3198 patents
Page 34 of 160
Utility
Substrate carrier using a proportional thermal fluid delivery system
28 Mar 23
A substrate carrier is described that uses a proportional thermal fluid delivery system.
Phillip Criminale, Justin Phi, Dan A. Marohl, Sergio Fukuda Shoji, Brad L. Mays
Filed: 17 Oct 19
Utility
Method of dielectric material fill and treatment
28 Mar 23
Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process.
Shi You, He Ren, Naomi Yoshida, Nikolaos Bekiaris, Mehul Naik, Martin Jay Seamons, Jingmei Liang, Mei-Yee Shek
Filed: 14 Apr 20
Utility
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28 Mar 23
Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided.
Xuebin Li, Wei Liu, Gaurav Thareja, Shashank Sharma, Patricia M. Liu, Schubert Chu
Filed: 17 Sep 21
Utility
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28 Mar 23
Exemplary semiconductor structures for neuromorphic applications may include a first layer overlying a substrate material.
Deepak Kamalanathan, Archana Kumar, Siddarth Krishnan
Filed: 26 May 20
Utility
c3e3wo8c9w7ng1hr0pjdqv7uwwgusqay1yvnf4vfb870kmsbyugh6
21 Mar 23
Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices.
Karl J. Armstrong, Ludovic Godet, Brian Alexander Cohen, Wayne McMillan, James D. Strassner, Benjamin Riordon
Filed: 8 Apr 20
Utility
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21 Mar 23
Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels.
Yu-Hsin Lin, Ji-Young Choung, Chung-Chia Chen, Jungmin Lee, Wen-Hao Wu, Takashi Anjiki, Takuji Kato, Dieter Haas, Si Kyoung Kim, Stefan Keller
Filed: 13 May 22
Utility
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21 Mar 23
A method of forming a metal oxide semiconductor field effect transistor with improved gate-induced drain leakage performance, the method including providing a semiconductor substrate having a gate trench formed therein, performing an ion implantation process on upper portions of sidewalls of the gate trench to make the upper portions more susceptible to oxidation relative to non-implanted lower portions of the sidewalls, and performing an oxidation process on surfaces of the substrate, wherein the implanted upper portions of the sidewalls develop a thicker layer of oxidation relative to the non-implanted lower portions of the sidewalls.
Sipeng Gu, Qintao Zhang
Filed: 7 May 21
Utility
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21 Mar 23
Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.
Todd J. Egan, Avishek Ghosh, Edward W. Budiarto, Guoheng Zhao
Filed: 18 Aug 20
Utility
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21 Mar 23
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed.
Shuwei Liu, Shiyu Liu, Vibhu Jindal
Filed: 6 Oct 20
Utility
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21 Mar 23
Embodiments of the present disclosure generally relate to apparatus and methods for verification and re-use of process fluids.
Mangesh Ashok Bangar, Gautam Pisharody, Lancelot Huang, Alan L. Tso, Douglas A. Buchberger, Jr., Huixiong Dai, Dmitry Lubomirsky, Srinivas D. Nemani, Christopher Siu Wing Ngai
Filed: 5 Apr 21
Utility
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21 Mar 23
A valve includes a first inline compartment to attach to a first return line exiting a processing chamber and a second inline compartment to attach to a second return line entering a coolant source.
Shivaram Chandrashekar, Kumaresan Nagarajan
Filed: 10 Feb 21
Utility
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21 Mar 23
A method includes receiving, from sensors, current trace data including current sensor values associated with producing products.
Jimmy Iskandar, James Robert Moyne
Filed: 7 Aug 19
Utility
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21 Mar 23
A method of automatically focusing a charged particle beam on a surface region of a sample is provided.
Robert Trauner, Bernhard Schüler, Bernhard G. Mueller, Nikolai Knaub, Kulpreet Singh Virdi
Filed: 21 Oct 21
Utility
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21 Mar 23
Disclosed herein is a gas delivery assembly for processing a substrate.
James Rogers
Filed: 15 Feb 19
Utility
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21 Mar 23
Embodiments described herein relate to a high pressure processing system with a condenser and methods for utilizing the same.
Jean Delmas
Filed: 26 Mar 20
Utility
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21 Mar 23
Methods of forming an oxide layer over a semiconductor substrate are provided.
Christopher S. Olsen, Tobin Kaufman-Osborn
Filed: 8 Feb 21
Utility
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21 Mar 23
Embodiments of substrate supports for use in a process chamber are provided herein.
Fred Eric Ruhland, Sumit S. Patankar
Filed: 12 Aug 20
Utility
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21 Mar 23
Electronic device processing assemblies including an equipment front end module (EFEM) with at least one side storage pod attached thereto are described.
Paul Reuter, Dean C. Hruzek, Nir Merry, John C. Menk, Douglas B. Baumgarten
Filed: 17 Oct 19
Utility
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21 Mar 23
A system includes an equipment front end module chamber, alignment pedestals housed within the equipment front end module chamber, and a load/unload robot at least partially housed within the equipment front end module chamber.
Nicholas Michael Bergantz
Filed: 9 Aug 21
Utility
6osmfvzx4j496qpzltz1ro9un7ccf6fw3f8nlgr
21 Mar 23
In one example, an electrostatic chuck comprises a chuck body having a top surface configured to support a substrate and a bottom surface opposite the top surface.
Bhaskar Prasad, Kirankumar Neelasandra Savandaiah, Srinivasa Rao Yedla, Nitin Bharadwaj Satyavolu, Hari Prasath Rajendran, Lakshmikanth Krishnamurthy Shirahatti, Thomas Brezoczky
Filed: 18 Sep 20