3198 patents
Page 27 of 160
Utility
Dynamic interface for providing a symmetric radio frequency return path
30 May 23
Exemplary substrate processing system may include a chamber body that defines a processing region.
Ravikumar Patil
Filed: 16 Oct 20
Utility
Methods and apparatus for measuring edge ring temperature
30 May 23
An apparatus for measuring a temperature of an assembly that is internal to a process chamber.
Ji-Dih Hu, Wolfgang R. Aderhold, Dongming Iu
Filed: 25 Apr 22
Utility
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30 May 23
A method of isolating sections of the channel layer in a SOI workpiece is disclosed.
Sipeng Gu, Wei Zou, Kyu-Ha Shim
Filed: 7 Oct 20
Utility
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30 May 23
A solid state heater and methods of manufacturing the heater is disclosed.
David Morrell, Dawei Sun
Filed: 5 Dec 19
Utility
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30 May 23
Embodiments herein are directed to a linear accelerator assembly for an ion implanter.
Frank Sinclair, Paul J. Murphy, Michael Honan, Charles T. Carlson
Filed: 4 Dec 20
Utility
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30 May 23
Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures.
Chung-Chia Chen, Ji Young Choung, Dieter Haas, Yu-Hsin Lin, Jungmin Lee, Wen-Hao Wu, Si Kyoung Kim
Filed: 4 Aug 22
Utility
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23 May 23
Embodiments of megasonic cleaning chambers are provided herein.
Banqiu Wu, Khalid Makhamreh, Eliyahu Shlomo Dagan
Filed: 14 Dec 21
Utility
0fz22cq01zhk9kll5cesvy35fsrqheraffb 962in9xdm0c2hxee4lhop
23 May 23
Apparatus that forms low resistivity tungsten film on substrates.
Wenting Hou, Jianxin Lei, Jothilingam Ramalingam, Prashanth Kothnur, William R. Johanson
Filed: 5 Jul 22
Utility
3ufc7my1q7s9w6pta25gjwskpek8sigesfdw6i4m8kykr4b06vl274qax
23 May 23
Methods for filling a substrate feature with a carbon gap fill, while leaving a void, are described.
Zeqing Shen, Bo Qi, Abhijit Basu Mallick
Filed: 26 Oct 20
Utility
e1m6nr6urpbv0gnh1qdl9kvlwspxssxc38luub1fc05o
23 May 23
Methods and apparatus for controlling a semiconductor process leverage phase shifting between at least two RF generators to improve wafer performance parameters.
Chong Jiang, Malcolm Delaney
Filed: 26 Jun 20
Utility
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23 May 23
Implementations disclosed describe a method and a system to perform the method of obtaining a reduced representation of a plurality of sensor statistics representative of data collected by a plurality of sensors associated with a device manufacturing system performing a manufacturing operation.
Jimmy Iskandar, Michael D. Armacost
Filed: 16 Jul 20
Utility
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23 May 23
Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus.
Vladimir Nagorny, Wei Liu, Rene George
Filed: 14 Jan 21
Utility
dv9h3227s6qlpsh0hrb7c5jk hc4p1sx
23 May 23
Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein.
Pingyan Lei, Dien-Yeh Wu, Xiao Ming He, Jennifer Y. Sun, Lei Zhou, Takashi Kuratomi, Avgerinos V. Gelatos, Mei Chang, Steven D. Marcus
Filed: 11 Apr 20
Utility
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23 May 23
A shield encircles a sputtering target that faces a substrate support in a substrate processing chamber.
Kathleen Scheible, Michael Allen Flanigan, Goichi Yoshidome, Adolph Miller Allen, Cristopher Pavloff
Filed: 10 May 19
Utility
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23 May 23
Chalcogen silane precursors are described.
Chandan Kr Barik, Michael Haverty, Muthukumar Kaliappan, Cong Trinh, Bhaskar Jyoti Bhuyan, John Sudijono, Anil Kumar Tummanapelli, Richard Ming Wah Wong, Yingqian Chen
Filed: 18 Jan 21
Utility
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23 May 23
Methods for depositing a silicon-containing film on a substrate are described.
Zeqing Shen, Bo Qi, Abhijit Basu Mallick
Filed: 23 Oct 20
Utility
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23 May 23
Embodiments provided herein generally relate to methods of modifying portions of layer stacks.
Suketu Arun Parikh
Filed: 25 Jan 21
Utility
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23 May 23
A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over the substrate, performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas, and performing a second etch process to smooth sidewalls of the features formed in the material layer by suppling a second etching gas.
Nancy Fung, Gabriela Alva
Filed: 7 Jul 21
Utility
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23 May 23
A method of patterning a substrate is provided.
Jonathan Shaw, Priyadarshi Panda, Nancy Fung, Yongchang Dong, Somaye Rasouli, Gene Lee
Filed: 29 Jul 21
Utility
4z8amqwubo5rwfwnkoqwhhzsph1ljd3lotsqja251m9ejv
23 May 23
A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements.
Kun Xu, Kiran Lall Shrestha, Doyle E. Bennett, David Maxwell Gage, Benjamin Cherian, Jun Qian, Harry Q. Lee
Filed: 11 May 21