7578 patents
Page 17 of 379
Utility
Three Dimensional Device Formation Using Early Removal of Sacrificial Heterostructure Layer
16 Nov 23
A method for forming a nanosheet device.
Yan Zhang, Johannes M. van Meer, Sankuei Lin, Baonian Guo, Naushad K. Variam
Filed: 13 May 22
Utility
Plasma Sources and Plasma Processing Apparatus Thereof
16 Nov 23
Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus.
Vladimir NAGORNY, Wei LIU, Rene GEORGE
Filed: 19 May 23
Utility
bdwkm8pqcgir0996mdc79 o6c36dw0kj70ywb5sib
16 Nov 23
A microLED-quality layer of gallium nitride (GaN) may be formed above a silicon substrate for microLED devices to be formed.
Tyler Sherwood, Raghav Sreenivasan
Filed: 16 May 22
Utility
lm8lwjzs4wv6 chspkbzlva1j0xhzp
16 Nov 23
Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications.
Xiangxin RUI, Lai ZHAO, Jrjyan Jerry CHEN, Soo Young CHOI, Yujia ZHAI
Filed: 12 Jul 23
Utility
astuv05gwnlqozu3ffm2oka3k3vdj15d1uycxqn5
16 Nov 23
Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface.
Joseph AuBuchon, Kevin Griffin, Hanhong Chen
Filed: 27 Jul 23
Utility
dzftv9g3ysl1m1ohmj1odrltilxv2ujoynw7jc2y55a90y1gex5tr5p2
16 Nov 23
Methods for providing an inorganic oxide coating to high aspect ratio particles containing an active pharmaceutical ingredient are described as are compositions containing such coated particles.
Miaojun Wang, Jonathan Frankel, Pravin K. Narwankar, Suneel Kumar Rastogi, Shivkumar Chiruvolu, Fei Wang, Balaji Ganapathy, Shrikant Swaminathan
Filed: 19 May 23
Utility
ztd3tfpm3d6doezw865o85qh3lp31fado77soeu0 9wlqatg
16 Nov 23
A method may include generating a residual curvature map for a substrate, the residual curvature map being based upon a measurement of a surface of the substrate.
Pradeep Subrahmanyan
Filed: 8 May 23
Utility
h1plcpwku5rav1bi291rtkxenca55x448lteryqtzmwd587vsys
16 Nov 23
Embodiments of the disclosure include a polishing pad for planarizing a surface of a substrate during a polishing process.
Shiyan Akalanka Jayanath WEWALA GONNAGAHADENIYAGE, Ashwin CHOCKALINGAM
Filed: 24 Apr 23
Utility
8rodm1rmlt2r8za5ch3pe 71tgoceqe08dbh7jfa6bervxzxrdiq7mk4wb
16 Nov 23
Provided herein are approaches for angle control of neutral reactive species ion beams.
Glen F. R. Gilchrist, Yufeng Qiu
Filed: 13 May 22
Utility
kzi4z6x9d0essyd2u rpdpuff70obpyjpnl2x1zwaxy
16 Nov 23
A first robot arm places a calibration object into a load lock that separates a factory interface from a transfer chamber using a first taught position.
Nicholas Michael Bergantz, Damon K. Cox, Alexander Berger
Filed: 19 Jul 23
Utility
pf3 vqvabz6e20uc1y4zdouiavmwfl0loljc8cj5r01
16 Nov 23
Provided herein are approaches for angle control of neutral reactive species ion beams.
Glen F. R. Gilchrist
Filed: 13 May 22
Utility
f0afmgnutf0gjo4j7p77nsmmvfm4ww64slvpkjd8j7vw6kwajt3
16 Nov 23
Embodiments disclosed herein include a method for use with a semiconductor processing tool.
Jeong Jin Hong, Mi Hyun Jang, Sidharth Bhatia, Sejune Cheon, Joshua Maher, Upendra Ummethala
Filed: 16 May 22
Utility
bvdrto sw2j7308x9v5ab8j5t91d51zuhsb
16 Nov 23
Methods of manufacturing memory devices are provided.
Tomohiko Kitajima, Ning Li, Chang Seok Kang, Naomi Yoshida
Filed: 28 Mar 23
Utility
jtk0d42577lsfhfe6bb6 2rf2t1r4vfpfe2b27628k
16 Nov 23
An ion source that is capable of different modes of operation is disclosed.
Graham Wright, Shardul S. Patel
Filed: 10 May 22
Utility
wd1nemcxqux77q699adizp5ic ypz6zg8pwuo3sy8
16 Nov 23
A method of forming a semiconductor device may include forming a plurality of fins extending from a buried oxide layer, wherein a masking layer is disposed atop each of the plurality of fins, and performing a high-temperature ion implant to the semiconductor device.
Qintao Zhang, Rajesh Prasad, Jun-Feng Lu
Filed: 21 Aug 20
Utility
l4m5 gpvvw8dmhf0nygad4p5f58fj35dtex8orp9x7lkc
16 Nov 23
An ion source that is capable of different modes of operation is disclosed.
Graham Wright, Shardul S. Patel
Filed: 10 May 22
Utility
7aejcfl5d36gj1satx87 6vv771hv
16 Nov 23
Exemplary fluid delivery assemblies for a semiconductor processing system may include a liquid delivery source.
Daemian Raj Benjamin Raj, Collen Leng, Syed A. Alam, Tianyang Li
Filed: 13 May 22
Utility
8e1aboo2b0ufaa2yzji3yme2b05mxyuyzddnb nko9pfz6sb
16 Nov 23
Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber.
Shu-Kwan Danny LAU, Toshiyuki NAKAGAWA, Zhiyuan YE
Filed: 19 Jul 23
Utility
avl4 pcfu9xrvrenkmqlbqzqjsao3j3enuowkeoeuiejfkuh
16 Nov 23
A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate.
Peiqi WANG, Kai WU
Filed: 13 Apr 23
Utility
8bn80zvz dic2eikljqezx796zzqd7udk1g6482fa
16 Nov 23
A system and method for reducing charge on a workpiece disposed on a platen is disclosed.
David Morrell, Dawei Sun, Qin Chen
Filed: 10 May 22