28912 patents
Page 33 of 1446
Utility
Integrated Circuit Device and Manufacturing Method of the Same
14 Dec 23
A method is provided, including following operations: identifying a first contact via, a second contact via, or a combination thereof in a first standard cell, wherein the first contact via is coupled between a first active region and a first conductive line on a first side, and the second contact via is coupled between a second active region and a second conductive line on a second side; calculating a first cell height according to a first width of the first and second active regions, and calculating a second cell height according to a second width of the first and second active regions; calculating multiple first available cell heights based on a ratio between the first and second cell heights; generating layout designs of multiple first cells; and manufacturing at least first one element in the integrated circuit based on the layout designs of the first cells.
Ching-Yu HUANG, Wei-Cheng TZENG, Shih-Wei PENG, Wei-Cheng LIN, Jiann-Tyng TZENG
Filed: 26 May 22
Utility
Polishing Pad for Chemical Mechanical Polishing and Method
14 Dec 23
Polishing pads having varying protrusions and methods of forming the same are disclosed.
Te-Chien Hou, Chih Hung Chen, Liang-Che Chen, Shich-Chang Suen, Liang-Guang Chen
Filed: 29 Aug 22
Utility
Semiconductor Structure and Manufacturing Method Thereof
14 Dec 23
A method includes depositing a dielectric layer over a semiconductor substrate; forming a first photoresist layer over the dielectric layer; patterning the first photoresist layer to form through holes, such that a first portion of the first photoresist layer between a first one and a second one of the through holes has a less height than a second portion of the first photoresist layer between the first one and a third one of the through holes; forming a spacer on the first portion of the first photoresist layer; performing an etching process on the dielectric layer to form via holes while the spacer remains covering the first portion of the first photoresist layer; forming a plurality of metal vias in the via holes.
Chin-Ta CHEN, Han-Wei WU, Yuan-Hsiang LUNG, Hua-Tai LIN
Filed: 12 Jun 22
Utility
Semiconductor Device and Method for Forming the Same
14 Dec 23
The present disclosure provides a semiconductor device.
PO CHEN YEH, YI-HSIEN CHANG, FU-CHUN HUANG, CHING-HUI LIN, CHIAHUNG LIU, SHIH-FEN HUANG, CHUN-REN CHENG
Filed: 10 Jun 22
Utility
Semiconductor Device and Method of Forming Redistribution Structures of Conductive Elements
14 Dec 23
A semiconductor device and method of manufacture in which a first semiconductor die is disposed along a first redistribution structure, and a second redistribution structure is disposed along an opposite side of the first redistribution structure.
Ho Che Yu, Fong-yuan Chang, Ting-Chieh Hsu, Chun-Hua Chang
Filed: 8 Jun 22
Utility
Edge Couplers and Methods of Making the Same
14 Dec 23
Disclosed are edge couplers having a high coupling efficiency and low polarization dependent loss, and methods of making the edge couplers.
Min-Hsiang HSU, Chewn-Pu Jou, Chan-Hong Chern, Cheng-Tse Tang, Yung-Jr Hung, Lan-Chou Cho
Filed: 9 Aug 23
Utility
Semiconductor Device Including Metal Surrounding Via Contact and Method of Forming the Semiconductor Device
14 Dec 23
A semiconductor device includes a substrate, a source/drain region disposed in the substrate, a silicide structure disposed on the source/drain region, a first dielectric layer disposed over the substrate, a conductive contact disposed in the first dielectric layer and over the silicide structure, a second dielectric layer disposed over the first dielectric layer, a via contact disposed in the second dielectric layer and connected to the conductive contact, and a first metal surrounding the via contact.
Shuen-Shin LIANG, Chia-Hung CHU, Po-Chin CHANG, Hsu-Kai CHANG, Kuan-Kan HU, Ken-Yu CHANG, Hung-Yi HUANG, Harry CHIEN, Wei-Yip LOH, Chun-I TSAI, Hong-Mao LEE, Sung-Li WANG, Pinyen LIN, Chuan-Hui SHEN
Filed: 9 Jun 22
Utility
Novel Jitter Noise Detector
14 Dec 23
A noise detection circuit includes a first transistor configured to receive a delayed version of a clock signal; a second transistor configured to receive a delayed version of a reference clock signal; and a latch circuit, coupled to the first transistor at a first node and coupled to the second transistor at a second node, and configured to latch logic states of voltage levels at the first and second nodes, respectively, based on whether a timing difference between transition edges of the clock signal and the reference clock signal exceeds a pre-defined timing offset threshold.
Tien-Chien HUANG
Filed: 9 Aug 23
Utility
Semiconductor Devices and Methods of Forming the Same
14 Dec 23
A method of forming a semiconductor device includes following operations.
Yan-Ming Tsai, Wei-Yip Loh, Harry CHIEN, Chih-Shiun Chou, Hong-Mao Lee, Chih-Wei Chang, Ming-Hsing Tsai
Filed: 12 Jun 22
Utility
Method of Measuring Electro-optic Characteristic of a Traveling Wave Mach-zehnder Modulator and Device for Same
14 Dec 23
A method of characterizing a traveling-wave Mach-Zehnder modulator (TWMZM) includes measuring an electrooptic parameter, such as S21, of a test structure including a test TWMZM and a first instance of electrical pads which are connected to deliver a radio frequency (RF) signal to electrooptically modulate light traveling through the test TWMZM.
Ming Yang Jung, Lan-Chou Cho, Stefan Rusu
Filed: 8 Jun 22
Utility
Selective Etching Method and Semiconductor Structure Manufactured Using the Same
14 Dec 23
A method for manufacturing a semiconductor structure includes forming a semiconductor portion which has an exposed region; forming two fin sidewalls which are disposed at two opposite sides of the exposed region of the semiconductor portion, and which include a dielectric material; and performing an etching process such that the exposed region of the semiconductor portion is etched away to form a recess while a protection layer is formed to protect each of the fin sidewalls during the etching process.
Kuan-Da HUANG, Chun-Fu KUO, Yi-Hsing YU, Li-Te LIN
Filed: 9 Jun 22
Utility
Mitigating Long-term Energy Decay of Laser Devices
14 Dec 23
An apparatus for manufacturing semiconductors includes a power amplifier to power a laser, a catalyst disposed in the power amplifier, an inlet port, and an exhaust port.
Chih-Ping YEN, Yen-Shuo SU, Jui-Pin WU, Chun-Lin CHANG, Han-Lung CHANG, Heng-Hsin LIU
Filed: 15 Jun 23
Utility
Method for Filling Trench In Semiconductor Device
14 Dec 23
A method includes: applying a first solution to a semiconductor structure of a semiconductor device to form a first coating, the semiconductor structure including a feature and the trench, the first coating being formed in the trench and over the feature, the first solution containing a metal-containing solute; heating the first coating in a multi-step procedure to turn the first coating into a first film, the multi-step procedure including heating at a first temperature, followed by heating at a second temperature not lower than the first temperature; applying a second solution onto the first film to form a second coating, the second solution containing the metal-containing solute; and heating the second coating in a multi-step procedure to turn the second coating into a second film, the multi-step procedure including heating at a third temperature, followed by heating at a fourth temperature not lower than the third temperature.
Kenichi SANO, Andrew Joseph KELLY, Yu-Wei LU, Chin-Hsiang LIN, Chia-Yun CHENG
Filed: 9 Jun 22
Utility
Method, System and Computer Program Product for Integrated Circuit Design
14 Dec 23
A method executed at least partially by a processor includes determining a power parameter associated with a cell in an integrated circuit (IC) layout diagram.
Chin-Shen LIN, Hiranmay BISWAS, Kuo-Nan YANG, Chung-Hsing WANG
Filed: 9 Aug 23
Utility
Semiconductor Device
14 Dec 23
A semiconductor device including a first semiconductor die, a second semiconductor die, thermal silicon substrates and an encapsulation is provided.
Yu-Hung Lin, Shih-Peng Tai, Kuo-Chung Yee, Chen-Hua Yu, Wei-Ming Wang
Filed: 18 May 22
Utility
Optical Sensor and Methods of Making the Same
14 Dec 23
Optical sensors and their making methods are described herein.
You-Cheng JHANG, Han-Zong PAN, Wei-Ding WU, Jiu-Chun WENG, Hsin-Yu CHEN, Cheng-San CHOU, Chin-Min LIN
Filed: 10 Aug 23
Utility
Method for Fabricating Mask
14 Dec 23
A method for fabricating a mask is provided.
Ping-Hsun LIN, Hung-Yi TSAI, Hao-Ping CHENG, Ta-Cheng LIEN, Hsin-Chang LEE
Filed: 9 Jun 22
Utility
Integrated Circuit Having Hybrid Sheet Structure
14 Dec 23
An integrated circuit (IC) includes first through fourth nano-sheet structures extending in a first direction and having respective first through fourth widths along a second direction perpendicular to the first direction, and first through fourth via structures electrically connected to corresponding ones of the first through fourth nano-sheet structures.
Shang-Wei FANG, Kam-Tou SIO, Wei-Cheng LIN, Jiann-Tyng TZENG, Lee-Chung LU, Yi-Kan CHENG, Chung-Hsing WANG
Filed: 10 Aug 23
Utility
Graphene-metal Hybrid Interconnect
14 Dec 23
Material properties of graphene can be leveraged to improve performance of interconnects in an integrated circuit.
Jian-Hong LIN, Yinlung LU, Jun HE, Hsuan-Ming HUANG, Hsin-Chun CHANG
Filed: 8 Jun 22
Utility
Photonic Device, System and Method of Making Same
14 Dec 23
Photonic device, system and methods of making photonic devices and systems, the method including: providing a substrate, forming an insulator layer over the substrate, depositing a plurality of waveguide layers and a plurality of insulator spacers at different vertical levels over the insulator layer, wherein adjacent waveguide layers in the plurality of waveguide layers are isolated by one or more insulator spacers in the plurality of insulator spacers, and forming a plurality of waveguide patterns at the plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the plurality of waveguide patterns are coupled.
Weiwei SONG, Stefan RUSU
Filed: 9 Jun 22