3198 patents
Page 22 of 160
Utility
Processing chamber condition and process state monitoring using optical reflector attached to processing chamber liner
25 Jul 23
A system includes a reflector attached to a liner of a processing chamber.
Patrick Tae
Filed: 12 Jun 20
Utility
Methods of greytone imprint lithography to fabricate optical devices
25 Jul 23
A method of imprinting a pattern on a substrate is provided.
Hao Tang, Kang Luo, Erica Chen, Yongan Xu
Filed: 9 May 22
Utility
8l01qcfx6sei1yabpcihjdceg iist7fakutdznmzwmwa6
25 Jul 23
A substrate processing system comprises one or more transfer chambers; a plurality of process chambers connected to the one or more transfer chambers; and a computing device connected to each of the plurality of process chambers.
Priyadarshi Panda, Lei Lian, Pengyu Han, Todd J. Egan, Prashant Aji, Eli Mor, Alex J. Tom, Leonard Michael Tedeschi
Filed: 6 Jan 21
Utility
ko9ymquh5id3k6lm60s ij4g5
25 Jul 23
Monitoring operations of a polishing system includes obtaining a time-based sequence of reference images of a component of the polishing system performing operations during a test operation of the polishing system, receiving from a camera a time-based sequence of monitoring images of an equivalent component of an equivalent polishing system performing operations during polishing of a substrate, determining a difference value for the time-based sequence of monitoring images by comparing the time-based sequence of reference images to the time-based sequence of monitoring image using an image processing algorithm, determining whether the difference value exceeds a threshold, and in response to determining the difference value exceeds the threshold, indicating an excursion.
Sidney P. Huey, Thomas Li, Benjamin Cherian
Filed: 23 Feb 22
Utility
oz1xft4qyslwyr09mcdv3sr zgv1w7kzgdl7fr92eu1un3ct
25 Jul 23
Embodiments herein are directed to a resonator for an ion implanter.
Costel Biloiu, Michael Honan, Robert B. Vopat, David Blahnik, Charles T. Carlson, Frank Sinclair, Paul Murphy
Filed: 16 Jul 21
Utility
mc61qcjm2j9f6e5w0d9nvu 4mb385okcky3bdi6rhe4mabusowx7we
25 Jul 23
Exemplary lithography mask processing chambers may include a substrate support that includes a plurality of lift pins that are vertically translatable relative to a top surface of the substrate support.
Khiem Nguyen
Filed: 28 Apr 21
Utility
rnm4c0yp8fjrraqwrpejs8utvaggibl35kcfw5lg2
25 Jul 23
Exemplary semiconductor processing systems may include a remote plasma source.
Tanmay P. Gurjar, Sumit S. Patankar, Sudhir R. Gondhalekar
Filed: 23 Apr 20
Utility
75ybagoej5litz26mrguz15ye3aby2yy9j3
25 Jul 23
Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber.
Michael Wenyoung Tsiang, Yichuen Lin, Kevin Hsiao, Hang Yu, Deenesh Padhi, Yijun Liu, Li-Qun Xia
Filed: 23 Oct 20
Utility
1zzemgb5anspi1kfndnvb99i vddnai2pzlj3hrqcztpgv
25 Jul 23
Embodiments of a methods and cleaning systems for cleaning components for use in substrate processing equipment are provided herein.
Richard Wells Plavidal, Scott Osterman, David W. Groechel, Gang Grant Peng, John Z. Smith
Filed: 28 Jan 21
Utility
e3jqpswk2ayho3g71em6s7qggbuba0 drlqhw
25 Jul 23
One or more embodiments described herein generally relate to drying environments within semiconductor processing systems.
Edwin Velazquez, Jim Kellogg Atkinson
Filed: 2 Aug 22
Utility
e27ubyafiud33u94z73e6694d1j e81o0fpvhh6bdkjtkijtjh8vldb2sw
18 Jul 23
A chemical mechanical polishing apparatus includes a platen to support a polishing pad, the platen having a recess, a flexible membrane in the recess, and an in-situ vibration monitoring system to generate a signal.
Boguslaw A. Swedek, Dominic J. Benvegnu, Chih Chung Chou, Nicholas Wiswell, Thomas H. Osterheld, Jeonghoon Oh
Filed: 13 Mar 19
Utility
bi75lpc2mitkgyp8nphe0l8b95il1vfmtzwmk2erqnrdt0e8vgzoz2n
18 Jul 23
A method for forming a film of an oxide of In, Ga, and Zn, having a spinel crystalline phase comprises providing a substrate in a chamber; providing a sputtering target in said chamber, the target comprising an oxide of In, Ga, and Zn, wherein: In, Ga, and Zn represent together at least 95 at % of the elements other than oxygen, In represents from 0.6 to 44 at % of In, Ga, and Zn, Ga represents from 22 to 66 at % of In, Ga, and Zn, and Zn represents from 20 to 46 at % of In, Ga, and Zn; and forming a film on the substrate, the substrate being at a temperature of from 125° C. to 250° C., by sputtering the target with a sputtering gas comprising O2, the sputtering being performed at a sputtering power of at least 200 W.
Hendrik F. W. Dekkers, Jose Ignacio del Agua Borniquel
Filed: 25 Nov 20
Utility
gc7uvsb8uquz6c2jshuw49c18tri98et3hz63zt8p2esxjq68byvwnkcf07
18 Jul 23
Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described.
Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
Filed: 7 May 21
Utility
5ma537kv6vy3ou7lnlfligwxtetc5t0pdacy6yazn124
18 Jul 23
Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material.
Yi Zhou, Xinyue Chen, Mukul Khosla, Yangchung Lee
Filed: 17 May 21
Utility
puba4rmsf6u1m 12soypu2ujigckvppzxtkcpy6lt5ueost46p1
18 Jul 23
Methods for forming a nucleation layer on a substrate.
Kelvin Chan, Yihong Chen
Filed: 15 Nov 21
Utility
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18 Jul 23
Methods of forming a metal oxyfluoride films are provided.
Nitin Deepak, Gayatri Natu, Albert Barrett Hicks, III, Prerna Sonthalia Goradia, Jennifer Y. Sun
Filed: 16 Feb 22
Utility
3hf84so2t27bfah6av5lrh86h5nzxqavy9f5lrd7q2fie4if
18 Jul 23
A non-conformal, highly selective liner for etch methods in semiconductor devices is described.
Bo Qi, Huiyuan Wang, Yingli Rao, Abhijit Basu Mallick
Filed: 10 Aug 20
Utility
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18 Jul 23
An apparatus for processing substrates includes a continuum radiation source, a source manifold optically coupled to the continuum radiation source and comprising: a plurality of beam guides, each having a first end that optically couples the beam guide to the continuum radiation source; and a second end.
Samuel C. Howells
Filed: 30 Oct 20
Utility
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18 Jul 23
The disclosure describes a plasma source assemblies comprising a differential screw assembly, an RF hot electrode, a top cover, an upper housing and a lower housing.
Tsutomu Tanaka, Jared Ahmad Lee, Rakesh Ramadas, Dmitry A. Dzilno, Gregory J. Wilson, Sriharish Srinivasan
Filed: 26 Dec 20
Utility
pm3od0tpyhs35m4tf0ceajcbtcx3zxm
18 Jul 23
Methods of doping a semiconductor material are disclosed.
Srinivas Gandikota, Abhijit Basu Mallick, Swaminathan Srinivasan, Rui Cheng, Susmit Singha Roy, Gaurav Thareja, Mukund Srinivasan, Sanjay Natarajan
Filed: 20 Apr 22