1577 patents
Page 59 of 79
Utility
Method of manufacturing a semiconductor device using a metal oxide film
8 Jun 20
To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties.
Tadashi Yamaguchi
Filed: 28 Feb 18
Utility
Semiconductor device and manufacturing method thereof
8 Jun 20
The reliability of resistive field plate part-containing semiconductor device is improved.
Sho Nakanishi
Filed: 24 Jul 18
Utility
2nrskdbhcwcx3hivhdhxkdbi6g4yv9ehfn v65nu4rw13whcpq9ouhawv
3 Jun 20
An object of the present invention is to provide an information input device capable of realizing high-precision touch operations.
Kentarou NIIKURA
Filed: 7 Oct 19
Utility
fp9kh8uvlh5wm76pkecns
3 Jun 20
The present invention solves a new problem that may occur when Try.SRC or Try.SNK is adopted.
Dan AOKI
Filed: 7 Oct 19
Utility
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3 Jun 20
It is an object of the present invention to provide a technique capable of performing user estimation without making the user aware of it.
Wataru KURIHARA, Takehiro MIKAMI
Filed: 7 Oct 19
Utility
1k6wpyoszojiswbz3h8l6ups59xn5d63agbzpch8dtj92hycy0a7px8cwaps
3 Jun 20
In a semiconductor device having a variable gain amplifier, a setting error of a gain associated with a crosstalk noise is reduced.
Tomoyuki TANAKA, Takahiro NAKAMURA
Filed: 14 Oct 19
Utility
k0knvmfpkr1bs8c3gzzx13dg4eb9avu14x
1 Jun 20
It is possible to detect a failure in a temperature sensor while preventing enlarging of a circuit scale.
Chiaki Kumahara, Tetsuhiro Koyama, Masaaki Hirano
Filed: 25 Oct 17
Utility
kfdu1fcyy908zh4szrd8t8ip8o h4071drpcyjhk
1 Jun 20
The aim of the present disclosure is to provide a watchdog timer that can perform a fault diagnosis during the actual use of a semiconductor device.
Kazuhito Ebisawa, Yukihiro Kishida
Filed: 30 Nov 17
Utility
8ls4a8l74eovtv3pcxvmckhtd3vmgbf9dhj44eagfca41j8ghd 8e7cxgb
1 Jun 20
A display data correction apparatus is provided with: a control circuit responsive to an input gray-level value for initially providing first to N-th control points (N≥3) defined in a coordinate system in which a first coordinate axis is associated with the input gray-level value and a second coordinate axis is associated with an output gray-level value to be calculated for the input gray-level value; and a processing circuit obtaining an output gray-level value by repeating an update operation in which the first to N-th control points are updated.
Hirobumi Furihata, Takashi Nose
Filed: 19 Dec 10
Utility
hroonpjsf2oijnd4eiipydxqw176jytq
1 Jun 20
There is provided, for example, a write assist circuit for controlling the voltage level of a memory cell power supply line coupled to an SRAM memory cell to be written in the write operation.
Makoto Yabuuchi
Filed: 14 Jan 19
Utility
j01key84u67m7zqgact92u
1 Jun 20
The present disclosure provides a technique for improving the reliability of a semiconductor device where spreading of cracking that occurs at the time of dicing to a seal ring can be restricted even in a semiconductor device with a low-k film used as an interlayer insulating film.
Kazuo Tomita
Filed: 9 Nov 17
Utility
27ezz150d6vg1izwycb3ouypommxrcdkh44qny53tdek45aq6k0f58gd2rz
1 Jun 20
The semiconductor device 100 comprises a first semiconductor element 113 provided on a face on one side of a flat plate shaped interconnect component 101, an insulating resin 119 covering a face of a side where the first semiconductor element 113 of the interconnect component 101 is provided and a side face of the first semiconductor element 113, and a second semiconductor element 111 provided on a face on the other side of the interconnect component 101.
Yoichiro Kurita
Filed: 3 Apr 19
Utility
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1 Jun 20
To enhance the performance of a semiconductor device.
Nao Nagata
Filed: 29 Oct 18
Utility
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1 Jun 20
The performances of a semiconductor device of a memory element are improved.
Masao Inoue
Filed: 9 Sep 18
Utility
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27 May 20
A MASH type sigma delta AD converter includes a modulator, an analog filter filtering an extraction signal obtained by extracting a probe signal and an quantization error generated in a quantizer within a sigma delta modulator, a low speed AD converter performing an AD conversion of an output signal of the analog filter, a first adaptive filter searching for a transfer function of the sigma delta modulator, a second adaptive filter searching for a transfer function from an output of the modulator to the low speed AD converter via the analog filter, and a noise cancellation circuit cancelling the probe signal and the quantization error included in an output signal of the quantizer using the search results by the first and second adaptive filters.
Takashi OSHIMA, Tetsuo MATSUI, Mitsuya FUKAZAWA, Katsuki TATEYAMA, Masaki FUJIWARA
Filed: 26 Sep 19
Utility
7syxkpdk5xb78svixqe84j2geztdlu4 ugnor1h3zs
27 May 20
The lower surface of the wiring substrate includes a first region overlapping with the semiconductor chip mounted on the upper surface, and a second region surrounding the first region and not overlapping with the semiconductor chip.
Yoshitaka OKAYASU, Shuuichi KARIYAZAKI
Filed: 14 Oct 19
Utility
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27 May 20
A first semiconductor chip and a second semiconductor chip are stacked such that a first inductor and a second inductor face each other.
Shinichi UCHIDA, Akio ONO, Shinichi KUWABARA, Yasutaka NAKASHIBA
Filed: 14 Oct 19
Utility
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25 May 20
It is possible to prevent a central processing unit and a security processing unit from accessing of a non-volatile memory at the same time.
Shinsuke Asari, Kenichi Ito, Yuki Mori, Shigemasa Shiota
Filed: 29 Nov 17
Utility
jnat1p5rsftnmw6pvsq75vljgxgb5d5m9k2 r57o3ac3
25 May 20
Related semiconductor devices have a problem in which analysis processing with high defect reproducibility cannot be performed.
Kenji Shiozawa, Yoshihide Nakamura, Takuya Lee, Yutaka Nakadai, Tetsuya Kokubun, Hiroyuki Sasaki
Filed: 1 May 18
Utility
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25 May 20
Yayumi Uehara
Filed: 1 Nov 17