7578 patents
Page 14 of 379
Utility
Methods for seamless gap filling of dielectric material
28 Nov 23
A method for dielectric filling of a feature on a substrate yields a seamless dielectric fill with high-k for narrow features.
Chengyu Liu, Ruitong Xiong, Bo Xie, Xianmin Tang, Yijun Liu, Li-Qun Xia
Filed: 13 Oct 21
Utility
Low-k boron carbonitride films
28 Nov 23
Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber.
Zeqing Shen, Bo Qi, Abhijit Basu Mallick, Nitin K. Ingle
Filed: 8 Jan 21
Utility
pxjvi06 77abzfip2tnjrg43b26swohn74z48a7nkj0v0pjqr4v
28 Nov 23
Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber.
Huiyuan Wang, Susmit Singha Roy, Abhijit Basu Mallick
Filed: 19 May 21
Utility
q5sbry7tzdnw4442vu7qmm5w9tpmke
28 Nov 23
Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions.
Hans-Joachim L. Gossmann, Stanislav S. Todorov, Hiroyuki Ito
Filed: 7 Oct 20
Utility
haxtm7tk15 6azok0qxir7h2g4h8q6iez6nyhpmquxhgdb3s
28 Nov 23
Disclosed herein are embodiments of a servo-control system comprising at least one pneumatic actuator comprising a movable member, at least one proportional pneumatic valve configured to control fluid flow between the at least one pneumatic actuator and a pressurized fluid supply or a vent, a plurality of pressure sensors each configured to independently measure pressure in a respective supply line to the at least one pneumatic actuator, at least one position sensor configured to measure a position of the moveable member, and a controller.
Paul Wirth, Behzad Taheri
Filed: 27 Sep 22
Utility
5shq697qx6lla1qjphezjshipvmoqd1y3r xbtcp9ha8e
28 Nov 23
An article, apparatus, and method for detecting an etch material selectivity is provided.
Keith Berding, Blake Erickson, Soumendra Barman, Zhaozhao Zhu
Filed: 10 Aug 21
Utility
7jikt8hafx7vtwt41da ckmvirgreiuvva0w6cmpu
28 Nov 23
Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate.
Amirhasan Nourbakhsh, Lan Yu, Joseph F. Salfelder, Ki Cheol Ahn, Tyler Sherwood, Siddarth Krishnan, Michael Jason Fronckowiak, Xing Chen
Filed: 26 Mar 21
Utility
laz2yfghmm3x8swvk6uz6bhg2ksz34953iyj5ck5bnz
23 Nov 23
A substrate support assembly includes a puck, comprising a heating element, a power distribution assembly, and an insulator comprising at least one of alumina or thermoplastic disposed between the puck and the power distribution assembly, wherein an electrical connection between the heating element and the power distribution assembly comprises a terminal and a conical washer.
Denis Martin Koosau, Suresh Gupta, Martin Perez-Guzman, Ashish Goel
Filed: 15 May 23
Utility
t9slcbh u7lql5n4dvqzuwe3cnzcwzylvc5vgj
23 Nov 23
A three-dimensional NAND flash memory structure may include solid channel cores of epitaxial silicon that are grown directly from a silicon substrate reference.
Hsiang Yu Lee, Pradeep K. Subrahmanyan
Filed: 18 May 23
Utility
iztzq6oz0619qv7 dpxm
23 Nov 23
A semiconductor structure includes a plurality of memory levels stacked in a first direction, each of the plurality of memory levels including a semiconductor layer, a word line metal layer, and an interface on a cross section of the semiconductor layer, a spacer between adjacent memory levels of the plurality of memory levels in the first direction, and a bit line in contact with the interface of each of the plurality of memory levels, the bit line extending in the first direction.
Zhijun CHEN, Fredrick FISHBURN, Ying-Bing JIANG, Avgerinos V. GELATOS
Filed: 1 May 23
Utility
9sohcupdoa2hs1r2i0xf2wewiaidxvpz4bwtt4u5wia
23 Nov 23
Exemplary processing methods may include forming a plasma of a silicon-containing precursor.
Bhargav S. Citla, Soham Asrani, Joshua Rubnitz, Srinivas D. Nemani, Ellie Y. Yieh
Filed: 2 Aug 23
Utility
t5syqbmn29d9ylbb949dmh2yc2hlvy7ik110mw
23 Nov 23
Embodiments of the disclosure include an apparatus and method of forming a memory device with high-mobility oxide semiconductor channels.
Milan PESIC
Filed: 16 May 23
Utility
qi895e 9682pt1cxdgpuenuasjxckpp
23 Nov 23
Embodiments of the present disclosure are related to methods of preventing aluminum diffusion in a metal gate stack (e.g., high-κ metal gate (HKMG) stacks and nMOS FET metal gate stacks).
Srinivas Gandikota, Elizabeth Mao, Tianyi Huang, Tengzhou Ma, Chi-Chou Lin, Yixiong Yang
Filed: 18 May 22
Utility
p463nu5x2b3abqcv0enm7jf7ezhz621qi51ig6mkr0e8ivym5vrlngo9gh
23 Nov 23
A method includes identifying trace data including a plurality of data points, the trace data being associated with production, via a substrate processing system, of substrates having property values that meet threshold values.
Fei Li, Jimmy Iskandar, James Robert Moyne
Filed: 19 May 22
Utility
yl2jazcqhv flt8e4m6lx9kvw79e0lbttrt7h4nr
23 Nov 23
Disclosed are approaches for forming semiconductor device layers.
John Hautala, Charith Nanayakkara
Filed: 23 May 22
Utility
vl0fqoxza1twhflc0av041 ea1b48
23 Nov 23
A method includes identifying trace data including a plurality of data points, the trace data being associated with production, via a substrate processing system, of substrates having property values that meet threshold values.
Jimmy Iskandar, Fei Li, James Robert Moyne
Filed: 19 May 22
Utility
xl5smkej3ocjy3e 5mt9fb7it8p54sc6d87cw6revhy39nz
23 Nov 23
A method of forming a structure on a substrate is provided.
Steven C. H. HUNG, Srinivas GANDIKOTA, Yixiong YANG, Yong YANG
Filed: 26 Apr 23
Utility
cjssqj56rehk7307zl7uu4pnd7n1evlknpgmj83op9sbg1caymyb9y
23 Nov 23
There is provided a system and method of defect detection of a semiconductor specimen.
Boaz DUDOVICH, Assaf ARIEL, Amir BAR, Lior YEHIELI, Chen ITZIKOWITZ, Shiran BEN ISRAEL, Lior KATZ, Eli Oren JONI, Eyal ROT
Filed: 19 May 22
Utility
ydjuz e2zl95frjf4b9xrncxeht
23 Nov 23
Embodiments of the present disclosure generally relate to a substrate processing chamber, and methods for cleaning the substrate processing chamber are provided herein.
Mukesh Shivakumaraiah CHITRADURGA, Luke BONECUTTER, Sathya Swaroop GANTA, Canfeng LAI, Jay D. PINSON, Kaushik Comandoor ALAYAVALLI, Kallol BERA
Filed: 20 May 22
Utility
egb015zam qjrqpuw7911veo34uo4
23 Nov 23
A lamp and epitaxial processing apparatus are described herein.
Yao-Hung YANG, Shantanu Rajiv Gadgil, Kaushik Rao, Vincent Joseph Kirchhoff, Sagir Kadiwala, Munirah Mahyudin, Daniel Chou
Filed: 11 May 23