1577 patents
Page 16 of 79
Utility
Semiconductor Device
22 Dec 22
A semiconductor device which is a processor includes a plurality of first power supply regions in each of which a functional module having a predetermined function is arranged and to which a power supply voltage is individually supplied, a setting unit configured to specify an order of supplying the power supply voltage in the plurality of first power supply regions, and a power controller configured to supply the power supply voltage to the plurality of first power supply regions in accordance with the order specified by the setting unit.
Takayoshi SHIRAISHI, Tomohiro KATAYAMA
Filed: 6 May 22
Utility
Semiconductor Device
22 Dec 22
A wiring substrate includes: a first insulating layer; a first metal pattern formed on the first insulating layer; a second insulating layer formed on the first insulating layer so as to cover the first metal pattern; a second metal pattern formed on the second insulating layer; and an organic insulating film contacted with a portion of the second metal pattern.
Nobuhiro KINOSHITA, Shuuichi KARIYAZAKI, Keita TSUCHIYA
Filed: 18 Apr 22
Utility
q4w17cwso5y24nfv55d5ztmb0ndpwvlon74uo8a3ufv7knizx4
22 Dec 22
In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.
Kazuya UEJIMA, Michio ONDA, Takashi HASE, Tatsuo NISHINO, Shiro KAMOHARA
Filed: 29 Aug 22
Utility
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22 Dec 22
A semiconductor device includes a first transistor that flows a current to a load, a current generation circuit that outputs a current corresponding to a power consumption of the first transistor, a temperature sensor, a resistor-capacitor network coupled between the current generation circuit and the temperature sensor and an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor network, wherein the resistor-capacitor network comprises a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance between the first transistor and the temperature sensor.
Hiroki NAGATOMI, Makoto TANAKA
Filed: 16 Jun 21
Utility
eyokpsqses1jpbtbl5nrivupii60w5ylhyx5ietc5zjz4sqy85hrti
22 Dec 22
A technique capable of improving linearity at a low illuminance is provided.
Norihito KATOU, Fukashi MORISHITA
Filed: 15 Jun 22
Utility
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20 Dec 22
A semiconductor device has a timer unit and a processing unit.
Kiyoshi Hayase, Shinichi Shibahara, Yuki Hayakawa, Yoichi Yuyama
Filed: 5 Oct 21
Utility
oi4i2beef9erocr3s8j01sel73qy50iv3up6w2vo5job1
15 Dec 22
A semiconductor device executes the processing of a neural network.
Kazuaki TERASHIMA, Isao NAGAYOSHI, Atsushi NAKAMURA
Filed: 11 Jun 21
Utility
mn6n315kxenb64ul6gwnp1f5kkg3v9gez0lh3s0mam2pp0
15 Dec 22
A method for manufacturing a semiconductor device includes forming semiconductor devices from a semiconductor wafer and identifying a position of the semiconductor device in the semiconductor wafer, wherein the forming the semiconductor devices includes forming a first repeating pattern including i semiconductor devices each having a unique pattern, forming a second repeating pattern including j semiconductor devices each having a unique pattern, defining semiconductor devices on the semiconductor wafer such that each of the k semiconductor devices has a unique pattern based on the first and second repeating patterns, and grinding a backside of the semiconductor wafer, wherein each unique pattern of the k semiconductor devices is composed of a combination of the unique patterns of the first and second repeating patterns, wherein the position of the semiconductor device is identified based on the unique patterns of the first and second repeating patterns and an angle of a grinding mark.
Takehiro UEDA
Filed: 11 Jun 21
Utility
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13 Dec 22
In the conventional semiconductor device, it is impossible for two CPUs to operate memories to be debugged at synchronous timings.
Shinichi Suzaki, Toshihiro Kawano
Filed: 31 Dec 19
Utility
mljoo6vnbek7u46bz45lbo3l91qv61jz2swerb4te
13 Dec 22
A semiconductor device that can reduce power consumption while improving the accuracy of learning and inference is provided.
Makoto Yabuuchi
Filed: 5 Feb 20
Utility
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13 Dec 22
To provide a memory protection circuit and a memory protection method suitable for quick data transfer between a plurality of virtual machines via a common memory, according to an embodiment, a memory protection circuit includes a first ID storing register that stores therein an ID of any of a plurality of virtual machines managed by a hypervisor, an access determination circuit that permits the virtual machine having the ID stored in the first ID storing register to access a memory, a second ID storing register that stores therein an ID of any of the virtual machines, and an ID update control circuit that permits the virtual machine having the ID stored in the second ID storing register to rewrite the ID stored in the first ID storing register.
Takashi Ichikawa
Filed: 12 Aug 21
Utility
thtxqzm0a5i0fulblyfi6i2m0vvzdydu86oc
13 Dec 22
The present invention relates to a semiconductor device having a first processor element configured to receive a first interrupt request signal, a second processor element configured to receive a second interrupt request signal, a first priority determination circuit configured to receive a plurality of interrupt signals and to output the first interrupt request signal to the first processor element, a second priority determination circuit configured to receive the plurality of interrupt signals and to output the second interrupt request signal to the second processor element, a checker circuit configured detect failures of the first priority determination circuit and the second priority determination circuit, and a control circuit configured to select one of the first priority determination circuit or the second priority determination circuit as a circuit to be checked.
Taro Kawao
Filed: 7 Oct 20
Utility
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13 Dec 22
A microcontroller includes a CPU and a cryptographic circuit, and when a first program uses the cryptographic circuit, the second program transmits installation information of the first program and encrypted program installation information to the cryptographic circuit.
Seishiro Nagano
Filed: 13 Nov 19
Utility
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13 Dec 22
A gate electrode is formed on a semiconductor substrate between an n-type source region and an n-type drain region via a first insulating film.
Yotaro Goto, Katsumi Eikyu, Yoshihiro Nomura
Filed: 10 May 21
Utility
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13 Dec 22
Fukashi Morishita
Filed: 2 Dec 21
Utility
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8 Dec 22
A semiconductor device capable of shortening a time required for data transfer and data organizing is provided.
Yasushi MURASE
Filed: 17 May 22
Utility
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8 Dec 22
In order to reduce on-resistance in a semiconductor device to be used for high current applications, the semiconductor device includes a source terminal lead located between a gate terminal lead and a Kelvin terminal lead in plan view and electrically connected with a source terminal via a plurality of wires.
Noriko OKUNISHI, Toshiyuki HATA
Filed: 11 Apr 22
Utility
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8 Dec 22
In semiconductor device, a field plate portion having a high concentration p-type semiconductor region, a low concentration p-type semiconductor region having a lower impurity concentration than the high concentration p-type semiconductor region and a high concentration n-type semiconductor region is provided.
Makoto KOSHIMIZU, Yasutaka NAKASHIBA
Filed: 18 Apr 22
Utility
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6 Dec 22
A semiconductor device includes a transmission control unit which performs transmission processing, an area determination unit which determines whether an own vehicle is located in an intersection area, and an operation mode determination unit which determines either a control mode or a terminal mode as an operation mode of a radio terminal device based on an identification information for identifying a source of a received communication frame, and a determination result by the area determination unit.
Hiroshi Chano, Suguru Fujita
Filed: 12 Mar 20
Utility
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1 Dec 22
Performance of a semiconductor device is improved.
Kazuyuki OMORI, Seiji MURANAKA, Kazuyoshi MAEKAWA
Filed: 12 Aug 22