7578 patents
Page 28 of 379
Utility
Methods and apparatus for processing a substrate
10 Oct 23
Methods and apparatus for processing a substrate are provided herein.
Mengxue Wu, Siew Kit Hoi, Jay Min Soh, Yue Cui, Chul Nyoung Lee, Palaniappan Chidambaram, Jiao Song
Filed: 28 May 21
Utility
Carbon hard masks for patterning applications and methods related thereto
10 Oct 23
Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom.
Eswaranand Venkatasubramanian, Yang Yang, Pramit Manna, Kartik Ramaswamy, Takehito Koshizawa, Abhijit Basu Mallick
Filed: 6 Oct 22
Utility
b528mfpuyho6117o 2o7n
10 Oct 23
Disclosed herein are systems and methods relating to a transfer chamber for an electronic device processing system.
Alex Berger, Jeffrey Hudgens, Eric Englhardt
Filed: 8 Jul 21
Utility
agbmx4yg0idftt3hlwjcwh0gww3cx9kvf0d9r0z6b ed6
10 Oct 23
Methods and apparatus for supporting substrates are provided herein.
Shashidhara Patel, Ananthkrishna Jupudi, Ribhu Gautam
Filed: 12 Apr 21
Utility
41xsvecl2oki1fek10w0svmmtmbqla3d9laf
10 Oct 23
A substrate processing system is disclosed which includes a processing chamber comprising a susceptor having a first surface and a second surface opposite to the first surface, a groove formed in the first surface adjacent to a perimeter thereof, and a substrate support structure including a plurality of carrier lift pins, each of the plurality of carrier lift pins movably disposed in an opening formed from the second surface to the first surface, wherein the opening is recessed from the groove.
Masato Ishii, Richard O. Collins, Richard Giljum, Alexander Berger
Filed: 15 Jul 22
Utility
urlh9mldlwiwdd56oiqb9hrv0a
10 Oct 23
Implementations described herein provide a substrate support assembly.
Vijay D. Parkhe
Filed: 10 Mar 20
Utility
9wtpybf581epikvna6lbb55qxd9nzsi2w1f5 ivptp
10 Oct 23
Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described.
Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
Filed: 6 Jul 22
Utility
rijh 5fdfolm0s4thjumqx3gp
10 Oct 23
Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate.
Akhil Singhal, Allison Yau, Sang-Jin Kim, Zeqiong Zhao, Zhijun Jiang, Deenesh Padhi, Ganesh Balasubramanian
Filed: 16 Oct 20
Utility
yrxkn7i0oh7qm6nt8wb4p
10 Oct 23
A method of chemical mechanical polishing includes bringing a substrate having a conductive layer disposed over a semiconductor wafer into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, determining a sequence of thickness values for the conductive layer based on the sequence of signal values, and at least partially compensating for a contribution of conductivity of the semiconductor wafer to the signal values.
Wei Lu, David Maxwell Gage, Harry Q. Lee, Kun Xu, Jimin Zhang
Filed: 13 Jun 19
Utility
8v1qen3duj764y ka0kcweywbruvve795x8836x
10 Oct 23
A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post.
Paul D. Butterfield, Thomas H. Osterheld, Jeonghoon Oh, Shou-Sung Chang, Steven M. Zuniga, Fred C. Redeker
Filed: 25 Aug 22
Utility
4b3srotxe0aet3tok68vc47rnjdozamfscfin98 7xbe0wywzxknnr
10 Oct 23
A method of training a neural network includes obtaining two ground truth thickness profiles a test substrate, obtaining two thickness profiles for the test substrate as measured by an in-situ monitoring system while the test substrate is on polishing pads of different thicknesses, generating an estimated thickness profile for another thickness value that is between the two thickness values by interpolating between the two profiles, and training a neural network using the estimated thickness profile.
Kun Xu, Benjamin Cherian, Jun Qian, Kiran Lall Shrestha
Filed: 10 Jun 21
Utility
908ahxagifsidk9z 40gpwbl22b0hew0mhc02jk1kc0zw0opr
10 Oct 23
A carrier head for a polishing system includes a housing, a flexible membrane, a first plurality of pressure supply lines, a second plurality of pressure supply lines, and a valve assembly.
Steven M. Zuniga, Jay Gurusamy, Andrew J. Nagengast, Vladimir Galburt
Filed: 25 Jun 21
Utility
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10 Oct 23
Methods and apparatus of bioreactors for therapeutic cells manufacturing are provided herein.
Samer Banna, Mukhles Sowwan, Gary E. Dickerson
Filed: 3 Dec 20
Utility
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10 Oct 23
Methods and apparatus for a processing chamber are provided herein.
Patrick Tae, Yaoling Pan, Leonard M. Tedeschi
Filed: 30 Jul 19
Utility
x92auy9ta9lgwf7vd7pbuecgllj80nri7lovkc
10 Oct 23
Embodiments disclosed herein generally provide improved control of gas flow in processing chambers.
Zhepeng Cong, Schubert Chu, Nyi Oo Myo, Kartik Bhupendra Shah, Zhiyuan Ye, Richard O. Collins
Filed: 7 Apr 21
Utility
l697rxblye fpghmoll5xacff9xr
10 Oct 23
Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed.
Huiyuan Wang, Susmit Singha Roy, Takehito Koshizawa, Bo Qi, Abhijit Basu Mallick
Filed: 11 Dec 20
Utility
73a9kyuyyu4iayxzz93etek2sxdod03v1fl4cks8m29q8wplnfaxn0e
10 Oct 23
Systems for electroplating seal inspection may include a module configured to support a seal for inspection.
Matthew Heller, David W. Bricker
Filed: 27 Apr 20
Utility
csj84c6nov2omx7jcdurczpndl9zlc l555up34u9ts09h
10 Oct 23
Extreme ultraviolet (EUV) mask blanks, methods of forming EUV mask blanks and production systems therefor are disclosed.
Wen Xiao, Herng Yau Yoong, Vibhu Jindal
Filed: 9 Sep 21
Utility
eizzt0n7o1ttfnbft5b3 4j85pwhpvuh
10 Oct 23
A system comprises a factory interface (FI) comprising an FI chamber and a carrier purge chamber, the FI configured to receive a substrate carrier that becomes coupled to the FI such that the carrier purge chamber is positioned between the FI chamber and the substrate carrier, the substrate carrier comprising a carrier door.
Michael R. Rice, Dean C. Hruzek
Filed: 31 Mar 21
Utility
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5 Oct 23
Substrate support, substrate support assemblies and process chambers comprising same are described.
Yongjing Lin, Lei Zhou, Muhannad Mustafa, Shih Chung Chen, Zhihui Liu, Chi-Chou Lin, Bin Cao, Janardhan Devrajan, Mario D. Silvetti, Mandyam Sriram
Filed: 31 Mar 22