28912 patents
Page 22 of 1446
Utility
Semiconductor Device and Manufacturing Method Thereof
28 Dec 23
A semiconductor device includes a plurality of stacks that each includes a plurality of nanostructures stacked over each other, a gate structure wrapping around the nanostructures and extending between the stacks, source and drain structures, and a plurality of fin structures respectively disposed on the stacks.
Li-Zhen Yu, Huan-Chieh Su, Lin-Yu Huang, Chih-Hao Wang
Filed: 27 Jun 22
Utility
Wet Cleaning Tool and Method
28 Dec 23
A semiconductor cleaning tool is provided.
Hsu. Tung. Yen, Ling-Sung Wang, Chen-Chieh Chiang, P.H. Huang, C.L. Lin
Filed: 23 Jun 22
Utility
Multilayer Gate Isolation Structure and Method for Forming the Same
28 Dec 23
Structures and formation methods of a semiconductor device structure are provided.
Hong-Chih CHEN, Wei-Chih KAO, Chun-Yi CHANG, Yu-San CHIEN, Hsin-Che CHIANG, Chun-Sheng LIANG
Filed: 22 Jun 22
Utility
Rail System for Wafer Transportation
28 Dec 23
The present disclosure provides a method to install a rail assembly according to different rail plans.
Guancyun Li, Ching-Jung Chang
Filed: 24 Jun 22
Utility
Semiconductor Device and Manufacturing Method Thereof
28 Dec 23
A method includes forming a channel region above a (110)-orientated substrate and having a length extending in a <100> direction; epitaxial growing a plurality of source/drain regions on either side the channel region; forming a gate structure surrounding the channel region; forming a plurality of source/drain contacts on the source/drain regions.
Wei Ju LEE, Chun-Fu CHENG, Chung-Wei WU, Zhiqiang WU
Filed: 22 Jun 22
Utility
Periodical Correlation Detection for Background Light Suppression In Direct Time-of-flight Sensor
28 Dec 23
A system and a method for time-of-flight (ToF) sensing are provided.
SHANG-FU YEH, CHIN YIN
Filed: 23 Jun 22
Utility
Semiconductor Structure and Method for Forming the Same
28 Dec 23
A semiconductor structure is provided.
Ka-Hing FUNG
Filed: 11 Sep 23
Utility
Photonic Package and Method of Manufacture
28 Dec 23
A package includes a laser diode includes a bonding layer; a first dielectric layer over the laser diode, wherein the first dielectric layer is directly bonded to the bonding layer of the laser diode; a first silicon nitride waveguide in the first dielectric layer, wherein the first silicon nitride waveguide extends over the laser diode; a second dielectric layer over the first silicon nitride waveguide; a silicon waveguide in the second dielectric layer; an interconnect structure over the silicon waveguide; and conductive features extending through the first dielectric layer and the second dielectric layer to electrically contact the interconnect structure.
Tsung-Fu Tsai, Hsing-Kuo Hsia, Szu-Wei Lu, Chen-Hua Yu
Filed: 27 Jun 22
Utility
Integrated Circuit Device and Manufacturing Method Thereof
28 Dec 23
A method of manufacturing an integrated circuit device is provided.
Yi-Ruei JHAN, Kuan-Ting PAN, Wei Ting WANG, Shi Ning JU, Kuo-Cheng CHIANG, Chih-Hao WANG
Filed: 27 Jun 22
Utility
Light Deflection Structure to Increase Optical Coupling
28 Dec 23
Various embodiments of the present disclosure are directed towards a semiconductor device including a dielectric structure disposed on a first substrate.
Chih-Wei Tseng, Jui Lin Chao, Hsing-Kuo Hsia, Yutong Wu, Chen-Hua Yu
Filed: 3 Jan 23
Utility
Metal Layer Protection During Wet Etching
28 Dec 23
Disclosed is a method of fabricating a contact in a semiconductor device.
Kuo-Ju Chen, Su-Hao Liu, Huicheng Chang, Yee-Chia Yeo
Filed: 27 Jun 22
Utility
In-line Electrical Detection of Defects at Wafer Level
28 Dec 23
In a semiconductor manufacturing method includes providing a plurality of patterns on a semiconductor substrate.
Yu-Hsuan Huang, Chien-Liang Chen, Pei-Hsuan Lee
Filed: 28 Jun 22
Utility
Semiconductor Device and Manufacturing Method Thereof
28 Dec 23
Disclosed is a semiconductor device and semiconductor fabrication method.
Chia-Ling Chung, Chun-Chih Cheng, Ying-Liang Chuang, Ming-Hsi Yeh, Kuo-Bin Huang
Filed: 27 Jun 22
Utility
Cooling Cover and Packaged Semiconductor Device Including the Same
28 Dec 23
Cooling covers including trapezoidal cooling chambers for cooling packaged semiconductor devices and methods of forming the same are disclosed.
Chung-Jung Wu, Sheng-Tsung Hsiao, Jen Yu Wang, Tung-Liang Shao, Chih-Hang Tung
Filed: 27 Jun 22
Utility
Semiconductor Device and Method for Manufacturing the Same
28 Dec 23
A method for manufacturing a semiconductor device includes the following steps.
Bo-Jiun Lin, Yu-Chao Lin, Tung-Ying Lee
Filed: 27 Jun 22
Utility
Integrated Circuit Device and Manufacturing Method
28 Dec 23
An integrated circuit (IC) device includes a substrate with a power control circuit, front and back side metal layers, and first and second feed through vias (FTVs).
Chin-Shen LIN, Luk LU, Hao-Tien KAN, Ren-Zheng LIAO
Filed: 2 Sep 22
Utility
Semiconductor Devices and Method of Forming the Same
28 Dec 23
A method of forming a semiconductor device includes the following steps.
Pei Yun Chung, Chun-Chih Cheng, Ying-Liang Chuang, Ming-Hsi Yeh, Kuo-Bin Huang
Filed: 24 Jun 22
Utility
Semiconductor Device and Methods of Manufacturing
28 Dec 23
Some implementations described herein provide techniques and apparatuses for a stacked-die structure including a first integrated circuit device over a second integrated circuit device, where an operating voltage of the first integrated circuit device is different relative to an operating voltage of the second integrated circuit device.
Yu-Lun LU, Tsung-Chieh TSAI, Kong-Beng THEI, Yu-Chang JONG
Filed: 28 Jun 22
Utility
Voltage Amplifier Based on Cascaded Charge Pump Boosting
28 Dec 23
Disclosed herein are related to a system and a method of amplifying an input voltage based on cascaded charge pump boosting.
Chin-Ho Chang, Jaw-Juinn Horng, Yung-Chow Peng
Filed: 10 Aug 23
Utility
Semiconductor Device and Method
28 Dec 23
Embodiments include a FinFET transistor including an embedded resistor disposed in the fin between the source epitaxial region and the source contact.
Kai-Qiang Wen, Shih-Fen Huang, Shih-Chun Fu, Chi-Yuan Shih, Feng Yuan, Wan-Lin Tsai, Chung-Liang Cheng
Filed: 24 Jun 22