28912 patents
Page 15 of 1446
Utility
Semiconductor Structure and Method for Manufacturing the Same
4 Jan 24
Semiconductor structures and methods for manufacturing the same are provided.
Li-Zhen YU, Chung-Liang CHENG, Wen-Ting LAN, Lin-Yu HUANG
Filed: 29 Jun 22
Utility
Euv Source Stabilization Apparatus and Method
4 Jan 24
To improve EUV emission stability, bumps and eaves are added to the interior wall of a rotating crucible that produces EUV light by vaporizing a pre-heated metal, such as tin, using a laser.
Tzu Jeng HSU, Shy-Jay LIN, Chih-Wei WEN, Hsin-Fu TSENG, Chien-Hsing LU, Chih-Chiang TU
Filed: 6 Mar 23
Utility
Hard Mask Trimming In Method for Manufacturing Semiconductor Device
4 Jan 24
A method for manufacturing a semiconductor device includes: forming a patterned hard mask on a patterned structure disposed on a substrate, such that a hard mask portion of the patterned hard mask is disposed on a fin portion of the patterned structure; and laterally trimming the hard mask portion by a lateral etching process.
Chia-Chien KUANG, Tze-Chung LIN, Li-Te LIN
Filed: 1 Jul 22
Utility
Method of Performing Inter-site Backup Processing of Wafer Lots
4 Jan 24
A method includes: receiving an auxiliary routing request from a manufacturing execution system (MES) apparatus of a first site by an inter-site backup management apparatus; selecting an auxiliary route to a second site based on the auxiliary routing request and a statistical model by the inter-site backup management apparatus; including the auxiliary route in a route associated with a wafer lot by the MES apparatus; and performing a semiconductor processing operation on a wafer of the wafer lot according to the route.
Mei-Hsuan Lin, Rong Syuan Fan, Jen-Yuan Chang
Filed: 30 Jun 22
Utility
Semiconductor Device and Manufacturing Method Thereof
4 Jan 24
A device includes a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a front-side interconnection structure, and a backside via.
Li-Zhen YU, Lin-Yu HUANG, Huan-Chieh SU, Lo-Heng CHANG, Meng-Huan JAO, Chih-Hao WANG
Filed: 29 Jun 22
Utility
System and Method for Measuring Magnetic Fields In PVD System
4 Jan 24
A thin-film deposition system includes a thin-film deposition chamber.
Wen-Hao CHENG, Hsuan-Chih CHU, Yen-Yu CHEN
Filed: 30 Jun 22
Utility
Semiconductor Device Including a Self-formed Barrier Metal Layer
4 Jan 24
Shih-Kang FU, Hsien-Chang WU, Ming-Han LEE, Shau-Lin SHUE
Filed: 30 Jun 22
Utility
Optical Ring Resonators
4 Jan 24
An optical device includes a ring resonator, a first optical waveguide with an end portion merged into a circumference of the ring resonator, and a second optical waveguide free of contact with the circumference of the ring resonator.
Wen-Hao CHENG
Filed: 24 Apr 23
Utility
Method for Manufacturing a Semiconductor Device
4 Jan 24
A method for manufacturing a semiconductor device includes: forming a first type well in a substrate; and after forming the first type well in the substrate, forming a second type well in the substrate, where the second type well has a conductivity type different from that of the first type well.
Bau-Ming WANG, Liang-Yin CHEN, Huicheng CHANG, Yee-Chia YEO
Filed: 30 Jun 22
Utility
Methods and Systems for Dry Etching
4 Jan 24
Methods and systems for dry etching are disclosed.
Chien-Liang Chen, Shao-Chien Hsu, Jung-Wang Lu, Meng-Chang Wu
Filed: 1 Jul 22
Utility
Semiconductor Device Including Conductive Nitride Feature and Method of Making the Semiconductor Device
4 Jan 24
A semiconductor device includes a semiconductor structure, a conductive nitride feature, a third dielectric feature, and a conductive line feature.
Po-Chin CHANG, Yuting CHENG, Hsu-Kai CHANG, Chia-Hung CHU, Tzu-Pei CHEN, Shuen-Shin LIANG, Sung-Li WANG, Pinyen LIN, Lin-Yu HUANG
Filed: 30 Jun 22
Utility
Package with Improved Heat Dissipation Efficiency and Method for Forming the Same
4 Jan 24
In an embodiment, a package includes an interposer; a first integrated circuit device attached to the interposer, wherein the first integrated circuit device includes a die and a heat dissipation structure, the die having an active surface facing the interposer and an inactive surface opposite to the active surface, the heat dissipation structure attached to the inactive surface of the die and including a plurality of channels recessed from a first surface of the heat dissipation structure, the first surface of the heat dissipation structure facing away from the die; and an encapsulant disposed on the interposer and laterally around the die and the heat dissipation structure, wherein a top surface of the encapsulant is coplanar with the top surface of the heat dissipation structure.
Hung-Yi Kuo, Chen-Hua Yu, Kuo-Chung Yee, Cheng-Chieh Hsieh, Chung-Ju Lee, Szu-Wei Lu
Filed: 1 Jul 22
Utility
Semiconductor Device and Method of Forming the Same
4 Jan 24
A method of forming a semiconductor device is provided.
Wu-Wei Tsai, Po-Ting Lin, Kai-Wen Cheng, Sai-Hooi Yeong, Han-Ting Tsai, Ya-Ling Lee, Hai-Ching Chen, Chung-Te Lin, Yu-Ming Lin
Filed: 3 Jul 22
Utility
Power Rail and Signal Line Arrangement In Integrated Circuits Having Stacked Transistors
4 Jan 24
A method includes fabricating a first-type active-region semiconductor, depositing a layer of dielectric material covering the first-type active-region semiconductor structure, and fabricating a second-type active-region semiconductor structure atop the layer of dielectric material.
Chih-Liang CHEN, Guo-Huei WU, Ching-Wei TSAI, Shang-Wen CHANG, Li-Chun TIEN
Filed: 18 Sep 23
Utility
Semiconductor Device
4 Jan 24
Semiconductor devices are provided.
Jhon-Jhy LIAW
Filed: 29 Jun 22
Utility
Multi-Gate Transistor Structure
4 Jan 24
A semiconductor device according to the present disclosure includes a first channel member including a first channel portion and a first connection portion, a second channel member including a second channel portion and a second connection portion, a gate structure disposed around the first channel portion and the second channel portion, and an inner spacer feature disposed between the first connection portion and the second connection portion.
Jhon Jhy Liaw
Filed: 18 Sep 23
Utility
Memory Structure
4 Jan 24
A memory structure includes a static random access memory (SRAM) cell having a first pass-gate transistor and a second pass-gate transistor, a word-line conductor extending in a first direction, a first source/drain contact, a second source/drain contact, a bit-line conductor in a second direction, and a bit-line-bar conductor extending in the second direction.
Jhon-Jhy LIAW
Filed: 29 Jun 22
Utility
Semiconductor Device and Method
4 Jan 24
A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps.
Ching-Feng Fu, Guan-Ren Wang, Yun-Min Chang, Yu-Lien Huang
Filed: 29 Jun 23
Utility
Selective Deposition of Metal Barrier in Damascene Processes
4 Jan 24
A method of forming an integrated circuit structure includes forming an etch stop layer over a conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in the dielectric layer to reveal the etch stop layer, and etching the etch stop layer through the opening using an etchant comprising an inhibitor.
Chia-Pang Kuo, Ya-Lien Lee, Chieh-Yi Shen
Filed: 2 Aug 23
Utility
Semiconductor Die Assembly Having a Polygonal Linking Die
4 Jan 24
A semiconductor die assembly is provided.
Jen-Yuan Chang
Filed: 3 Jul 22