1577 patents
Page 61 of 79
Utility
Battery voltage monitoring apparatus
11 May 20
A battery voltage monitoring apparatus monitoring a voltage of an assembled battery, the assembled battery including a plurality of battery cells, comprising; a first voltage sensor module that monitors voltages of a plurality of battery cells arranged at a high voltage side; and a second voltage sensor module that monitors voltages of a plurality of battery cells arranged at a low voltage side, wherein the second voltage sensor module comprises a voltage sensor that is connected to a terminal and detects a voltage of a battery cell connected to the terminal, the terminal being supplied with a power source potential of the second voltage sensor module, the voltage sensor comprises a comparator including a first terminal and a second terminal, the first terminal being supplied with a voltage according to the voltage of the battery cell, the second terminal being supplied with a reference voltage.
Manabu Miyamoto
Filed: 14 Apr 16
Utility
Inspection system, inspection device, and inspection method
11 May 20
It is determined whether an arithmetic operation function of a device to be inspected is normal or not.
Seiichi Kousokabe
Filed: 19 Feb 18
Utility
Semiconductor device
11 May 20
A semiconductor device capable of reducing in size thereof and suppressing degradation in the characteristics of circuit components is provided.
Hironori Asano, Noriaki Matsuno
Filed: 28 Aug 18
Utility
Semiconductor device
11 May 20
In a semiconductor device, memory modules each having a low power consumption mode that is enabled and disabled by a control signal belong to a memory block.
Takashi Yamaki
Filed: 13 Nov 18
Utility
Semiconductor device and method of manufacturing same
11 May 20
To provide a semiconductor device having improved reliability.
Hideki Aono, Tetsuya Yoshida, Makoto Ogasawara, Shinichi Okamoto
Filed: 3 Mar 19
Utility
Semiconductor device and a manufacturing method thereof
11 May 20
In a MONOS memory having an ONO film, dielectric breakdown and a short circuit are prevented from occurring between the end of the lower surface of a control gate electrode over the ONO film and a semiconductor substrate under the ONO film.
Hideaki Yamakoshi, Takashi Hashimoto, Shinichiro Abe, Yuto Omizu
Filed: 23 Jul 19
Utility
Semiconductor device and method of manufacturing the same
11 May 20
In a vertical power MOSFET having a superjunction structure, the withstand voltage of the power MOSFET can be ensured even if the aspect ratios of an n-type column region and a p-type column region are increased so as to vary the impurity concentration of the p-type column region.
Yuya Abiko, Natsuo Yamaguchi, Satoshi Eguchi
Filed: 10 Mar 19
Utility
Semiconductor device and method of manufacturing the same
11 May 20
In one embodiment, a semiconductor device includes a semiconductor substrate having an upper surface, a trench electrode placed inside a trench formed on the upper surface, and a trench insulating film placed between the trench electrode and the semiconductor substrate, and the semiconductor substrate includes a drift layer, a floating layer for electric field reduction, a hole barrier layer, a body layer and an emitter layer, and the emitter layer, the body layer and the hole barrier layer are separated from the drift layer by the floating layer for electric field reduction, and a path of a carrier passing through an inverted layer formed in the body layer includes the body layer, the hole barrier layer, a non-inverted region of the floating layer for electric field reduction, and the drift layer.
Ryo Kanda, Hitoshi Matsuura
Filed: 14 May 18
Utility
Semiconductor Device, Semiconductor Systems and Test-control Methods
6 May 20
A semiconductor device capable of executing fault injection test on a plurality of failure detection mechanism in a short time is provided.
Kazuo KATO, Hiroshi MORITA
Filed: 18 Sep 19
Utility
Semiconductor Device, Semiconductor System and Program
6 May 20
A semiconductor device and the like for maintaining a required function while suppressing unauthorized accesses are provided.
Kazuki ONDA, Masamitsu MURATANI, Hiroshi YAGI
Filed: 19 Sep 19
Utility
Semiconductor Device and Data Retention Method
6 May 20
A semiconductor device has a first memory circuit comprising a first memory cell comprising a first field effect transistor, a second memory circuit comprising a second memory cell comprising a second field effect transistor, and a regulator for converting the first power supply potential to a second voltage value lower than the voltage value of the first power supply potential.
Daisuke NAKAMURA, Yoshisato YOKOYAMA
Filed: 19 Sep 19
Utility
Method of Manufacturing Semiconductor Module and Semiconductor Module
6 May 20
Reliability of a semiconductor module is improved.
Kuniharu MUTO, Koji BANDO
Filed: 6 Jan 20
Utility
Method for Manufacturing a Semiconductor Device
6 May 20
After a die bonding step, a wire bonding step is performed to electrically connect the plurality of pad electrodes and the plurality of leads of the semiconductor chip via a plurality of copper wires.
Yasuhiko AKAIKE
Filed: 26 Sep 19
Utility
Semiconductor Device
6 May 20
By changing the characteristic impedance of the transmission line depending on the location, the transmission line functions as a band-pass filter.
Ryuichi OIKAWA
Filed: 6 Oct 19
Utility
Semiconductor device with semiconductor chips of different sizes and manufacturing method threreof
4 May 20
An improvement is achieved in the reliability of a semiconductor device.
Tadatoshi Danno, Atsushi Nishikizawa, Hiroyuki Nakamura
Filed: 29 Nov 17
Utility
High speed semiconductor device with noise reduction wiring pattern
4 May 20
A semiconductor device has a wiring substrate on which a semiconductor chip is mounted.
Shuuichi Kariyazaki, Keita Tsuchiya, Yoshitaka Okayasu, Wataru Shiroi
Filed: 6 Aug 18
Utility
Semiconductor device
4 May 20
A semiconductor device includes a semiconductor chip including a first circuit and a wiring substrate over which the semiconductor chip is mounted.
Shuuichi Kariyazaki, Wataru Shiroi, Shinji Katayama, Keita Tsuchiya
Filed: 14 Nov 18
Utility
Semiconductor memory device
4 May 20
To provide a semiconductor memory device fast in address access time.
Koji Nii, Makoto Yabuuchi
Filed: 31 Oct 18
Utility
Semiconductor device and manufacturing method therefor
4 May 20
On the upper surface of a fin projecting from the upper surface of a semiconductor substrate, there are formed a control gate electrode through a gate insulating film and a memory gate electrode through a gate insulating film.
Tomohiro Yamashita
Filed: 15 Jul 18
Utility
Level shift circuit
4 May 20
A level shift circuit includes a pulse signal generation unit generating first and second pulse signals with respect to an input signal, a first level conversion unit converting the first pulse signal at a first voltage to a third pulse signal at a second voltage, a second level conversion unit converting the second pulse signal at the first voltage to a fourth pulse signal at the second voltage, and a flip flop circuit making an output signal at the second voltage rise according to the third pulse signal, and making the output signal at the second voltage fall according to the fourth pulse signal.
Koichi Takeda
Filed: 15 Jan 19