7578 patents
Page 40 of 379
Utility
Self-alignment etching of interconnect layers
5 Sep 23
A method for etching a metal containing feature is provided.
Suketu Arun Parikh
Filed: 10 Jun 21
Utility
Techniques for void-free material depositions
5 Sep 23
Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate.
M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese, John Hautala
Filed: 22 Sep 20
Utility
k8r9b97zrtubrubigbx8o2ltum48inryz698fwilzkbc1zwr7
31 Aug 23
Embodiments described herein provide a lid assembly of a chamber for independent control of plasma density and gas distribution within the interior volume of the chamber.
Suhail ANWAR, Yui Lun WU, Jozef KUDELA, Carl A. SORENSEN, Jeevan Prakash SEQUEIRA
Filed: 3 May 23
Utility
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31 Aug 23
Systems and methods for grip-based transport speeds for objects transported at a manufacturing system is provided.
Khai T. Ngo, Michelle A. Wong, Helder Lee
Filed: 28 Feb 22
Utility
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31 Aug 23
Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration.
Kwan Wook Roh, Charles Sharbono, Kyle M. Hanson
Filed: 9 May 23
Utility
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31 Aug 23
The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes.
Sarah Michelle BOBEK, Abdul Aziz KHAJA, Ratsamee LIMDULPAIBOON, Kwangduk Douglas LEE
Filed: 5 May 23
Utility
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31 Aug 23
Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces.
Jing Xu, John L. Klocke, Marvin L. Bernt, Eric J. Bergman, Kwan Wook Roh
Filed: 20 Apr 23
Utility
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31 Aug 23
An apparatus for inserting a seal member into a seal groove includes a tray.
Yao-Hung YANG, Fred Eric RUHLAND, Chih-Yang CHANG, Chiache LIN, Saurabh Murlidhar CHAUDHARI, Sridhar KENCHANAPURA NAGARAJU, Kishan RAO
Filed: 28 Jun 22
Utility
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31 Aug 23
Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck.
Akhil Singhal, Allison Yau, Zeqiong Zhao, Sang-Jin Kim, Zhijun Jiang, Deenesh Padhi, Ganesh Balasubramanian
Filed: 5 May 23
Utility
f6w1q2pm2inlwz1r2w11bqnj3xplhgkajcfp24lgvqhhrgxo9f
31 Aug 23
Methods of dicing optical devices from an optical device substrate are disclosed.
Yingdong LUO, Kangkang WANG, Wei-Sheng LEI, Xiaopei DENG, Erica CHEN, Kang LUO, Daihua ZHANG, Rami HOURANI, Ludovic GODET
Filed: 23 Feb 23
Utility
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31 Aug 23
Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same.
Rodney S. LIM, Jung Bae KIM, Jiarui WANG, Yi CUI, Dong Kil YIM, Soo Young CHOI
Filed: 9 May 23
Utility
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31 Aug 23
Methods, apparatuses and systems in an integrated bonding system for optimizing bonding alignment between dies and a substrates include bonding, using a bonder of the integrated bonding system, a first die to a first substrate using preset alignment settings, transferring, using a transfer arm/robot of the integrated bonding system, the bonded die-substrate combination to an on-board inspection tool of the integrated bonding system, inspecting, at the on-board inspection tool, an alignment of the bond between the die and the substrate of the bonded die-substrate combination to determine a misalignment measure representing a misalignment of the bond between the die and the substrate of the bonded die-substrate combination, determining from the misalignment measurement, using a machine learning process, a correction measurement to be communicated to the bonder, and bonding, in the bonder, a different die to a different substrate using the determined machine-learning based correction measurement.
Ruiping WANG, Shijing WANG, Selim NAHAS, Ying WANG, Guan Huei SEE
Filed: 25 Feb 22
Utility
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31 Aug 23
A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum.
Philip Hsin-hua Li, Seshadri Ramaswami
Filed: 12 Apr 23
Utility
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31 Aug 23
The present disclosure generally relate to separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, and methods for fabricating the same.
Subramanya P. HERLE
Filed: 10 May 23
Design
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22 Aug 23
Philip Worthington, Jimmy An, Maxime Haot
Filed: 7 Dec 20
Utility
5z7s3tdpu6une9fibtapktuwpwdoqc3jgyw6jn8dmrtgq2i6a66u3scp
22 Aug 23
An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner to press an abrasive body against the polishing surface, an in-situ polishing pad monitoring system including an imager disposed above the platen to capture an image of the polishing pad, and a controller configured to receive the image from the monitoring system and generate a measure of polishing pad surface roughness based on the image.
Thomas H. Osterheld, Benjamin Cherian
Filed: 16 Mar 20
Utility
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22 Aug 23
Certain embodiments of the present disclosure relate to ceramic materials with high thermal shock resistance and high erosion resistance.
Ren-Guan Duan, Jennifer Y. Sun
Filed: 4 Aug 20
Utility
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22 Aug 23
A vapor deposition apparatus is described.
Stefan Bangert, Andreas Lopp
Filed: 27 May 21
Utility
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22 Aug 23
Hydrogen free (low-H) silicon dioxide layers are disclosed.
Zeqing Shen, Bo Qi, Abhijit Basu Mallick, Nitin K. Ingle
Filed: 11 Feb 21
Utility
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22 Aug 23
Embodiments of the present disclosure generally relate to protective coatings on an aerospace component and methods for depositing the protective coatings.
Sukti Chatterjee, Lance A. Scudder, Yuriy Melnik, David A. Britz, Thomas Knisley, Kenichi Ohno, Pravin K. Narwankar
Filed: 16 Apr 20