1577 patents
Page 27 of 79
Utility
Semiconductor device with a trench electrode provided inside a trench formed on an upper surface of the semiconductor substrate and method of manufacturing the same
18 Jan 22
According to an embodiment, a semiconductor device 1 includes a semiconductor substrate 50 including an upper surface, a trench electrode 22 provided inside a trench 20 formed on the upper surface, and a trench insulating film 21 provided between the trench electrode 22 and the semiconductor substrate 50.
Ryo Kanda
Filed: 23 Mar 18
Utility
Semiconductor Device and Method of Manufacturing the Same
13 Jan 22
A groove is formed between an inner peripheral edge of an opening of a pad electrode and an outer peripheral edge of a bonding region located inside the pad electrode in plan view.
Tatsuya USAMI
Filed: 13 Jul 20
Utility
Semiconductor Device Including a Circuit for Transmitting a Signal
13 Jan 22
Reliability of a semiconductor device is improved.
Toshihiko AKIBA, Kenji SAKATA, Nobuhiro KINOSHITA, Yosuke KATSURA
Filed: 27 Sep 21
Utility
Semiconductor Device and Method of Manufacturing the Same
13 Jan 22
A semiconductor device includes a semiconductor substrate, a semiconductor element, and a multilayer wiring.
Tetsuya IIDA, Yasutaka NAKASHIBA, Shinichi UCHIDA
Filed: 9 Jul 20
Utility
Measuring instrument and measuring system
11 Jan 22
A measuring device and measuring system which accurately measure a pulse wave propagation velocity.
Yasuhiro Shirai
Filed: 26 Feb 19
Utility
Semiconductor device
11 Jan 22
The data transfer has room for improvement of reduction in the operating electric current flowing on the signal bus and correct acquisition of the large amount of data.
Masahiro Yoshida, Toshihiko Funaki
Filed: 1 Oct 20
Utility
Semiconductor device, memory controller, and memory accessing method
11 Jan 22
When a plurality of write data is merged to generate a code for protecting data stored in the main memory, the write data is protected in the memory controller.
Sho Yamanaka, Nobuhiko Honda, Takahiro Irita
Filed: 15 Nov 19
Utility
Semiconductor Device, Data Generation Methods Used for the Same, and Method of Controlling the Same
6 Jan 22
A semiconductor device includes: a local memory outputting a plurality of pieces of weight data in parallel; a plurality of product-sum operation units corresponding to the plurality of pieces of weight data; and a plurality of unit selectors corresponding to the product-sum operations units, supplied with a plurality of pieces of input data in parallel, selecting the one piece of input data from the supplied plurality of pieces of input data according to a plurality of pieces of additional information each indicating a position of the input data to be calculated with the corresponding product-sum arithmetic unit calculator in the pieces of input data, and outputting the selected input data.
Taro FUJII, Katsumi TOGAWA, Teruhito TANAKA, Takao TOI
Filed: 25 Jun 21
Utility
Semiconductor Device and Method of Manufacturing the Same
6 Jan 22
A semiconductor device with an insulated-gate field-effect transistor and its manufacturing method.
Fujio SHIMIZU, Tsuyoshi KACHI, Yoshinori YOSHIDA
Filed: 15 Sep 21
Utility
Motor control system and semiconductor device
4 Jan 22
A motor control system includes a first MCU and a second MCU.
Takuro Nishikawa, Takao Koike, Shinya Abe
Filed: 9 Apr 18
Utility
Visual inspections device, method of manufacturing and program the same
4 Jan 22
The visual inspection device comprises a first illumination device capable of illuminating an top surface of an inspection object, a second illumination device capable of illuminating a bottom surface opposite to the top surface of the inspection object and a first imaging device capable of capturing the top surface of the inspection object.
Hideki Wada
Filed: 30 Apr 20
Utility
Semiconductor device and method of manufacturing the same
4 Jan 22
The first gate insulating film is an insulating film made of silicon oxide, and to which hafnium (Hf) is added without addition of aluminum (Al).
Shibun Tsuda
Filed: 26 Aug 20
Utility
Semiconductor memory device with select transistor drain region connected to memory transistor source region
4 Jan 22
A plurality of select transistors are formed in a first region of a semiconductor substrate, a plurality of memory transistors are formed in a second region of the semiconductor substrate, and a drain region of the select transistor and a source region of the memory transistor are electrically connected to form a memory cell.
Hideaki Yamakoshi
Filed: 8 Jan 20
Utility
Method for manufacturing semiconductor device having thinned fins
4 Jan 22
Provided is a stable manufacturing method for a semiconductor device.
Masaaki Shinohara
Filed: 9 Dec 19
Utility
Semiconductor device having a back electrode including Au-Sb alloy layer and method of manufacturing the same
4 Jan 22
A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved.
Yuji Takahashi, Masaki Watanabe, Masashi Sahara, Kentaro Yamada, Masaki Sakashita, Shinichi Maeda, Yoshiaki Yamada
Filed: 20 Dec 19
Utility
Drive device, power supply system, and method of testing drive device
4 Jan 22
A drive device comprises a sensor for detecting a state of stress applied to a power transistor, a threshold voltage setting circuit for outputting a threshold voltage, an anomaly monitor circuit for determining whether or not a state of stress is abnormal by comparing a detected voltage of the sensor with the threshold voltage, and a control circuit for fixing the power transistor to either on or off when the state of stress is determined to be abnormal by the anomaly monitor circuit.
Shunichi Kaeriyama
Filed: 6 Apr 20
Utility
Power Line Communication Device
30 Dec 21
The power line communication device detects inverter noise from the voltage waveforms of the power line, and executes the output of the transmission signal in a period in which it is determined that the signal amplitude of the transmission signal in the transmission processing unit exceeds a predetermined value from the output amplitude of the inverter noise, and stops the output of the transmission signal in other periods.
Kosuke SHIBUYA, Yoshitaka SHIBUYA
Filed: 14 Sep 21
Utility
Time Series Sensor Data Processing Device and Time Series Sensor Data Processing Methods
30 Dec 21
A time series sensor data processing device is provided.
Masayuki SHIMOBEPPU
Filed: 7 May 21
Utility
Airbag control device and semiconductor device
28 Dec 21
An ECU includes a boosting circuit that boosts an input power supply voltage, a backup capacitor that charges a backup power supply in accordance with a boosted voltage boosted by the boosting circuit, an airbag ignition circuit that drives an airbag with the backup power supply charged by the backup capacitor as a driving power supply, and a bidirectional current limiting unit that limits a charging current flowing from the boosting circuit to the backup capacitor and limits a backflow current flowing from the backup capacitor to the boosting circuit.
Yutaka Hayashi
Filed: 8 Nov 17
Utility
Semiconductor device and method for controlling semiconductor device
28 Dec 21
To provide a semiconductor device having a thin-film BOX-SOI structure and capable of realizing a high-speed operation of a logic circuit and a stable operation of a memory circuit.
Ryuta Tsuchiya, Toshiaki Iwamatsu
Filed: 30 Aug 16