1577 patents
Page 58 of 79
Utility
Semiconductor Device and Method of Manufacturing the Same
24 Jun 20
Reliability of a semiconductor device having a plated layer formed on an electrode pad is improved.
Takashi TONEGAWA
Filed: 17 Nov 19
Utility
Control Circuit, Electric Driving System, Inverter System and Method for Controlling Thereof
24 Jun 20
The temperature of inverters and power semiconductor devices is detected at high speed and with high accuracy.
Ryutaro MINESAWA, Chengzhe LI
Filed: 12 Nov 19
Utility
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22 Jun 20
A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode.
Tsutomu Okazaki, Akira Kato, Kan Yasui, Kyoya Nitta, Digh Hisamoto, Yasushi Ishii, Daisuke Okada, Toshihiro Tanaka, Toshikazu Matsui
Filed: 26 Aug 19
Utility
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22 Jun 20
To surely detect a back electromotive force generated in a non-conduction phase at an extremely low duty ratio, a motor driving system includes a three-phase motor, an inverter circuit, and a semiconductor device.
Satoshi Narumi
Filed: 29 Oct 18
Utility
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22 Jun 20
Increases of circuit scale and power consumption are suppressed while frequency deviation is kept within a predetermined allowable range.
Yuichi Maruyama, Noriaki Matsuno
Filed: 10 Apr 18
Utility
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17 Jun 20
A semiconductor device includes an operation resource which performs a plurality of ECU functions, a peripheral resource which is shared by the plurality of ECU functions and a control mechanism which controls a period in which one of the ECU functions uses the peripheral resource.
Masayuki DAITO
Filed: 5 Nov 19
Utility
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17 Jun 20
A semiconductor device includes a substrate having a first surface and a second surface that have top and back relation, an insulating layer formed on the first surface of the substrate, and an optical waveguide formed on the insulating layer and formed of a semiconducting layer.
Yasutaka NAKASHIBA, Shinichi WATANUKI, Tohru KAWAI
Filed: 11 Nov 19
Utility
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17 Jun 20
A microcontroller includes a CPU and a cryptographic circuit, and when a first program uses the cryptographic circuit, the second program transmits installation information of the first program and encrypted program installation information to the cryptographic circuit.
Seishiro NAGANO
Filed: 12 Nov 19
Utility
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17 Jun 20
A semiconductor substrate is easily warped by the shrink of the insulating film formed within the deep trench according to the thermal processing in the super junction structure.
Yoshinori YOSHIDA, Tsuyoshi KACHI
Filed: 24 Feb 20
Utility
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17 Jun 20
The present invention provides a semiconductor device having an integration type A/D converter capable of speeding up.
Yoichi IIZUKA, Fukashi MORISHITA
Filed: 29 Oct 19
Utility
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17 Jun 20
A video encoding device includes a local decode generation unit for generating a reference image based on a result of encoding of a divided image, a compression unit for compressing the reference image to generate a compressed data, a reference image storage determination unit for determining whether to store the compressed data in a memory, and an inter-prediction unit for performing motion vector search for inter-coding based on a reference image stored in the memory.
Maiki HOSOKAWA, Toshiyuki KAYA, Tetsuya SHIBAYAMA, Seiji MOCHIZUKI, Tomohiro UNE, Kazushi AKIE
Filed: 23 Oct 19
Utility
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10 Jun 20
A photographing control device capable of storing images to be stored at appropriate timings is provided.
Takehito BABA
Filed: 16 Oct 19
Utility
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10 Jun 20
Even when a driven circuit has a large-scale load, a small-scale step-down driver circuit can supply an internal potential to the driven circuit at high speed.
Hiroyuki TAKAHASHI, Muneaki MATSUSHIGE
Filed: 18 Feb 20
Utility
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10 Jun 20
The reliability of semiconductor device is improved.
Ryo Hayashi, Yasuhiko Akaike
Filed: 15 Oct 19
Utility
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10 Jun 20
When a memory cell is formed over a first fin and a low breakdown voltage transistor is formed over a second fin, the depth of a first trench for dividing the first fins in a memory cell region is made larger than that of a second trench for dividing the second fins in a logic region.
Shibun TSUDA, Tomohiro YAMASHITA
Filed: 9 Feb 20
Utility
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10 Jun 20
A semiconductor device and a method of manufacturing a semiconductor device capable of suppressing breakdown due to current concentration while suppressing an increase in chip size are provided.
Nao NAGATA
Filed: 16 Oct 19
Utility
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10 Jun 20
A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region.
Akihiro SHIMIZU, Nagatoshi OOKI, Yusuke NONAKA, Katsuhiko ICHINOSE
Filed: 17 Feb 20
Utility
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10 Jun 20
The present invention provides both a margin of a discharge start voltage with respect to a power supply voltage and a margin of a clamp voltage with respect to a breakdown withstand voltage of an internal circuit.
Koki NARITA
Filed: 15 Oct 19
Utility
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8 Jun 20
A logic BIST circuits concurrently execute a first scan test for a scan chain as a target and a second scan test for a scan chain as a target, when they are set to a an LBIST mode, and execute the first scan test without executing the second scan test, when they are set to a simultaneous test mode.
Iwao Suzuki, Naoki Kato
Filed: 16 Apr 18
Utility
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8 Jun 20
An abnormality detection apparatus includes a feature extraction unit configured to extract an image feature according to a common algorithm, a flow calculation unit, a first abnormality detection unit, and a second abnormality detection unit.
Yuki Kajiwara, Kosuke Miyagawa, Masaki Nishibu, Kentaro Sasahara
Filed: 8 May 18