28912 patents
Page 29 of 1446
Utility
Semiconductor Device Structure with Oxide Structure and Method for Forming the Same
21 Dec 23
A method for forming a semiconductor device structure is provided.
Chun-Yi CHANG, Hsiao-Chu CHEN, Hong-Chih CHEN, Hsin-Che CHIANG, Chun-Sheng LIANG, Kuo-Hua PAN
Filed: 17 Jun 22
Utility
Gate Isolation Feature and Manufacturing Method Thereof
21 Dec 23
A semiconductor structure includes a plurality of fin structures extending along a first direction, a plurality of gate structure segments positioned along a line extending in a second direction, the second direction being orthogonal to the first direction, wherein the gate structure segments are separated by dummy fin structures.
Kuan-Ting Pan, Huan-Chieh Su, Jia-Chuan You, Shi Ning Ju, Kuo-Cheng Chiang, Yi-Ruei Jhan, Li-Yang Chuang, Chih-Hao Wang
Filed: 28 Jul 23
Utility
Semiconductor Devices and Methods for Increased Capacitance
21 Dec 23
Semiconductor devices having increased capacitance without increased fin height or increased chip area are disclosed.
Cheng-You Tai, Sung-Hsin Yang, Tsung Jing Wu, Jung-Chi Jeng, Ling-Sung Wang, Ru-Shang Hsiao
Filed: 27 Jul 23
Utility
Manufacturing Method of an Input Circuit of a Flip-flop
21 Dec 23
A manufacturing method of an input circuit of a flip-flop including: depositing a first gate strip, a second gate strip, a third gate strip, and a fourth gate strip, wherein a distance between the first and second gate strips, a distance between the second and third gate strips, and a distance between the third and fourth gate strips equal; executing a cut-off operation upon the first gate strip to generate a first first gate strip and a second first gate strip; executing a cut-off operation upon the third gate strip to generate a first third gate strip and a second third gate strip; and directing a first signal to the first first gate strip and the second third gate strip, and a second signal to the second first gate strip and the first third gate strip.
JIN-WEI XU, HUI-ZHONG ZHUANG, CHIH-LIANG CHEN
Filed: 3 Aug 23
Utility
Circuit and Method to Enhance Efficiency of Semiconductor Device
21 Dec 23
A circuit includes a period calculator and a pulse width calculator.
MAO-RUEI LI, MING HSIEN TSAI, RUEY-BIN SHEEN
Filed: 21 Jul 23
Utility
Hybrid Analog-to-digital Converter with Inverter-based Residue Amplifier
21 Dec 23
An apparatus and method for analog to digital conversion of analog input signals are disclosed herein.
Martin KINYUA, Eric SOENEN
Filed: 8 Aug 23
Utility
Eight-transistor Static Random Access Memory, Layout Thereof, and Method for Manufacturing the Same
21 Dec 23
A Static Random Access Memory (SRAM) cell includes a write port including a first inverter including a first pull-up transistor and a first pull-down transistor, and a second inverter including a second pull-up transistor and a second pull-down transistor and cross-coupled with the first inverter; and a read port including a read pass-gate transistor and a read pull-down transistor serially connected to each.
Shau-Wei LU, Hao Chang, Kun-Hsi Li, Kuo-Hung Lo, Kang-Yu Hsu, Yao-Chung Hu
Filed: 7 Aug 23
Utility
Three-dimensional Memory Device and Method of Manufacture
21 Dec 23
In an embodiment, a method includes forming a multi-layer stack including alternating layers of an isolation material and a semiconductor material, patterning the multi-layer stack to form a first channel structure in a first region of the multi-layer stack, where the first channel structure includes the semiconductor material, depositing a memory film layer over the first channel structure, etching a first trench extending through a second region of the multi-layer stack to form a first dummy bit line and a first dummy source line in the second region, where the first dummy bit line and first dummy source line each include the semiconductor material, and replacing the semiconductor material of the first dummy bit line and the first dummy source line with a conductive material to form a first bit line and a first source line.
Bo-Feng Young, Sai-Hooi Yeong, Chi On Chui, Chun-Chieh Lu, Yu-Ming Lin
Filed: 31 Jul 23
Utility
Semiconductor Device Structure and Methods of Forming the Same
21 Dec 23
Various embodiments of the present disclosure provide a memory device and methods of forming the same.
Wen-Ling LU, Yu-Chien CHIU, Chih-Yu CHANG, Hung-Wei LI, Ya-Yun CHENG, Zhiqiang WU, Yu-Ming LIN, Mauricio MANFRINI
Filed: 15 Jun 22
Utility
Gate-last Tri-gate Fefet
21 Dec 23
A semiconductor structure includes an isolation layer; first and second source/drain (S/D) metal electrodes over the isolation layer; a metal gate disposed laterally between the first and the second S/D metal electrodes; a ferroelectric layer on a bottom surface and sidewall surfaces of the metal gate; and an oxide semiconductor layer.
Meng-Han Lin, Chia-En Huang
Filed: 24 Aug 22
Utility
Pyroelectric Device for a Semiconductor Device
21 Dec 23
A pyroelectric generator may be included in the same semiconductor device as a radio frequency (RF) switch (e.g., a phase-change material (PCM) RF switch and/or other types of RF switch).
Fu-Hai LI, Kuen-Yi CHEN, Yi Ching ONG, Kuo-Ching HUANG, Harry Hak Lay CHUANG
Filed: 17 Jun 22
Utility
Magnetic Tunnel Junction Structures and Related Methods
21 Dec 23
The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods.
Mingyuan SONG, Shy-Jay LIN
Filed: 31 Jul 23
Utility
Phase-change Material (PCM) Radio Frequency (RF) Switching Device with Thin Self-aligned Dielectric Layer
21 Dec 23
A phase-change material (PCM) switching device is provided.
Kuo-Pin Chang, Hung-Ju Li, Yu-Wei Ting, Kuo-Ching Huang
Filed: 15 Jun 22
Utility
Diffusion Barrier Layer In Programmable Metallization Cell
21 Dec 23
Some embodiments relate to a method for forming an integrated chip.
Albert Zhong, Cheng-Yuan Tsai, Hai-Dang Trinh, Shing-Chyang Pan
Filed: 31 Jul 23
Utility
Semiconductor structure
19 Dec 23
A structure adapted to optical coupled to an optical fiber includes a photoelectric integrated circuit die, an electric integrated circuit die, a waveguide die and an insulating encapsulant.
Hsien-Wei Chen, Ming-Fa Chen
Filed: 3 May 22
Utility
Device with a recessed gate electrode that has high thickness uniformity
19 Dec 23
Various embodiments of the present disclosure provide a method for forming a recessed gate electrode that has high thickness uniformity.
Hung-Shu Huang, Ming Chyi Liu, Tung-He Chou
Filed: 19 Jul 22
Utility
Extreme ultraviolet mask and method for forming the same
19 Dec 23
A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer.
Yun-Yue Lin
Filed: 13 May 22
Utility
EUV photomask
19 Dec 23
A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a photo catalytic layer disposed on the capping layer, and an absorber layer disposed on the photo catalytic layer and carrying circuit patterns having openings.
Ching-Huang Chen, Chi-Yuan Sun, Hua-Tai Lin, Hsin-Chang Lee, Ming-Wei Chen
Filed: 27 Jul 22
Utility
Layout structure of storage cell and manufacturing method thereof
19 Dec 23
A method of forming a storage cell includes: forming a transistor on a semiconductor substrate; forming a plurality of fuses in at least one conductive layer on the semiconductor substrate to couple a connecting terminal of the transistor; forming a bit line to couple the plurality of fuses; and forming a word line to couple a control terminal of the transistor.
Meng-Sheng Chang, Chia-En Huang, Yih Wang
Filed: 20 Jul 21
Utility
Three-dimensional memory device and manufacturing method thereof
19 Dec 23
A three-dimensional memory device including first and second stacking structures and first and second conductive pillars is provided.
Chao-I Wu, Sai-Hooi Yeong, Yu-Ming Lin, Han-Jong Chia
Filed: 4 Aug 22