3198 patents
Page 33 of 160
Utility
Multiple reflectometry for measuring etch parameters
4 Apr 23
A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations.
Blake Erickson, Keith Berding, Michael Kutney, Soumendra Barman, Zhaozhao Zhu, Michelle SanPedro, Suresh Polali Narayana Rao
Filed: 28 Apr 21
Utility
Methods and apparatus for processing a substrate using improved shield configurations
4 Apr 23
Methods and apparatus for processing a substrate using improved shield configurations are provided herein.
Soundarrajan Jembulingam, Jian Janson Chen, Jeonghoon Oh
Filed: 6 Apr 22
Utility
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4 Apr 23
A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film.
Eswaranand Venkatasubramanian, Srinivas Gandikota, Kelvin Chan, Atashi Basu, Abhijit Basu Mallick
Filed: 2 Aug 21
Utility
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4 Apr 23
Methods of selectively depositing films on substrates are described.
Yong Wang, Andrea Leoncini, Doreen Wei Ying Yong, Bhaskar Jyoti Bhuyan, John Sudijono
Filed: 27 Oct 20
Utility
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4 Apr 23
Semiconductor processing methods are described for forming UV-treated, low-κ dielectric films.
Bo Xie, Ruitong Xiong, Sure Ngo, Kang Sub Yim, Yijun Liu, Li-Qun Xia
Filed: 5 Oct 20
Utility
bpu653lys8vw1pukvdx7wytkwss431mzo7q99cd2yu9e7fgfasjh
4 Apr 23
Embodiments disclosed herein include methods of developing a metal oxo photoresist.
Lakmal Charidu Kalutarage, Mark Joseph Saly, Bhaskar Jyoti Bhuyan, Madhur Sachan, Regina Freed
Filed: 15 Jun 21
Utility
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4 Apr 23
An equipment front end module (EFEM) includes sidewalls forming an EFEM chamber configured to receive inert gas from an inert gas supply.
Devendra Channappa Holeyannavar, Sandesh Doddamane Ramappa, Dean C. Hruzek, Michael R. Rice, Jeffrey A. Brodine
Filed: 26 Oct 20
Utility
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4 Apr 23
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described.
Wei-Sheng Lei, Brad Eaton, Madhava Rao Yalamanchili, Saravjeet Singh, Ajay Kumar, James M. Holden
Filed: 29 Dec 20
Utility
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4 Apr 23
A graphene barrier layer is disclosed.
Yong Wu, Srinivas Gandikota, Abhijit Basu Mallick, Srinivas D. Nemani
Filed: 9 Feb 21
Utility
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4 Apr 23
Methods of forming memory devices are described.
Priyadarshi Panda, Seshadri Ganguli, Sang Ho Yu, Sung-Kwan Kang, Gill Yong Lee, Sanjay Natarajan, Rajib Lochan Swain, Jorge Pablo Fernandez
Filed: 9 Nov 21
Utility
rhj0kzal1irostyys7j440k0cxud63m8nw3x
4 Apr 23
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications.
Lin Xue, Chando Park, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala
Filed: 4 Dec 20
Utility
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4 Apr 23
Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate.
Chunlei Zhang, Phillip Criminale, Steven E. Babayan, David Ullstrom
Filed: 8 Oct 19
Utility
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4 Apr 23
Methods of forming 3D NAND devices are discussed.
Thomas Kwon, Xinhai Han
Filed: 16 Sep 21
Utility
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28 Mar 23
Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed.
Uma Sridhar, Sivapackia Ganapathiappan, Ashwin Murugappan Chockalingam, Mayu Felicia Yamamura, Daniel Redfield, Rajeev Bajaj, Yingdong Luo, Nag B. Patibandla
Filed: 9 Jun 20
Utility
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28 Mar 23
Exemplary semiconductor processing methods may include forming a seasoning film on a heater of a processing chamber by a first deposition process.
Jiheng Zhao, Abdul Aziz Khaja, Prashant Kumar Kulshreshtha, Fang Ruan
Filed: 22 Oct 20
Utility
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28 Mar 23
A method of processing a substrate according to a PECVD process is described.
Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
Filed: 3 Sep 20
Utility
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28 Mar 23
Methods for patterning of multi-depth layers for the fabrication of optical devices are provided.
Ludovic Godet, Chien-An Chen, Brian Alexander Cohen, Wayne McMillan, Ian Matthew McMackin
Filed: 8 Dec 21
Utility
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28 Mar 23
Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures.
Christopher S. Olsen, Eric Kihara Shono, Lara Hawrylchak, Agus Sofian Tjandra, Chaitanya A. Prasad, Sairaju Tallavarjula
Filed: 27 Mar 18
Utility
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28 Mar 23
An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region.
Vikram M. Bhosle, Christopher J. Leavitt, Guillermo Colom, Timothy J. Miller
Filed: 13 Aug 21
Utility
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28 Mar 23
Exemplary processing methods may include forming a plasma of a silicon-containing precursor.
Shishi Jiang, Praket Prakash Jha, Abhijit Basu Mallick
Filed: 19 Jul 20