7578 patents
Page 12 of 379
Utility
Ceramic showerheads with conductive electrodes
5 Dec 23
Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface.
Laksheswar Kalita, Soonam Park, Dmitry Lubomirsky, Tien Fak Tan, LokKee Loh, Saravjeet Singh, Tae Won Kim
Filed: 23 Feb 23
Utility
Symmetric flow valve for flow conductance control
5 Dec 23
Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein.
Andrew Nguyen, Yogananda Sarode Vishwanath, Xue Chang, Anilkumar Rayaroth, Chetan Naik, Balachandra Jatak Narayan
Filed: 1 Dec 21
Utility
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5 Dec 23
An adjustable attenuation optical unit that may include a lightguide that includes a core, wherein the core comprises an output, an input and an exterior surface; and an adjustable attenuator that is configured to define an interfacing parameter related to an area of the exterior surface thereby receiving at least some of the light that impinges on the area.
Eitam Yitzchak Vinegrad, Itay Asulin
Filed: 17 Aug 21
Utility
xhc1qe0fqosxf2q1nlgo2ec9rknymv11np
5 Dec 23
Process recipe data associated a process to be performed for a substrate at a process chamber is provided as input to a trained machine learning model.
Kartik B Shah, Satish Radhakrishnan, Karthik Ramanathan, Karthikeyan Balaraman, Adolph Miller Allen, Xinyuan Chong, Mitrabhanu Sahu, Wenjing Xu, Michael Sterling Jackson, Weize Hu, Feng Chen
Filed: 19 Dec 22
Utility
l2w280awe78kye0vf6ei 0a0gml0c03otn
5 Dec 23
A manufacturing system includes a processing chamber, an gas supply, and a mass flow control apparatus coupled to the gas supply and the processing chamber.
Ming Xu, Kenneth Le, Ashley M. Okada
Filed: 12 Feb 21
Utility
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5 Dec 23
A neural network is trained for use in a substrate thickness measurement system by obtaining ground truth thickness measurements of a top layer of a calibration substrate at a plurality of locations, each location at a defined position for a die being fabricated on the substrate.
Sivakumar Dhandapani, Arash Alahgholipouromrani, Dominic J. Benvegnu, Jun Qian, Kiran Lall Shrestha
Filed: 25 Jun 21
Utility
cjb0ygzhic4eqq2h9mi05voiaja33f1fgq2s qz0upnd0f9fmtel
30 Nov 23
Exemplary methods of OLED device processing are described.
Chung-Chia Chen, Yu-Hsin Lin, Jungmin Lee, Takuji Kato, Dieter Haas, Si Kyoung Kim, Ji Young Choung
Filed: 11 Nov 22
Utility
ho4hakzrcocfpzeomse252 zvhxa53fxi03v
30 Nov 23
Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof.
Minrui YU, Wenhui WANG, Jaesoo AHN, Jong Mun KIM, Sahil PATEL, Lin XUE, Chando PARK, Mahendra PAKALA, Chentsau Chris YING, Huixiong DAI, Christopher S. NGAI
Filed: 8 Aug 23
Utility
11wxf74aiu49xjwl1dpqzmyji65psizpx1ghk2sdyk2yljovgb58r6cm
30 Nov 23
Provided herein are approaches for optimizing a full horizontal scanned beam distance of an accelerator beam.
Tyler Wills, George M. Gammel, Eric Donald Wilson, Jay T. Scheuer, Xiangdong He, Shardul Patel, Robert C. Lindberg
Filed: 27 May 22
Utility
pr1xs2e8hs6lrqcg2yff63xgj6kjteyusy92sem jdhsy56y94i
30 Nov 23
A method of reducing gallium particle formation in an ion implanter.
Frank Sinclair, Bon-Woong Koo, Tseh-Jen Hsieh, Gregory E. Stratoti
Filed: 19 Apr 23
Utility
gisb7ghlmwdxfwepij59myg2xhgxtutp3fpf5wg9665esfc9jiaxwrh
30 Nov 23
The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability.
Zhepeng CONG, Ala MORADIAN, Tao SHENG, Nimrod SMITH, Ashur J. ATANOS, Vinh N. TRAN
Filed: 22 Jul 22
Utility
ivrpmznla2nv9m14b6ztwj1lerbvz7zqr6b2yk2v3n5vao6pvsr
30 Nov 23
Embodiments of the disclosure relate to methods for forming silicon based gapfill within substrate features.
Soham Asrani, Bhargav S. Citla, Srinivas D. Nemani, Ellie Y. Yieh
Filed: 27 May 22
Utility
rwu4fq9ujvfn6006 1nciup2sr
30 Nov 23
The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability.
Zhepeng CONG, Ala MORADIAN, Tao SHENG, Nimrod SMITH, Ashur J. ATANOS, Vinh N. TRAN
Filed: 22 Jul 22
Utility
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30 Nov 23
Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a semiconductor processing chamber, where a substrate may be positioned.
Xiaolin C. Chen, Baiwei Wang, Rohan Puligoru Reddy, Wanxing Xu, Zhenjiang Cui, Anchuan Wang
Filed: 27 May 22
Utility
6togky3lvbwvohr50gg5622t9727iy55tov5j u1icjr4buv
30 Nov 23
Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber.
Kaushik ALAYAVALLI, Andrew NGUYEN, Edward HAYWOOD, Lu LIU, Malav KAPADIA
Filed: 31 May 22
Utility
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30 Nov 23
Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature.
Liqi Wu, Feng Q. Liu, Bhaskar Jyoti Bhuyan, James Hugh Connolly, Zhimin Qi, Jie Zhang, Wei Dou, Aixi Zhang, Mark Saly, Jiang Lu, Rongjun Wang, David Thompson, Xianmin Tang
Filed: 25 May 22
Utility
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30 Nov 23
Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes.
Lakmal Charidu Kalutarage, Mark Joseph Saly, Bhaskar Jyoti Bhuyan, Thomas Joseph Knisley, Kelvin Chan, Regina Germanie Freed, David Michael Thompson, Susmit Singha Roy, Madhur Sachan
Filed: 16 Dec 22
Utility
bynyshlejm6xhr4tewzco3wi3b
30 Nov 23
Molybdenum(0) and coordination complexes are described.
Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
Filed: 10 Aug 23
Utility
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30 Nov 23
Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing.
Liangfa HU, Abdul Aziz KHAJA, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Yoichi SUZUKI
Filed: 14 Aug 23
Utility
qyybr7yn25doal8mpz2oqvkbdnncd5o6ak2jfsus10cdrax
30 Nov 23
A method of training a neural network includes obtaining two ground truth thickness profiles a test substrate, obtaining two thickness profiles for the test substrate as measured by an in-situ monitoring system while the test substrate is on polishing pads of different thicknesses, generating an estimated thickness profile for another thickness value that is between the two thickness values by interpolating between the two profiles, and training a neural network using the estimated thickness profile.
Kun Xu, Benjamin Cherian, Jun Qian, Kiran Lall Shrestha
Filed: 4 Aug 23