1577 patents
Page 60 of 79
Utility
Semiconductor device with an interconnection layer and method of manufacturing the same
25 May 20
Performance of a semiconductor device is improved.
Kazuyuki Omori, Seiji Muranaka, Kazuyoshi Maekawa
Filed: 3 Oct 19
Utility
Driving circuit, semiconductor device including the same, and control method of the driving circuit
25 May 20
According to an embodiment, a word line driver includes: a first inverter that is driven by a first power supply voltage and inverts and outputs a decode signal; a second inverter that is driven by a second power supply voltage and inverts and outputs the decode signal; a first PMOS transistor that is controlled to be turned on or off on the basis of an output signal of the second inverter; a first NMOS transistor that is controlled to be turned on or off on the basis of an output signal of the first inverter; and a second PMOS transistor that is provided between a power supply voltage terminal to which the second power supply voltage is supplied and the gate of the first PMOS transistor and is temporarily turned on in synchronization with falling of the decode signal.
Koichi Takeda, Takashi Iwase
Filed: 2 Oct 18
Utility
Control System, Semiconductor Device and Method of the Semiconductor Device
20 May 20
The control system according to embodiments includes a switching element, a control unit controlling the conductive state of the switching element, and a first capacitor storing charge supplied to the control unit.
Shinichi KUWABARA, Yasutaka NAKASHIBA, Tetsuya IIDA
Filed: 9 Oct 19
Utility
Data Processing Device
20 May 20
A data processing device has an instruction decoder, a control logic unit, and ALU.
Sugako OHTANI, Hiroyuki KONDO
Filed: 20 Jan 20
Utility
Semiconductor Device and Method of Manufacturing the Same
20 May 20
An n-type epitaxial layer is formed on an n-type semiconductor substrate made of silicon carbide. p-type body regions are formed in the epitaxial layer, and n-type source region is formed in the body region.
Hironobu MIYAMOTO, Yasuhiro OKAMOTO, Kenichi HISADA, Koichi ARAI, Nobuo MACHIDA
Filed: 8 Oct 19
Utility
Semiconductor Module and Method of Manufacturing the Same, and Method of Communication Using the Same
20 May 20
The semiconductor module includes a semiconductor chip and a semiconductor chip.
Tetsuya IIDA, Yasutaka NAKASHIBA
Filed: 9 Oct 19
Utility
Semiconductor Device
20 May 20
In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer.
Yasuhiro OKAMOTO, Nobuo MACHIDA, Kenichi HISADA
Filed: 9 Oct 19
Utility
Control system and semiconductor device
18 May 20
A semiconductor device for controlling an apparatus includes a first memory that stores data indicating, in association with each other, a factor that occurs with respect to the apparatus and control contents of the apparatus to be performed with respect to the factor; a second memory, and a processor executing program instructions and configured to estimate the factor and a required time until encountering the factor based on a result of an observation of a periphery of the apparatus, and decide control contents of the apparatus based on the estimated factor and the data, to control the apparatus.
Yuki Kajiwara
Filed: 28 Nov 17
Utility
Semiconductor device
18 May 20
According to one embodiment, a semiconductor device performs processing based on a user program by using a user program, which is used in a normal mode, as an analysis program and making a plurality of peripheral circuits having the same function operate in lock-step where the plurality of peripheral circuits operate in the identical manner, and makes failure diagnosis of the peripheral circuits by determining match or mismatch of a plurality of analysis information respectively obtained from the plurality of peripheral circuits operating in lock-step.
Takuya Lee, Tetsuya Kokubun, Yutaka Nakadai, Kenji Shiozawa, Yoshihide Nakamura
Filed: 2 May 18
Utility
Semiconductor device and method of manufacturing same
18 May 20
In an optical waveguide supplied with electricity by using a heater, miniaturization of the device is achieved by enhancing heat dissipation efficiency and heat resistance.
Tetsuya Iida, Yasutaka Nakashiba, Shinichi Kuwabara
Filed: 10 May 18
Utility
Semiconductor storage device including memory cells, word driver, dummy word driver
18 May 20
A semiconductor storage device includes a plurality of memory cells arranged in a matrix, a word line provided corresponding to a memory cell row, a dummy word line formed in a metal interconnection layer adjacent to a metal interconnection layer in which the word line is formed, a word driver circuit configured to drive the word line, and a dummy word driver circuit configured to increase voltage on the word line based on interline capacitance between the word line and the dummy word line.
Yuichiro Ishii, Shinji Tanaka
Filed: 13 Nov 16
Utility
Semiconductor memory device having memory cell pairs defining data based on threshold voltages
18 May 20
To provide a semiconductor memory device capable of storing multi-value data while suppressing an increase in the threshold voltage set for a memory cell.
Hirokazu Nagase
Filed: 24 Aug 18
Utility
Semiconductor device
18 May 20
Provided is a level shifter which can retain an operation margin and enhance an exceeded-breakdown-voltage preventing effect.
Yoji Kashihara
Filed: 14 Jan 19
Utility
Semiconductor device
18 May 20
A semiconductor device that can perform voltage monitoring with a small circuit area is provided.
Masataka Minami
Filed: 9 Aug 18
Utility
Semiconductor device including a plurality of nitride semiconductor layers
18 May 20
In a semiconductor device (MISFET) having a gate electrode formed over a nitride semiconductor layer with a gate insulating film interposed therebetween, the gate insulating film includes a first gate insulating film (oxide film of first metal) formed on the nitride semiconductor layer and a second gate insulating film (oxide film of second metal).
Toshihiro Iizuka, Shin Koyama, Yoshitake Kato
Filed: 30 Apr 14
Utility
Semiconductor device, power module, and control method of power conversion device
18 May 20
The junction temperature of a field effect transistor is detected with a higher degree of accuracy than in the past.
Satoshi Narumi
Filed: 4 Jun 18
Utility
Video signal receiving apparatus and video signal receiving method
18 May 20
A video signal receiving apparatus receives a first and second video signals for transmitting a same video content.
Yuichi Takagi, Ren Imaoka
Filed: 12 May 19
Utility
Semiconductor Device, Control Device and Control Method
13 May 20
An interference of control signals is caused by a deviation in the start timings of counting between counters of timer counter units of a first MCU and a second MCU.
Tetsuji TSUDA, Yutaka FUNABASHI, Teruki FUKUYAMA
Filed: 26 Sep 19
Utility
Semiconductor Device and Method for Manufacturing the Same
13 May 20
A method for manufacturing a semiconductor device includes a step of reducing a thickness of a silicon oxide film embedded in an element isolation trench including fins in order to form protruded fins.
Tomohiro HAYASHI
Filed: 26 Sep 19
Utility
Power Supply Circuit, Power Supply System, and Control Method
13 May 20
To extend the transmission distance with the voltage supply source and improve the communication performance of PLCs Solution.
Noriyuki SHINOHARA, Akira KUWANO
Filed: 8 Oct 19