28912 patents
Page 25 of 1446
Utility
Magnetic Memory Device
21 Dec 23
The present disclosure describes a magnetic memory device.
Chia-Hsiang CHEN, Chih-Yang Chang, Chia Yu Wang, Meng-Chun Shih
Filed: 31 Jul 23
Utility
Semiconductor Structure and Method of Manufacturing the Same
21 Dec 23
A semiconductor structure is provided.
FENG-WEI KUO, CHEWN-PU JOU, HSING-KUO HSIA, CHIH-WEI TSENG
Filed: 17 Jun 22
Utility
Memory Device and Electronic Device
21 Dec 23
Different embodiments of local redundancy decoder circuits that can be used in a memory device are disclosed.
Chien-Yu Huang, Chia-En Huang, Cheng Hung Lee, Hua-Tai Shieh
Filed: 31 Jul 23
Utility
Optical Assembly with Coating and Methods of Use
21 Dec 23
Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems.
Pei-Cheng Hsu, Ping-Hsun Lin, Ta-Cheng Lien, Hsin-Chang Lee
Filed: 4 Aug 23
Utility
Method for Removing Edge of Substrate In Semiconductor Structure
21 Dec 23
A method for treating a semiconductor structure includes: forming the semiconductor structure which includes a carrier substrate, a device substrate, a semiconductor device formed on the device substrate, and a bonding layer formed to bond the semiconductor device with the carrier substrate, the device substrate having an upper surface which is faced upwardly, and which is opposite to the semiconductor device; and directing a chemical fluid to impinge the upper surface of the device substrate so as to remove an edge portion of the device substrate.
Kenichi SANO, Chung-Liang CHENG, De-Yang CHIOU, Kuan-Liang LIU, Pinyen LIN
Filed: 16 Jun 22
Utility
Photoresist Composition and Method of Manufacturing a Semiconductor Device
21 Dec 23
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate.
Chien-Chih CHEN
Filed: 9 Aug 23
Utility
Semiconductor Device and Method for Fabricating the Same
21 Dec 23
A method for forming a semiconductor device includes followings.
Chien-Han Chen, Hung-Chun Chen, Yuan-Chun Chien, Wei Tse Hsu, Yu-Yu Chen, Chien-Chih Chiu
Filed: 16 Jun 22
Utility
Tool Mismatch Reduction Using Aberration Map of the Tools
21 Dec 23
In a method of tool matching, aberration maps of two or more optical systems of two or more scanner tools are determined.
Shih-Chuan HUANG, Sheng-Min WANG, Shih-Ming CHANG, Ken-Hsien HSIEH
Filed: 17 Jun 22
Utility
Semiconductor Device and Method for Forming the Same
21 Dec 23
A method includes forming first sacrificial layers and first channel layers alternately stacked over a substrate; forming second channel layers and second sacrificial layers alternately stacked over the first sacrificial layers and the first channel layers, in which the second channel layers are made of a first semiconductive oxide; performing an etching process to remove portions of the first sacrificial layers and the second sacrificial layers; forming a gate structure in contact with the first channel layers and the second channel layers; forming first source/drain contacts on opposite sides of the gate structure and electrically connected to the first channel layers; and forming second source/drain contacts on the opposite sides of the gate structure and electrically connected to the second channel layers.
Georgios VELLIANITIS, Oreste MADIA, Gerben DOORNBOS, Marcus Johannes Henricus VAN DAL
Filed: 16 Jun 22
Utility
Method of Making Cell Regions of Integrated Circuits
21 Dec 23
A method of manufacturing an integrated circuit (IC) includes forming a first active region in a first cell.
Jia-Hong GAO, Hui-Zhong ZHUANG
Filed: 10 Aug 23
Utility
Fin Structures
21 Dec 23
Provided is a device including a fin structure and methods for forming such a device.
Chun-Yang Lu, Tz-Shian Chen, Li-Ting Wang, Huicheng Chang, Yee-Chia Yeo
Filed: 16 Jun 22
Utility
Semiconductor Devices of Optical Neural Network and Methods of Forming the Same
21 Dec 23
A semiconductor device includes an oxide layer having a first side and a second side opposite to each other.
Weiwei Song, Stefan Rusu
Filed: 20 Jun 22
Utility
Semiconductor Structures and Methods of Forming the Same
21 Dec 23
A method of forming a semiconductor structure includes the following operations.
Jing-Ye Juang, Hsien-Wei Chen, Shin-Puu Jeng
Filed: 13 Jun 22
Utility
Memory Circuit and Method of Operating Same
21 Dec 23
A memory circuit includes a first and a second bit line coupled to a set of memory cells, a local input output circuit including a first and a second data line, a first control circuit configured to generate a first sense amplifier signal and a second sense amplifier signal, a second control circuit configured to generate a first control signal in response to at least a second control signal or a third control signal, a switching circuit configured to transfer a first and second input signal to the corresponding first and second data line during a write operation, and to electrically isolate the first and second data line from the first and second input signal during a read operation, and a first latch configured as a sense amplifier, during the read operation, and configured as a write-in latch, during the write operation.
Hua-Hsin YU, Hau-Tai SHIEH, Cheng Hung LEE, Hung-Jen LIAO
Filed: 20 Jan 23
Utility
Method for Improving Profile of Interconnect Structure
21 Dec 23
A method for manufacturing a semiconductor device includes: forming a patterned dielectric layer over a substrate, the patterned dielectric layer including an interconnect opening having a sidewall surface and a bottom surface; and forming a doped film by an opening-adjustment process, the doped film being disposed on the patterned dielectric layer and extending into the interconnect opening to cover an upper portion of the sidewall surface, so as to adjust a profile of the interconnect opening.
Chun-Neng LIN, Jian-Jou LIAN, Chieh-Wei CHEN
Filed: 16 Jun 22
Utility
Memory Array Connections
21 Dec 23
A device includes a substrate, a first sense amplifier disposed on the substrate, a first word line driver disposed on the substrate and situated adjacent the first sense amplifier in the x-direction, and a first memory array disposed above the first sense amplifier and above the first word line driver in the z-direction.
Chieh LEE, Chia-En Huang, Chun-Ying LEE, Yi-Ching LIU, Yih WANG, Rose Tseng, Yao-Jen Yang, Jonathan Tsung-Yung Chang
Filed: 13 Mar 23
Utility
Semiconductor Device Having Air Gap and Method for Manufacturing the Same
21 Dec 23
A method for manufacturing a semiconductor device includes: forming a patterned mask on a patterned structure disposed on a substrate, such that a first mask portion and a second mask portion of the patterned mask are disposed on a first interconnect feature and a second interconnect feature of the patterned structure, respectively; and subjecting the patterned mask to a plasma treatment process such that the first and second mask portions are deformed to form a capping portion to cap a recess disposed between the first and second interconnect features so as to form an air gap.
Hung-Yu YEN, Keng-Chu LIN
Filed: 16 Jun 22
Utility
Methods for Retrofitting an Etching Apparatus
21 Dec 23
Embodiments are directed to a method of operating a plasma processing system by retrofitting one or more components thereof.
Tai-Jung CHUANG, Chiao-Yuan HSIAO, Yung-Chan CHEN, Wei Kang CHUNG, Yu-Li LIN, Jui Fu HSIEH, Chih-Teng LIAO
Filed: 16 Jun 22
Utility
Interconnect Structure and Method of Forming the Same
21 Dec 23
Provided are an interconnect structure and a method of forming the same.
Ming-Yang Li, Chih-Piao Chuu, Szuya Liao, Han Wang
Filed: 17 Jun 22
Utility
Cyclic Spin-On Coating Process for Forming Dielectric Material
21 Dec 23
The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices.
Je-Ming Kuo, Yen-Chun Huang, Chih-Tang Peng, Tien-I Bao
Filed: 31 Jul 23