1577 patents
Page 6 of 79
Utility
Semiconductor Device
12 Oct 23
A sense MOSFET is formed at a position surrounded by a main MOSFET and a source pad connected to a source region of the main MOSFET in plan view.
Hiroya SHIMOYAMA
Filed: 16 Feb 23
Utility
Semiconductor Device and Input Signal Controlling Method
12 Oct 23
To reduce the deterioration of the input circuit hysteresis characteristics even when the input noise occurs.
Wataru ISHIJIMA
Filed: 11 Apr 22
Utility
Semiconductor device including a circuit for transmitting a signal
10 Oct 23
Reliability of a semiconductor device is improved.
Toshihiko Akiba, Kenji Sakata, Nobuhiro Kinoshita, Yosuke Katsura
Filed: 27 Sep 21
Utility
Semiconductor Device
5 Oct 23
A semiconductor device includes a first transistor that flows a load current to an external load; a current generation circuit that outputs a current corresponding to a power consumption generated in an overheat detection target when the load current flows the overheat detection target; a resistor-capacitor-network comprising a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance of the overheat detection target, and having one end coupled to the current generation circuit; an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor-network; and a voltage source that sets a voltage of the connection point of the current generation circuit and the resistor-capacitor-network to a predetermined voltage.
Hiroki NAGATOMI, Makoto TANAKA
Filed: 30 Mar 22
Utility
Semiconductor Device
5 Oct 23
A semiconductor device includes a first data line, a second data line, and a memory cell connected to the first data line and the second data line.
Daiki KITAGATA, Shinji TANAKA
Filed: 15 Feb 23
Utility
Memory protection circuit and memory protection method
3 Oct 23
To provide a memory protection circuit and a memory protection method suitable for quick data transfer between a plurality of virtual machines via a common memory, according to an embodiment, a memory protection circuit includes a first ID storing register that stores therein an ID of any of a plurality of virtual machines managed by a hypervisor, an access determination circuit that permits the virtual machine having the ID stored in the first ID storing register to access a memory, a second ID storing register that stores therein an ID of any of the virtual machines, and an ID update control circuit that permits the virtual machine having the ID stored in the second ID storing register to rewrite the ID stored in the first ID storing register.
Takashi Ichikawa
Filed: 15 Nov 22
Utility
Semiconductor device
3 Oct 23
A semiconductor device includes a semiconductor substrate having first and second surfaces, an insulated gate bipolar transistor (IGBT) and a diode formed on the semiconductor substrate, wherein the diode comprises a drift layer of a first conductivity type formed so as to have a first region on the first surface of the semiconductor substrate, a first body layer of a second conductivity type formed so as to have a second region adjacent to the first region at an upper portion of the drift layer, a first floating layer of the second conductivity type formed so as to have a third region adjacent to the first region at an upper portion of the drift layer, a first trench electrode formed in a region adjacent to the first floating layer at an upper portion of the drift layer, and a first control gate formed on top of the first region.
Nao Nagata
Filed: 15 Apr 21
Utility
Data Transfer Device and Data Transfer Method
21 Sep 23
A data transfer device that divides and transfers the transfer target data in a burst manner from a transmission-side device to a reception-side device includes a storage device and a control device that controls the storage device to store one piece of the input transfer target data, controls the storage device so that data transfer is performed at a set burst length as a data length of divided data when the one piece of the data is divided by a division number until a last part of the data is sensed, and when the last part of the data is sensed, controls the storage device to adjust the burst length so that a data length of the data coincides with a total of data lengths of data to be transferred, and to transfer the data at the adjusted burst length.
Motoshige IKEDA, Yuuji INAE
Filed: 2 Feb 23
Utility
Method of Manufacturing Semiconductor Device
21 Sep 23
After a plurality of trenches is formed in an SOI substrate, a side surface of the insulating layer is retreated from a side surface of the semiconductor layer and a side surface of the semiconductor substrate.
Shibun TSUDA
Filed: 17 Mar 22
Utility
Semiconductor Device and Method of Manufacturing the Same
21 Sep 23
Disclosed is a technique for improving performance of a semiconductor device having a trench gate type power MOSFET.
Yuto OMIZU, Yuya ABIKO
Filed: 5 Dec 22
Utility
Semiconductor Device
21 Sep 23
A semiconductor device is provided with an SOI substrate which includes a semiconductor substrate, a ferroelectric layer and a semiconductor layer, and has a first region in which a first MISFET is formed.
Eiji TSUKUDA, Tohru KAWAI, Atsushi AMO
Filed: 17 Mar 22
Utility
Semiconductor Device
21 Sep 23
A semiconductor device capable of preventing a sharp variation in current consumption in neural network processing is provided.
Kazuaki TERASHIMA, Atsushi NAKAMURA, Rajesh GHIMIRE
Filed: 10 Jan 23
Utility
Abnormal power supply voltage detection device and method for detecting abnormal power supply voltage
19 Sep 23
The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip.
Tadashi Kameyama, Masanori Ikeda, Masataka Minami, Kenichi Shimada, Yukitoshi Tsuboi
Filed: 22 Dec 21
Utility
Semiconductor device and method of manufacturing the same
19 Sep 23
A Semiconductor device includes an insulating layer, an optical waveguide, a first dummy semiconductor film, a second semiconductor film and a third semiconductor film.
Shotaro Kudo, Shinichi Watanuki, Takashi Ogura
Filed: 17 Nov 20
Utility
Semiconductor device and image processing system for processing regions of interest images
19 Sep 23
The semiconductor device includes an image signal processor, a scaler, and an ROI (Region of Interest) controller.
Kazuaki Terashima, Isao Nagayoshi, Atsushi Nakamura
Filed: 19 Nov 21
Utility
USB DRP controller, control method, and control program
19 Sep 23
Controllers are provided for providing ports corresponding to Dual Role Powers (DRPs), which may be both the feed side and the receive side, in accordance with the USB Type-C and/or USB Power Delivery standards.
Norio Kayama
Filed: 9 May 19
Utility
Semiconductor Device
14 Sep 23
The semiconductor device 10 receives an input signal given from the signal generating unit provided externally by a plurality of receiving units, a receiving unit 12, 13 for generating a plurality of received signals from the received input signal, a plurality of received signals by comparing, an error determination unit 14 for outputting an error notification to the upper system in response to the error between the channels that occurs between the received signals becomes equal to or greater than the threshold value, the threshold count value is stored and a threshold count register 17, the error determination unit 14 waits for the departure of the error notification until the period specified by the threshold count value has elapsed.
Takuro NISHIKAWA
Filed: 5 Dec 22
Utility
Semiconductor Device and Method of Manufacturing the Same
14 Sep 23
A semiconductor substrate has a first surface, a second surface opposing the first surface, and a trench extending from the second surface toward the first surface.
Taro MORIYA
Filed: 13 Dec 22
Utility
Semiconductor Device
14 Sep 23
A performance of a semiconductor device including a main MOSFET and a sensing MOSFET having a double-gate structure including a gate electrode and a field plate electrode inside a trench is improved.
Seiji HIRABAYASHI, Yusuke OJIMA
Filed: 13 Dec 22
Utility
Semiconductor Device and Circuit Device
14 Sep 23
Performance of a semiconductor device is enhanced.
Kazuhisa MORI, Toshiyuki HATA
Filed: 29 Nov 22