7578 patents
Page 15 of 379
Utility
Selective Deposition of Carbon on Photoresist Layer for Lithography Applications
23 Nov 23
A method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.
Larry GAO, Nancy FUNG
Filed: 31 Jul 23
Utility
Methods and Apparatus for Processing a Substrate
23 Nov 23
Methods and apparatus for processing a substrate are provided herein.
Yiyang WAN, Weifeng YE, Shumao ZHANG, Gary HOW, Jiang LU, Lei ZHOU, Dien-yeh WU, Douglas LONG, Avgerinos V. GELATOS, Ying-Bing JIANG, Rongjun WANG, Xianmin TANG, Halbert CHONG
Filed: 19 May 22
Utility
High-temperature Substrate Support Assembly with Failure Protection
23 Nov 23
A substrate support assembly includes a plate structure and an insulator structure.
Denis Martin Koosau, Suresh Gupta, Martin Perez-Guzman, Ashish Goel
Filed: 15 May 23
Utility
Cluster Processing System for Forming a Metal Containing Material
23 Nov 23
Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided.
Keith Tatseun WONG, Srinivas D. NEMANI, Ellie Y. YIEH
Filed: 31 Jul 23
Utility
Contact Formation Process for Cmos Devices
23 Nov 23
A method of forming a contact layer in a semiconductor structure includes performing a pre-clean process on exposed surfaces of a plurality of first semiconductor regions and a plurality of second semiconductor regions formed on a substrate, wherein the exposed surfaces of the plurality of first and second semiconductor regions are each disposed within openings formed in a dielectric layer disposed over the substrate, performing a first selective epitaxial deposition process to form a first contact layer on the exposed surfaces of the first semiconductor regions and a second contact layer on the exposed surface of the second semiconductor regions, performing a patterning process to form a patterned stack, wherein the patterned stack comprises a patterned layer that comprises openings formed over the first contact layer disposed within each opening in the dielectric layer and a portion of the patterned layer that is disposed over each second contact layer disposed within each opening in the dielectric layer, and performing a selective removal process to remove the first contact layer selectively to the plurality of first semiconductor regions, the dielectric layer, and the patterned layer.
Nicolas Louis BREIL, Balasubramanian PRANATHARTHIHARAN, Benjamin COLOMBEAU, Anchuan WANG
Filed: 20 Mar 23
Utility
In-situ Integrated Wafer Parameter Detection System
23 Nov 23
Methods and systems for monitoring wafer processing results continuously and in real-time.
Shuran SHENG, Eric HOLLAR, Sock Hoon LIM, Yu YANG, Ralph P. ANTONIO, Gu LIU
Filed: 23 May 22
Utility
Semiconductor Device Packages with Enhanced Thermo-mechanical Reliability
23 Nov 23
The present disclosure relates to thin-form-factor semiconductor device packages, and methods and systems for forming the same.
Mukhles SOWWAN, Samer BANNA
Filed: 18 May 22
Utility
Regeneration Anneal of Metal Oxide Thin-film Transistors
23 Nov 23
A method of forming a TFT is provided including forming a buffer layer over a substrate.
Fan DEJIU, Yun-chu TSAI, Dong Kil YIM
Filed: 20 May 22
Utility
Hardware to Uniformly Distribute Active Species for Semiconductor Film Processing
23 Nov 23
A substrate processing system is provided having a processing chamber.
Harpreet SINGH, Jallepally RAVI, Zubin HUANG, Manjunatha KOPPA, Sandesh YADAMANE, Srinivas TOKUR MOHANA, Shreyas PATIL SHANTHAVEERASWAMY, Kai WU, Peiqi WANG, Mingrui ZHAO
Filed: 17 May 22
Utility
Epi Self-heating Sensor Tube As In-situ Growth Rate Sensor
23 Nov 23
A method and apparatus for determining a growth rate on a semiconductor substrate is described herein.
Zhepeng CONG, Tao SHENG, Ashur J. ATANOS
Filed: 23 May 22
Utility
Sensor for Measurement of Radicals
23 Nov 23
A sensor device comprises a quartz crystal microbalance (QCM) and a coating on at least a portion of a surface of the QCM, wherein the coating selectively reacts with radicals of a target gas and does not react with stable molecules of the target gas.
Mehran Moalem, Mehdi Balooch
Filed: 16 May 23
Utility
Method for Roughness Reduction In Manufacturing Optical Device Structures
23 Nov 23
Embodiments described herein relate to a method of using an apparatus for forming waveguides.
Thomas James SOLDI, Joseph OLSON, Morgan EVANS, Ludovic GODET
Filed: 20 Apr 23
Utility
Pitch and Orientation Uniformity for Nanoimprint Stamp Formation
23 Nov 23
A system for nanoimprint lithography includes a master holder, a spacer, and a stamp support.
Jing JIANG, Kang LUO
Filed: 19 May 23
Utility
Guardbands In Substrate Processing Systems
23 Nov 23
A method includes identifying trace data including a plurality of data points, the trace data being associated with production, via a substrate processing system, of substrates that have property values that meet threshold values.
Jimmy Iskandar, Fei Li, James Robert Moyne
Filed: 19 May 22
Utility
Hardware switch on main feed line in a radio frequency plasma processing chamber
21 Nov 23
Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber.
Yue Guo, Yang Yang, Kartik Ramaswamy
Filed: 11 Jun 21
Utility
PEALD titanium nitride with direct microwave plasma
21 Nov 23
A method of depositing titanium nitride is disclosed.
Hanhong Chen, Arkaprava Dan, Joseph AuBuchon, Kyoung Ha Kim, Philip A. Kraus
Filed: 11 Aug 20
Utility
Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool
21 Nov 23
Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described.
Jozef Kudela, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno, Avinash Shervegar, Kallol Bera, Xiaopu Li, Anantha K. Subramani, John C. Forster
Filed: 1 Mar 19
Utility
Methods of depositing SiCON with C, O, and N compositional control
21 Nov 23
Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described.
Mark Saly, David Thompson, Thomas Knisley, Bhaskar Jyoti Bhuyan
Filed: 12 Oct 20
Utility
System and method for radical and thermal processing of substrates
21 Nov 23
The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume.
Xinming Zhang, Abhilash J. Mayur, Shashank Sharma, Norman L. Tam, Matthew Spuller
Filed: 12 Feb 21
Utility
Apparatus and method of substrate edge cleaning and substrate carrier head gap cleaning
21 Nov 23
The present disclosure relates to load cups that include an annular substrate station configured to receive a substrate.
Wei Lu, Jimin Zhang, Jianshe Tang, Brian J. Brown
Filed: 6 Nov 20