28912 patents
Page 66 of 1446
Utility
Deep Trench Isolation Structure In a Pixel Sensor
30 Nov 23
A pixel sensor may include a deep trench isolation (DTI) structure that extends the full height of a substrate in which a photodiode of the pixel sensor is included.
Feng-Chien HSIEH, Yun-Wei CHENG, Kuo-Cheng LEE, Cheng-Ming WU
Filed: 3 Aug 23
Utility
Semiconductor Structure of Backside Illumination Cmos Image Sensor and Method for Forming the Same
30 Nov 23
The present disclosure provides a method of manufacturing a semiconductor structure of a CMOS image sensor.
CHING-HUNG KAO, JING-JYU CHOU
Filed: 26 May 22
Utility
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30 Nov 23
In an embodiment, a circuit includes: a transformer defining an inductive footprint within a first layer; a grounded shield bounded by the inductive footprint within a second layer separate from the first layer; and a circuit component bounded by the inductive footprint within a third layer separate from the second layer, wherein: the circuit component is coupled with the transformer through the second layer, and the third layer is separated from the first layer by the second layer.
Feng Wei KUO, Chewn-Pu Jou, Huan-Neng Chen, Lan-Chou Cho, Robert Bogdan Staszewski
Filed: 9 Aug 23
Utility
y9r2wltlw5r1wkz7vnqwu16iz2aemu31a07x17wgeg2or8l8fb2c26w
30 Nov 23
An inductive device includes an insulating layer, a lower magnetic layer, and an upper magnetic layer that are formed such that the insulating layer does not separate the lower magnetic layer and the upper magnetic layer at the outer edges or wings of the inductive device.
Wei-Yu CHOU, Yang-Che CHEN, Chen-Hua LIN, Victor Chiang LIANG, Huang-Wen TSENG, Chwen-Ming LIU
Filed: 10 Aug 23
Utility
0m3efd9444hflud941axcy2iwu6sk01lfvnrvky7aar1d4by7ydva3iwyq
30 Nov 23
Semiconductor structures and methods of forming the same are provided.
Chih-Fan Huang, Hsiang-Ku Shen, Dian-Hau Chen, Yen-Ming Chen
Filed: 25 Jul 23
Utility
s232iuyupi4w3shfcbj39o34u6rdww7l9paqu
30 Nov 23
Various embodiments of the present disclosure are directed towards an integrated chip (IC).
Szu-Hsien Lo, Che-Hung Liu, Tzu-Chung Tsai
Filed: 7 Aug 23
Utility
xnvk1y3hdheon3 7tihukf6gcm3jwj7i6ta
30 Nov 23
Semiconductor devices and methods are disclosed herein.
Wei Kai SHIH, Kuo-Liang WANG
Filed: 8 Aug 23
Utility
l4mqp96puwuvm8yp zq6p5n2e407ouhe6axh57h06
30 Nov 23
A semiconductor structure includes a capacitor structure and a contact structure.
JUI-LIN CHU, SZU-YU WANG, CHING I LI
Filed: 26 May 22
Utility
sufcb4d0iz6eb4wwstiwug52j8td7nykm479sbby9
30 Nov 23
A multilayer structure, a capacitor structure and an electronic device are provided.
HAI-DANG TRINH, YI YANG WEI, FA-SHEN JIANG, BI-SHEN LEE, HSUN-CHUNG KUANG
Filed: 30 May 22
Utility
9a9na1q1uafrtw1qblg0peqz3utq1k2ecu9lf7l3 ghw8jnf09csxtp78tor
30 Nov 23
A method of manufacturing a semiconductor device includes forming a first conductive layer over a first insulating layer and forming a first dielectric layer over the first conductive layer.
Tsung-Chieh HSIAO, Hsiang-Ku SHEN, Yuan-Yang HSIAO, Wen-Chiung TU, Chen-Chiu HUANG, Dian-Hau CHEN
Filed: 25 May 22
Utility
ps5iz0p363c65sv1juaj62gc 9xpwkq4ttvshqpez47odce66l
30 Nov 23
A super junction structure includes a substrate, wherein the substrate has a first conductivity type.
Shuai ZHANG, Feng HAN, Jian WU, Lian-Jie LI, Zhong-Hao CHEN
Filed: 10 Aug 23
Utility
jp3kmewxoo9l1wzonna7w7622a3vf3qrvxeknf1lnci
30 Nov 23
A semiconductor structure includes a semiconductor fin protruding from a substrate, a dielectric fin disposed adjacent and substantially parallel to the semiconductor fin, an epitaxial source/drain (S/D) feature disposed in the semiconductor fin, a dielectric layer disposed between a sidewall of the epitaxial S/D feature and a sidewall of the dielectric fin, and an air gap disposed in the dielectric layer.
Ko-Cheng Liu, Ming-Lung Cheng, Chang-Miao Liu
Filed: 7 Aug 23
Utility
mb3nsh1uz2t7adewjwdntkubv8zlasi3yt0oa 7i3yg73lafrequu
30 Nov 23
Semiconductor device and the manufacturing method thereof are disclosed.
Bwo-Ning Chen, Xusheng Wu, Pin-Ju Liang, Chang-Miao Liu, Shih-Hao Lin
Filed: 9 Aug 23
Utility
1l6gm0vpe120h4uo02s9jl8wackg2zzv0wk4smnhihk7mi7nj8p3
30 Nov 23
An embodiment includes a device having nanostructures on a substrate, the nanostructures including a channel region.
Hsin-Yi Lee, Cheng-Lung Hung, Chi On Chui
Filed: 26 Jul 23
Utility
ydikzfk7h1aio80j5 957zgyy3tv224cyvghp4hwet
30 Nov 23
Depositing gallium nitride and carbon (GaN:C) (e.g., in the form of composite layers) when forming a gallium nitride drain of a transistor provides a buffer between the gallium nitride of the drain and silicon of a substrate in which the drain is formed.
Chi-Ming CHEN, Kuei-Ming CHEN, Yung-Chang CHANG
Filed: 31 May 22
Utility
kc5w2f6s1q59ilz7iq959c nxeb8y9vb28n6rrbykve7jhzbm5g
30 Nov 23
A semiconductor device includes a plurality of nanostructures, a gate dielectric layer disposed on each nanostructure of the plurality of nanostructures, a gate electrode disposed on the gate dielectric layer and on the plurality of nanostructures, and a source/drain region adjacent to the nanostructures.
Chih Sheng Huang, Ming-Hua Yu, Yee-Chia Yeo
Filed: 26 May 22
Utility
hplvrhbat5ogrpb7u28ax43zsbtkhksm633vc l02gtkql0payi
30 Nov 23
The present disclosure relates to a semiconductor structure that includes a well region and a semiconductor substrate.
Hsin Fu Lin, Tsung-Hao Yeh
Filed: 1 Aug 23
Utility
x0nvu8dupoeebqd68fz8o0t0gxw
30 Nov 23
Embodiments of the present disclosure provides a solution to address any issues caused by non-uniform channel heights across a substrate.
Jui-Lin CHANG, Tsung-Yu CHIANG, Mi-Hua LIN, Cing-Yao JHAN
Filed: 24 May 22
Utility
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30 Nov 23
A high-voltage device includes a substrate, a gate structure over the substrate, a drain region disposed on a first side of the gate structure, a plurality of source regions disposed on a second side of the gate structure, and a plurality of doped regions disposed on the second side of the gate structure.
YU-YING LAI, PO-CHIH SU, YU-TING WEI, RUEY-HSIN LIU
Filed: 30 May 22
Utility
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30 Nov 23
A metal-oxide semiconductor field effect transistor (MOSFET) includes a substrate and a well over the substrate, the well including dopants of a first conductivity-type.
Jhon Jhy Liaw
Filed: 27 Jul 23