3198 patents
Page 31 of 160
Utility
Inline microwave batch degas chamber
18 Apr 23
Methods and apparatus for a substrate processing chamber are provided herein.
Ribhu Gautam, Ananthkrishna Jupudi, Tuck Foong Koh, Preetham P. Rao, Vinodh Ramachandran, Yueh Sheng Ow, Yuichi Wada, Cheng-Hsiung Tsai, Kai Liang Liew
Filed: 28 May 19
Utility
Electrochemical depositions of ruthenium-containing materials
18 Apr 23
Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface.
Eric J. Bergman, Robert Mikkola
Filed: 25 Aug 21
Utility
8y88lcko77ay9pv d3038wx2c6v5l8udxo7caajxjj7dz7ody19pwe
18 Apr 23
Implementations of the present disclosure generally relate to separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, and methods for fabricating the same.
Subramanya P. Herle
Filed: 11 Aug 20
Utility
sydyrnadyclimb73uiqpqekhp6axbuhf5usw8333demgho2v
18 Apr 23
An apparatus for determining temperatures of substrates in microwave and/or vacuum environments.
Ananthkrishna Jupudi, Sai Kumar Kodumuri, Vinodh Ramachandran, Prashant Agarwal, Hadi Bin Amir Muhammad
Filed: 19 Oct 20
Utility
tptgzzybv5qxa7djm8pcl twfrasp8npbmj4evx
18 Apr 23
In a fluorescent in-situ hybridization imaging system performs, as nested loops, the following: (1) a valve sequentially couples a flow cell to a plurality of different reagent sources to expose the sample to a plurality of different reagents, (2) for each reagent of the plurality of different reagents, a motor sequentially positions the fluorescence microscope relative to sample at a plurality of different fields of view, (3) for each field of view of the plurality of different fields of view, a variable frequency excitation light source sequentially emits a plurality of different wavelengths, (4) for each wavelength of the plurality of different wavelengths, an actuator sequentially positions the fluorescence microscope relative to sample at a plurality of different vertical heights, and (5) for each vertical height of the plurality of different vertical heights, an image is obtained.
Yun-Ching Chang, Dan Xie, Chloe Kim
Filed: 16 Dec 20
Utility
zyso3hudy5av7jz2mnc9g13mdjuxpjc9m
18 Apr 23
A method of forming patterned features on a substrate is provided.
Yongan Xu, Rutger Meyer Timmerman Thijssen, Jinrui Guo, Ludovic Godet
Filed: 7 Jan 22
Utility
z1y5i5d984laxnhtsg7olootpmp 29yytvsbpwnbvs10bl5momphjo05v
18 Apr 23
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed.
Shuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
Filed: 19 Jan 21
Utility
5fljsn2omtpmu23032vz5y39uzxcp804gq57z341z4tnr
18 Apr 23
There is provided a system and method of segmenting an image of a fabricated semiconductor specimen.
Elad Ben Baruch, Shalom Elkayam, Shaul Cohen, Tal Ben-Shlomo
Filed: 30 Jun 20
Utility
6n6wuncxkhp0pcj8m5s1ym3cwc9euv5da3jukot9gsauy00z
18 Apr 23
An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having an opening formed in a front half thereof nearest the extraction aperture, wherein a rear half of the tubular cathode furthest from the extraction aperture is closed.
Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
Filed: 20 Aug 21
Utility
up3kcsgq3jr6npf2cw4vrd215h9ndbyxub8to6xf43t7jf3iyctlc1apfauc
18 Apr 23
Methods of depositing a film using a plasma enhanced process are described.
Farhad Moghadam, Hari Ponnekanti, Dmitry A. Dzilno
Filed: 21 Oct 20
Utility
qez6h5ps694zhm0h0fxt6jql9npitcwjxs9
18 Apr 23
Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber.
Baiwei Wang, Xiaolin C. Chen, Rohan Puligoru Reddy, Oliver Jan, Zhenjiang Cui, Anchuan Wang
Filed: 4 May 21
Utility
hl3jwmkds fof2zgczcynqh1zw7jav3oj8p3rrej07aace87eme7pfnbu
18 Apr 23
Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided.
Bhargav S. Citla, Jethro Tannos, Jingyi Li, Douglas A. Buchberger, Jr., Zhong Qiang Hua, Srinivas D. Nemani, Ellie Y. Yieh
Filed: 23 Aug 21
Utility
um8bo63b722z3plsbtzsgzhr7dda
18 Apr 23
A semiconductor processing system includes a first component and a second component.
Michael Robert Rice, Jeffrey C. Hudgens
Filed: 17 Dec 19
Utility
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18 Apr 23
A process of smoothing a top surface of a bit line metal of a memory structure to decrease resistance of a bit line stack.
Priyadarshi Panda, In Seok Hwang
Filed: 12 Nov 20
Utility
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18 Apr 23
Generally, examples described herein relate to deposition masks and methods of manufacturing and using such deposition masks.
Kevin Moraes, Alexander N. Lerner
Filed: 2 Mar 20
Utility
qyxlezw8iyzqzkjxo3ds2xg318c9v
18 Apr 23
A method and apparatus for forming metal electrode structures, more specifically lithium-containing anodes, high performance electrochemical devices, such as primary and secondary electrochemical devices, including the aforementioned lithium-containing electrodes.
Subramanya P. Herle
Filed: 21 Oct 19
Utility
d6cf9ucom90vxe89d5rpkp3p0mgwp5282rmfdznvobk8d
11 Apr 23
A method includes determining a plurality of features of a first original image of a first product that are expected to be different for one or more products to be produced via manufacturing parameters of a manufacturing process compared to the first product.
Abhinav Kumar, Benjamin Schwarz, Charles Hardy
Filed: 29 Mar 21
Utility
j44anov2l5kvmzznac3d88feu04h286o
11 Apr 23
A method, a non-transitory computer readable medium, and a system for evaluating an inspection algorithm for inspecting a semiconductor specimen.
Ilya Blayvas
Filed: 28 May 20
Utility
rn9gqcguzdff8zbajozkqjbwcisjjy2nklo6en7
11 Apr 23
A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.
Yehuda Zur, Igor Petrov
Filed: 28 Apr 21
Utility
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11 Apr 23
Exemplary methods of semiconductor processing may include providing a boron-containing precursor to a processing region of a semiconductor processing chamber.
Bo Qi, Zeqing Shen, Abhijit Basu Mallick
Filed: 24 Mar 21