Applied Materials (AMAT) USPTO patents

A substrate support assembly includes a plate structure and an insulator structure.

Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided.

A method of forming a contact layer in a semiconductor structure includes performing a pre-clean process on exposed surfaces of a plurality of first semiconductor regions and a plurality of second semiconductor regions formed on a substrate, wherein the exposed surfaces of the plurality of first and second semiconductor regions are each disposed within openings formed in a dielectric layer disposed over the substrate, performing a first selective epitaxial deposition process to form a first contact layer on the exposed surfaces of the first semiconductor regions and a second contact layer on the exposed surface of the second semiconductor regions, performing a patterning process to form a patterned stack, wherein the patterned stack comprises a patterned layer that comprises openings formed over the first contact layer disposed within each opening in the dielectric layer and a portion of the patterned layer that is disposed over each second contact layer disposed within each opening in the dielectric layer, and performing a selective removal process to remove the first contact layer selectively to the plurality of first semiconductor regions, the dielectric layer, and the patterned layer.

Methods and systems for monitoring wafer processing results continuously and in real-time.

The present disclosure relates to thin-form-factor semiconductor device packages, and methods and systems for forming the same.

A method of forming a TFT is provided including forming a buffer layer over a substrate.

A substrate processing system is provided having a processing chamber.

A method and apparatus for determining a growth rate on a semiconductor substrate is described herein.

A sensor device comprises a quartz crystal microbalance (QCM) and a coating on at least a portion of a surface of the QCM, wherein the coating selectively reacts with radicals of a target gas and does not react with stable molecules of the target gas.

Embodiments described herein relate to a method of using an apparatus for forming waveguides.

A system for nanoimprint lithography includes a master holder, a spacer, and a stamp support.

A method includes identifying trace data including a plurality of data points, the trace data being associated with production, via a substrate processing system, of substrates that have property values that meet threshold values.

Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber.

A method of depositing titanium nitride is disclosed.

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described.

Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described.

The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume.

The present disclosure relates to load cups that include an annular substrate station configured to receive a substrate.