7578 patents
Page 23 of 379
Utility
Semiconductor Processing Chambers and Methods for Deposition and Etch
26 Oct 23
Exemplary semiconductor substrate supports may include a pedestal shaft.
Khokan Chandra Paul, Ravikumar Patil, Vijet Patil, Carlaton Wong, Adam J. Fischbach, Timothy Franklin, Tsutomu Tanaka, Canfeng Lai
Filed: 28 Jun 23
Utility
Oled Panel with Inorganic Pixel Encapsulating Barrier
26 Oct 23
Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display.
Ji-young CHOUNG, Dieter HAAS, Yu Hsin LIN, Jungmin LEE, Seong Ho YOO, Si Kyoung KIM
Filed: 30 Jun 23
Utility
Method of Using Dual Frequency RF Power In a Process Chamber
26 Oct 23
Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber.
Anup Kumar SINGH, Rick KUSTRA, Vinayak Vishwanath HASSAN, Bhaskar KUMAR, Krishna NITTALA, Pramit MANNA, Kaushik ALAYAVALLI, Ganesh BALASUBRAMANIAN
Filed: 27 Jun 23
Utility
Methods for Reducing Surface Defects In Active Film Layers
26 Oct 23
A method of reducing surface defects of a piezoelectric film layer includes depositing a first seed layer on a substrate, depositing an intermediate film layer on the first seed layer at a first temperature of approximately 350 degrees Celsius to approximately 700 degrees Celsius, depositing a second seed layer on the intermediate film layer, and depositing a piezoelectric film layer at a second temperature of less than 200 degrees Celsius.
Ming GAO, Lizhong SUN, Xiaodong YANG
Filed: 12 Aug 22
Utility
Gasbox for Semiconductor Processing Chamber
26 Oct 23
Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface.
Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
Filed: 3 Jul 23
Utility
High Critical Temperature Metal Nitride Layer with Oxide or Oxynitride Seed Layer
26 Oct 23
A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer.
Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
Filed: 1 Mar 23
Utility
High-density Micro-led Arrays with Reflective Sidewalls
26 Oct 23
Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate.
Kai Ding, Lisong Xu, Mingwei Zhu, Zhiyong Li, Hou T. Ng, Sivapackia Ganapathiappan, Nag Patibandla
Filed: 24 Apr 23
Utility
Methods and Apparatus for Processing a Substrate
26 Oct 23
Methods and apparatus for processing a substrate are provided herein.
Yue GUO, Katsumasa KAWASAKI, Kartik RAMASWAMY, Yang YANG, Nicolas John BRIGHT
Filed: 22 Apr 22
Utility
Gapfill Process Using Pulsed High-Frequency Radio-Frequency (HFRF) Plasma
26 Oct 23
Methods for forming a metal carbide liner in features formed in a substrate surface are described.
Rui Cheng, Guoqing Li, Qinghua Zhao
Filed: 29 Jun 23
Utility
RepublicationCapacitive Sensing Data Integration for Plasma Chamber Condition Monitoring
26 Oct 23
Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described.
Yaoling Pan, Patrick John Tae, Michael D. Willwerth, Leonard Tedeschi, Kiyki-Shiy N. Shang, Mikhail V. Taraboukhine, Charles R. Hardy, Sivasankar Nagarajan
Filed: 29 Nov 22
Utility
High Throughput Defect Detection
26 Oct 23
A method for high throughput defect detection, the method may include (i) performing, using first detection channels, a simultaneous inspection process through a segmented pupil plane that comprises multiple pupil plane segments to select one or more pupil plane segments of interest out of multiple pupil plane segments; (ii) configuring one or more configurable filters related to second detection channels to pass radiation received from the one or more pupil plane segment of interest and to block radiation received from one or more non-of-interest pupil plane segments; and (iii) performing, using the second detection channels, a partially masked pupil plane inspection process.
Boris Golberg
Filed: 26 Apr 22
Utility
In-situ Low Temperature Measurement of Low Emissivity Substrates
26 Oct 23
A system for degassing substrates provides reduced infrared sources in a degas chamber.
Prashant AGARWAL, Tuck Foong KOH, Ananthkrishna JUPUDI
Filed: 22 Apr 22
Utility
Bayesian Decomposition for Mismatched Performances In Semiconductor Equipment
26 Oct 23
Bayesian inference and modeling techniques, along with model decomposition may be used to improve mismatch performances in semiconductor processing devices by identifying sources of intrinsic and extrinsic variations in performance.
Liem Ferryanto, Binbin Wang, Ravi C. Edupuganti, Anshul Ashok Vyas
Filed: 24 Apr 22
Utility
Gradient Oxidation and Etch for PVD Metal As Bottom Liner In Bottom Up Gap Fill
26 Oct 23
A method and apparatus for a gap-fill in semiconductor devices are provided.
Chih-Hsun HSU, Shiyu YUE, Wei LEI, Yi XU, Jiang LU, Yu LEI, Ziye XIONG, Tsung-Han YANG, Zhimin QI, Aixi ZHANG, Jie ZHANG, Liqi WU, Rongjun WANG, Shihchung CHEN, Meng-Shan WU, Chun-Chieh WANG, Annamalai LAKSHMANAN, Yixiong YANG, Xianmin TANG
Filed: 19 Jul 22
Utility
Method of In-situ Selective Metal Removal Via Gradient Oxidation for Gapfill
26 Oct 23
A method and apparatus for a gap-fill in semiconductor devices are provided.
Chih-Hsun HSU, Shiyu YUE, Jiang LU, Rongjun WANG, Xianmin TANG, Zhenjiang CUI, Chi Hong CHING, Meng-Shan WU, Chun-chieh WANG, Wei LEI, Yu LEI
Filed: 28 Nov 22
Utility
Gradient Oxidation and Etch of PVD Molybdenum for Bottom Up Gap Fill
26 Oct 23
A method and apparatus for a gap-fill in semiconductor devices are provided.
Meng-Shan WU, Chih-Hsun HSU, Jiang LU, Shiyu YUE, Chun-chieh WANG, Annamalai LAKSHMANAN, Yixiong YANG
Filed: 30 Mar 23
Utility
Chamber Components with Polished Internal Apertures
26 Oct 23
Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same.
Jennifer Y. Sun, Vahid Firouzdor, David Koonce, Biraja Prasad Kanungo
Filed: 28 Jun 23
Utility
Substrate Polish Edge Uniformity Control with Secondary Fluid Dispense
26 Oct 23
A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein.
Justin H. WONG, Kevin H. SONG
Filed: 28 Jun 23
Utility
Gas Delivery for Tungsten-containing Layer
26 Oct 23
A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate.
Zubin HUANG, Mohammed Jaheer SHERFUDEEN, David Matthew SANTI, Jallepally Ravi, Peiqi WANG, Kai WU
Filed: 26 Apr 22
Utility
Air Shrouds with Integrated Heat Exchanger
26 Oct 23
A heating module for a substrate processing chamber includes heating lamps coupled to a reflector plate and a heat exchanger.
Abraham PALATY, Vinodh RAMACHANDRAN, Shu-Kwan LAU, Shainish NELLIKKA, Raja Murali DHAMODHARAN, Danny D. WANG
Filed: 26 Apr 22