3198 patents
Page 29 of 160
Utility
Ionized gas vent to reduce on wafer static charge and particles
9 May 23
Disclosed is a wafer processing system, a load lock system, a chamber system, and methods of neutralizing static charges and dislodging particles from a wafer.
Narayanan Ramachandran, Devendra Channappa Holeyannavar, Dean Chris Hruzek
Filed: 13 Feb 20
Utility
Identification of an array in a semiconductor specimen
9 May 23
There is provided a method and a system configured obtain an image of a semiconductor specimen including one or more arrays, each including repetitive structural elements, and one or more regions, each region at least partially surrounding a corresponding array and including features different from the repetitive structural elements, wherein the PMC is configured to, during run-time scanning of the semiconductor specimen, perform a correlation analysis between pixel intensity of the image and pixel intensity of a reference image informative of at least one of the repetitive structural elements, to obtain a correlation matrix, use the correlation matrix to distinguish between one or more first areas of the image corresponding to the one or more arrays and one or more second areas of the image corresponding the one or more regions, and output data informative of the one or more first areas of the image.
Yehuda Cohen, Rafael Bistritzer
Filed: 7 Jul 20
Utility
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9 May 23
A scanning electron microscope and a method for evaluating a sample, the method may include (a) illuminating the sample with a primary electron beam, (b) directing secondary electrons emitted from the sample and propagated above a first scintillator, towards an upper portion of the first scintillator, wherein the first scintillator and a second scintillator are positioned between the sample and a column electrode of the column; wherein the first scintillator is positioned above the second scintillator; (c) detecting the secondary electrons by the first scintillator; (d) directing backscattered electrons emitted from the sample towards a lower portion of the second scintillator; and (e) detecting the backscattered electrons by the second scintillator.
Itay Asulin, Emil Weisz, Eitam Yitzchak Vinegrad, Menachem Lapid, Boris Rozensvaig
Filed: 7 Jul 21
Utility
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9 May 23
Semiconductor chamber components are described herein that includes one or more conduits for carrying a fluid between powered and grounded portions of the chamber component, the conduit configure to be less prone to arcing as compared to conventional components.
Stephen Donald Prouty, Alvaro Garcia De Gorordo, Andreas Schmid, Andrew Antoine Noujaim
Filed: 20 Mar 20
Utility
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9 May 23
A system and method for etching workpieces in a uniform manner are disclosed.
Kevin R. Anglin, Simon Ruffell
Filed: 4 May 20
Utility
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9 May 23
Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck.
Akhil Singhal, Allison Yau, Zeqiong Zhao, Sang-Jin Kim, Zhijun Jiang, Deenesh Padhi, Ganesh Balasubramanian
Filed: 16 Oct 20
Utility
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9 May 23
Embodiments of the present disclosure generally relate to methods and apparatus for processing substrates.
Anubhav Srivastava, Bhaskar Prasad, Kirankumar Neelasandra Savandaiah, Thomas Brezoczky, Srinivasa Rao Yedla, Lakshmikanth Krishnamurthy Shirahatti
Filed: 14 Apr 21
Utility
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9 May 23
A support member for a thermal processing chamber is described.
Joseph M. Ranish
Filed: 24 Apr 20
Utility
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9 May 23
A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.
Wenyi Liu, Wei Tang, Srinivas Gandikota, Yixiong Yang, Yong Wu, Jianqiu Guo, Arkaprava Dan, Mandyam Sriram
Filed: 11 May 20
Utility
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9 May 23
In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein the first layer comprises one or more metal oxides of indium (In), gallium (Ga), zinc (Zn), tin (Sn) or combinations thereof.
Dong Kil Yim, Jose-Ignacio Del-Agua Borniquel
Filed: 18 Mar 20
Utility
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9 May 23
A photocurable composition includes quantum dots, quantum dot precursor materials, a chelating agent, one or more monomers, and a photoinitiator.
Yingdong Luo, Daihua Zhang, Hou T. Ng, Sivapackia Ganapathiappan, Nag B. Patibandla
Filed: 28 Aug 20
Utility
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2 May 23
A polishing pad for a semiconductor fabrication operation includes a polishing region and a window region, wherein both regions are made of an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.
Uma Sridhar, Sivapackia Ganapathiappan, Ashwin Murugappan Chockalingam, Rajeev Bajaj, Daniel Redfield, Mayu Felicia Yamamura, Yingdong Luo, Nag B. Patibandla
Filed: 9 Jun 20
Utility
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2 May 23
An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad.
Hassan G. Iravani, Kun Xu, Denis Ivanov, Shih-Haur Shen, Boguslaw A. Swedek
Filed: 6 Aug 19
Utility
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2 May 23
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed.
Sanjay Bhat, Vibhu Jindal, Wen Xiao
Filed: 26 Feb 20
Utility
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2 May 23
Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process.
Prerna Goradia, Jennifer Y. Sun, Xiaowei Wu, Geetika Bajaj, Atul Chaudhari, Ankur Kadam
Filed: 2 May 19
Utility
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2 May 23
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed.
Shuwei Liu, Shiyu Liu, Vibhu Jindal, Azeddine Zerrade, Ramya Ramalingam
Filed: 25 Jan 21
Utility
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2 May 23
Aspects of the disclosure relate to apparatus for the fabrication of waveguides.
Ludovic Godet, Joseph C. Olson, Rutger Meyer Timmerman Thijssen
Filed: 17 Dec 19
Utility
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2 May 23
Exemplary deposition methods may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber.
Aykut Aydin, Rui Cheng, Karthik Janakiraman
Filed: 17 Dec 20
Utility
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2 May 23
A method of patterning a substrate.
Kevin Anglin, Simon Ruffell
Filed: 7 Nov 19
Utility
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2 May 23
Electronic device processing systems including an equipment front end module (EFEM) with a side storage pod are described.
Paul B. Reuter, Dean C. Hruzek, Nir Merry, John C. Menk, Douglas B. Baumgarten
Filed: 22 Nov 21