result of the noise detector.
Ahmad H. Atriss, Masuo Okuda, Stuart N. Wooters
Filed: 6 Apr 20
Utility
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22 Mar 22
The present invention solves a new problem that may occur when Try.SRC or Try.SNK is adopted.
Dan Aoki
Filed: 8 Oct 19
Utility
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17 Mar 22
A part among a plurality of through vias formed in a non-transistor region is a floating via having a floating potential.
Yoshihiro OHARA
Filed: 7 Sep 21
Utility
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17 Mar 22
Example implementations includes a method of partitioning a non-transitory memory device by detecting a boot state of a processing device including a non-transitory memory device, identifying a startup state of the processing device based on the boot state, and partitioning the memory device into at least one secure address region, in accordance with a determination that the startup state satisfies an operating state condition.
David NOVERRAZ
Filed: 15 Sep 20
Utility
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15 Mar 22
A semiconductor device includes a plurality of first wires formed in a first layer, a plurality of second wires formed to intersect the plurality of first wires in a second layer stacked on the first layer, a plurality of first vias formed at intersections of the plurality of first wires and the plurality of second wires, and an inductor formed in a third layer stacked on the first layer and the second layer.
Shinichi Uchida
Filed: 20 Sep 19
Utility
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15 Mar 22
Fins lined up in a Y direction, a control gate electrode and a memory gate electrode each extending in the Y direction so as to straddle the fins, a plurality of first plugs electrically connected with a drain region formed in each of the fins, and a plurality of second plugs electrically connected with a source region formed in each of the fins are formed.
Yoshiyuki Kawashima
Filed: 21 Apr 20
Utility
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15 Mar 22
In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer.
Yasuhiro Okamoto, Nobuo Machida, Kenichi Hisada
Filed: 14 Dec 20
Utility
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15 Mar 22
A program is executed in an information processing device including a processor and a memory.
Tetsuji Tsuda, Teruki Fukuyama, Toshio Sunami
Filed: 1 May 19
Utility
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10 Mar 22
To provide a semiconductor device having a thin-film BOX-SOI structure and capable of realizing a high-speed operation of a logic circuit and a stable operation of a memory circuit.
Ryuta TSUCHIYA, Toshiaki IWAMATSU
Filed: 17 Nov 21