3198 patents
Page 13 of 160
Utility
Profile shaping for control gate recesses
10 Oct 23
Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate.
Akhil Singhal, Allison Yau, Sang-Jin Kim, Zeqiong Zhao, Zhijun Jiang, Deenesh Padhi, Ganesh Balasubramanian
Filed: 16 Oct 20
Utility
Compensation for substrate doping for in-situ electromagnetic inductive monitoring
10 Oct 23
A method of chemical mechanical polishing includes bringing a substrate having a conductive layer disposed over a semiconductor wafer into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, determining a sequence of thickness values for the conductive layer based on the sequence of signal values, and at least partially compensating for a contribution of conductivity of the semiconductor wafer to the signal values.
Wei Lu, David Maxwell Gage, Harry Q. Lee, Kun Xu, Jimin Zhang
Filed: 13 Jun 19
Utility
2ek0vf8860pel5mhwg51dy9wtyuvxo3kqqu9bawolj57c3475g
10 Oct 23
A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post.
Paul D. Butterfield, Thomas H. Osterheld, Jeonghoon Oh, Shou-Sung Chang, Steven M. Zuniga, Fred C. Redeker
Filed: 25 Aug 22
Utility
ljapyvn7bes5jxpqpje5567 zytu89dlde026tx6r3fn962e4p
10 Oct 23
A method of training a neural network includes obtaining two ground truth thickness profiles a test substrate, obtaining two thickness profiles for the test substrate as measured by an in-situ monitoring system while the test substrate is on polishing pads of different thicknesses, generating an estimated thickness profile for another thickness value that is between the two thickness values by interpolating between the two profiles, and training a neural network using the estimated thickness profile.
Kun Xu, Benjamin Cherian, Jun Qian, Kiran Lall Shrestha
Filed: 10 Jun 21
Utility
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10 Oct 23
A carrier head for a polishing system includes a housing, a flexible membrane, a first plurality of pressure supply lines, a second plurality of pressure supply lines, and a valve assembly.
Steven M. Zuniga, Jay Gurusamy, Andrew J. Nagengast, Vladimir Galburt
Filed: 25 Jun 21
Utility
m5rf6envnebf1uxshcxktlhbccpdg p1y98jno7m
10 Oct 23
Methods and apparatus of bioreactors for therapeutic cells manufacturing are provided herein.
Samer Banna, Mukhles Sowwan, Gary E. Dickerson
Filed: 3 Dec 20
Utility
qp5owudluc0hjcdk4d8a4tsgsbh5un39ji0rq3d
10 Oct 23
Methods and apparatus for a processing chamber are provided herein.
Patrick Tae, Yaoling Pan, Leonard M. Tedeschi
Filed: 30 Jul 19
Utility
s03fdr92pgt9afur0s8zcbuqrjpqy6k7nfyivanoqzvr10pq
10 Oct 23
Embodiments disclosed herein generally provide improved control of gas flow in processing chambers.
Zhepeng Cong, Schubert Chu, Nyi Oo Myo, Kartik Bhupendra Shah, Zhiyuan Ye, Richard O. Collins
Filed: 7 Apr 21
Utility
40jvxsg0iwzv6ngn54mufy3z
10 Oct 23
Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed.
Huiyuan Wang, Susmit Singha Roy, Takehito Koshizawa, Bo Qi, Abhijit Basu Mallick
Filed: 11 Dec 20
Utility
g7fjzbyyjr0wnb1fv85ztfy9ddqaynkx9p8 k6gnpsc
10 Oct 23
Systems for electroplating seal inspection may include a module configured to support a seal for inspection.
Matthew Heller, David W. Bricker
Filed: 27 Apr 20
Utility
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10 Oct 23
Extreme ultraviolet (EUV) mask blanks, methods of forming EUV mask blanks and production systems therefor are disclosed.
Wen Xiao, Herng Yau Yoong, Vibhu Jindal
Filed: 9 Sep 21
Utility
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10 Oct 23
A system comprises a factory interface (FI) comprising an FI chamber and a carrier purge chamber, the FI configured to receive a substrate carrier that becomes coupled to the FI such that the carrier purge chamber is positioned between the FI chamber and the substrate carrier, the substrate carrier comprising a carrier door.
Michael R. Rice, Dean C. Hruzek
Filed: 31 Mar 21
Utility
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3 Oct 23
An article such as a susceptor includes a body of a thermally conductive material coated by a first protective layer and a second protective layer over a surface of the body.
Vahid Firouzdor, Biraja P. Kanungo, Jennifer Y. Sun, Martin J. Salinas, Jared Ahmad Lee
Filed: 30 Sep 20
Utility
0z3ooghbkxro7w00ek5zkx575z76l2h7a8sqipiik
3 Oct 23
Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described.
David Marquardt, Carl White, Mohith Verghese
Filed: 10 Jan 23
Utility
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3 Oct 23
The present disclosure relates to a gas confiner assembly designed to reduce the non-uniform deposition rates by confining the gas flow and changing the local gas flow distribution near the edge regions of the substrate.
Lai Zhao, Qunhua Wang, Robin L. Tiner, Soo Young Choi, Beom Soo Park
Filed: 30 Jan 15
Utility
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3 Oct 23
Among other things, a computer-based method is described.
Jeffrey Drue David, Boguslaw A. Swedek
Filed: 29 Jun 18
Utility
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3 Oct 23
A method, an inspection system and a sensing unit.
Pavel Margulis
Filed: 18 Jan 22
Utility
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3 Oct 23
Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a system and method for monitoring a rotation-lift assembly of a process chamber.
Thomas Ackermann, Torsten Fankhaenel
Filed: 25 Jun 19
Utility
kxgwmlhkll3hzrsaw5i3vd071z u6w8q3r3ppzcjtls3625xy5
3 Oct 23
Embodiments of the present disclosure generally relate to imprint lithography, and more particularly to methods and apparatus for creating a large area imprint without a seam.
Kevin Laughton Cunningham, Manivannan Thothadri
Filed: 1 Mar 21
Utility
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3 Oct 23
Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.
Xi Chen, Shreesha Yogish Rao, Sheng Guo, Chi H. Ching, Thomas Blasius Brezoczky, Cheng-Hsiung Tsai
Filed: 23 Jul 21