1577 patents
Page 7 of 79
Utility
Semiconductor device
12 Sep 23
A semiconductor device capable of decreasing a jitter component is provided.
Norihiro Saitou
Filed: 3 Nov 21
Utility
Semiconductor device
12 Sep 23
A semiconductor device includes: a first substrate; a multilayer wiring layer formed on the first substrate; a first inductor formed into a meander shape on the multilayer wiring layer in a plan view; and a second inductor formed into a meander shape on the multilayer wiring layer in a plain view, and arranged so as to be close to the first inductor in a plan view and not to overlap with the first inductor.
Shinichi Uchida, Yasutaka Nakashiba, Shinichi Kuwabara
Filed: 15 Apr 21
Utility
Method of Manufacturing Semiconductor Device
7 Sep 23
On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed in the bulk silicon region.
Takaaki TSUNOMURA, Yoshiki YAMAMOTO, Masaaki SHINOHARA, Toshiaki IWAMATSU, Hidekazu ODA
Filed: 15 May 23
Utility
Semiconductor Device
7 Sep 23
In the semiconductor device according to an embodiment, a memory cell is controlled such that, for the part whose output value can be fixed based on the value stored in the memory cell without performing the information processing, the operation processing is stopped so as to stop the charging and discharging to and from the data line, and for the part whose output value needs to be fixed by performing the information processing, the information processing accompanied by charging and discharging to and from the data line is appropriately performed.
Shinji TANAKA, Daiki KITAGATA
Filed: 15 Feb 23
Utility
Semiconductor Device and Method of Manufacturing the Same
7 Sep 23
A semiconductor device includes an insulating layer(IFL) on a semiconductor substrate(SUB), a conductive film (PL) on the insulating layer(IFL), an interlayer insulating film(IL) covering the conductive film(PL), a contact hole(CH1) in the interlayer insulating film(IL), the conductive film(PL) and the insulating layer (IFL), and a plug(PG1) embedded in the contact hole(CH1).
Shotaro KUDO
Filed: 5 Dec 22
Utility
Semiconductor Device and Method of Manufacturing the Same
7 Sep 23
Semiconductor device includes a well region formed in an active region of a semiconductor substrate, a gate electrode formed on the well region via a gate dielectric film, and a source region and a drain region formed in the well region.
Hideki SUGIYAMA
Filed: 3 Mar 22
Utility
Semiconductor device
5 Sep 23
A semiconductor device includes clock adjustment circuits, provided to a plurality of functional circuits operating in synchronization with a clock signal respectively for adjusting a delay amount for each functional circuit, and a clock path selection circuit for controlling whether a clock is transmitted to the functional circuits through any one of a plurality of paths included in the clock adjustment circuits respectively.
Daisuke Wakasa, Kazuaki Gemma
Filed: 10 Dec 21
Utility
Semiconductor device
5 Sep 23
A semiconductor device comprises a wiring substrate and a semiconductor chip.
Ryuichi Oikawa
Filed: 12 Oct 20
Utility
Over-temperature protection circuit
5 Sep 23
An over-temperature protection circuit is described.
Hans-Juergen Braun
Filed: 23 Jan 18
Utility
Semiconductor device and decoding methods
5 Sep 23
The present invention is to reduce detection of an erroneous edge caused by variation in a case of a sampling frequency that is not larger than a data transmission frequency.
Koichi Ishimi, Akio Fujii
Filed: 13 May 21
Utility
Semiconductor Device and Circuit Device
31 Aug 23
A semiconductor device includes a first semiconductor chip including a first MOSFET of n-type and a first parasitic diode and a second semiconductor chip including a second MOSFET of n-type and a second parasitic diode.
Hiroshi YANAGIGAWA, Yasutaka NAKASHIBA, Toshiyuki HATA
Filed: 29 Nov 22
Utility
Semiconductor Device
31 Aug 23
A semiconductor device capable of suppressing formation of nodules on an upper surface of an electroless plating film will be provided.
Teruhiro KUWAJIMA
Filed: 23 Nov 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
31 Aug 23
An insulating film is formed on a main surface of a semiconductor substrate constituting a semiconductor device so as to cover a field plate portion, a metal pattern thicker than the field plate portion is formed on the insulating film, and a protective film is formed on the insulating film so as to cover the metal pattern.
Toshiaki IGARASHI, Sho NAKANISHI, Tomoaki UNO, Koshiro YANAI, Masanari MURAYAMA
Filed: 7 Dec 22
Utility
Semiconductor Device and Method of Manufacturing the Same
31 Aug 23
To improve a reliability of a nonvolatile memory cell including a ferroelectric film.
Yoshiyuki KAWASHIMA
Filed: 29 Nov 22
Utility
Method and system for generating and accessing guard services for secure services and operations thereof
22 Aug 23
Example implementations include generating a guard service for a secure service at a secure region of a processing system by detecting a call to a secure service at a secure region of a processing device, obtaining a secure interface associated with the secure service, generating a guard interface based at least partially on the secure interface, generating a guard service based at least partially on the guard interface, locating the guard service at a secure region, and locating the guard interface at a secure address at the secure region.
Kimberly Dinsmore, Brandon Hussey
Filed: 29 Sep 20
Utility
Semiconductor Device and Impedance-matching Circuitry
17 Aug 23
A semiconductor device includes: a first terminal connected to an antenna; a second terminal connected to an input terminal of a receiving circuitry; a third terminal connected to an output terminal of a transmitting circuitry; a first inductor arranged in a signal path extending from the first terminal to the second terminal; and a second inductor arranged in a signal path extending from the first terminal to the third terminal, and the first inductor and the second inductor are formed so as to have at least a partial overlapping portion in plan view.
Kyoya Takegawa, Kenichi Shibata, Hiroaki Matsui
Filed: 16 Feb 23
Utility
Data processing device and data processing method
15 Aug 23
In a data processing device comprising a memory controller controlling writing/reading of data to/from the memory, a processor requesting writing/reading of data, and an error detection module requesting writing/reading of data to/from the memory controller in accordance with a request from the processor, an error detection module calculates a first error detection code of the first data having a write request from the processor, reads the second data having a read request from the processor from the memory, calculates a second error detection code from the read data, compares the first error detection code and the second error detection code, and transmits the result of the comparison to the external module.
Katsushige Matsubara, Ryoji Hashimoto, Takahiro Irita, Kenichi Shimada, Tetsuya Shibayama
Filed: 17 Mar 20
Utility
Semiconductor Device and Method of Manufacturing the Same
10 Aug 23
A semiconductor device includes: a semiconductor substrate; an insulating layer formed on the semiconductor substrate; an optical waveguide formed on the insulating layer, extending in a first direction in a plan view, and being made of silicon; and an interlayer insulating film formed on the insulating layer to cover the optical waveguide.
Yasutaka NAKASHIBA, Shinichi WATANUKI
Filed: 8 Feb 22
Utility
High-frequency Signal Processing Circuitry and Wireless Communication Device
10 Aug 23
A circuitry includes a first to fourth waveform synthesizers, each waveform synthesizer includes a first terminal and a second terminal to which input signals are input and a third terminal from which an output signal obtained by synthesizing the input signals is output.
Kenichi SHIBATA
Filed: 7 Feb 23
Utility
Semiconductor Device
10 Aug 23
A semiconductor device includes a first power semiconductor device, a first Nch MOSFET whose drain is coupled to a gate of the first power semiconductor device, a first gate resistor coupled to a source of the first Nch MOSFET and a first diode coupled between the source and drain of the first Nch MOSFET.
Yusuke OJIMA
Filed: 10 Feb 22