28912 patents
Page 15 of 1446
Utility
Semiconductor Device
4 Jan 24
A semiconductor device includes first and second conductive layers, a first epitaxial structure and a first via structure.
Ching-Yu HUANG, Shih-Wei PENG, Chia-Tien WU, Wei-Cheng LIN, Jiann-Tyng TZENG
Filed: 30 Jun 22
Utility
Pellicle Membrane with Improved Properties
4 Jan 24
A pellicle assembly includes a pellicle membrane with a nanotube layer formed from thick nanotube bundles.
Pei-Cheng Hsu, Wei-Hao Lee, Ting-Pi Sun, Chia-Tung Kuo, Huan-Ling Lee, Hsin-Chang Lee, Chin-Hsiang Lin
Filed: 30 Jun 22
Utility
Semiconductor Stack Structure and Manufacturing Method Thereof
4 Jan 24
Disclosed are a semiconductor stack structure and a manufacturing method of a semiconductor stack structure.
Chuei-Tang Wang, Chien-Yuan Huang, Shih-Chang Ku
Filed: 30 Jun 22
Utility
Radiation Collector
4 Jan 24
Methods and apparatuses for a lithography exposure process are described.
Cheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
Filed: 30 Jun 22
Utility
Semiconductor Structure
4 Jan 24
A semiconductor structure is provided.
Jhon-Jhy LIAW
Filed: 29 Jun 22
Utility
Lithography System and Method Including Thermal Management
4 Jan 24
The present disclosure provides a method for lithography system that includes one or more thermal sensors that provide feedback to a thermal management controller.
Chia-Wei WANG
Filed: 25 Jan 23
Utility
Semiconductor Structure and Method for Manufacturing the Same
4 Jan 24
Semiconductor structures and methods for manufacturing the same are provided.
Li-Zhen YU, Chung-Liang CHENG, Wen-Ting LAN, Lin-Yu HUANG
Filed: 29 Jun 22
Utility
Euv Source Stabilization Apparatus and Method
4 Jan 24
To improve EUV emission stability, bumps and eaves are added to the interior wall of a rotating crucible that produces EUV light by vaporizing a pre-heated metal, such as tin, using a laser.
Tzu Jeng HSU, Shy-Jay LIN, Chih-Wei WEN, Hsin-Fu TSENG, Chien-Hsing LU, Chih-Chiang TU
Filed: 6 Mar 23
Utility
Semiconductor Device and Manufacturing Method Thereof
4 Jan 24
A device includes a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a front-side interconnection structure, and a backside via.
Li-Zhen YU, Lin-Yu HUANG, Huan-Chieh SU, Lo-Heng CHANG, Meng-Huan JAO, Chih-Hao WANG
Filed: 29 Jun 22
Utility
Methods and Systems for Dry Etching
4 Jan 24
Methods and systems for dry etching are disclosed.
Chien-Liang Chen, Shao-Chien Hsu, Jung-Wang Lu, Meng-Chang Wu
Filed: 1 Jul 22
Utility
Semiconductor Device Including Conductive Nitride Feature and Method of Making the Semiconductor Device
4 Jan 24
A semiconductor device includes a semiconductor structure, a conductive nitride feature, a third dielectric feature, and a conductive line feature.
Po-Chin CHANG, Yuting CHENG, Hsu-Kai CHANG, Chia-Hung CHU, Tzu-Pei CHEN, Shuen-Shin LIANG, Sung-Li WANG, Pinyen LIN, Lin-Yu HUANG
Filed: 30 Jun 22
Utility
Apparatuses and Methods for Reducing Particle Contamination of Wafers During Transfer
4 Jan 24
A load-lock chamber with reduced particle contamination is disclosed.
Zheng-Hao Zhang, Hsin Yi Tseng, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
Filed: 30 Jun 22
Utility
Semiconductor Device and Method of Forming the Same
4 Jan 24
A method of forming a semiconductor device is provided.
Wu-Wei Tsai, Po-Ting Lin, Kai-Wen Cheng, Sai-Hooi Yeong, Han-Ting Tsai, Ya-Ling Lee, Hai-Ching Chen, Chung-Te Lin, Yu-Ming Lin
Filed: 3 Jul 22
Utility
Chamber Liner for Semiconductor Processing
4 Jan 24
A chamber liner for a semiconductor process chamber.
Chien-Liang Chen, Wei-Da Chen, Yu-Ning Cheng
Filed: 30 Jun 22
Utility
Semiconductor Device
4 Jan 24
Semiconductor devices are provided.
Jhon-Jhy LIAW
Filed: 29 Jun 22
Utility
Selective Deposition of Metal Barrier in Damascene Processes
4 Jan 24
A method of forming an integrated circuit structure includes forming an etch stop layer over a conductive feature, forming a dielectric layer over the etch stop layer, forming an opening in the dielectric layer to reveal the etch stop layer, and etching the etch stop layer through the opening using an etchant comprising an inhibitor.
Chia-Pang Kuo, Ya-Lien Lee, Chieh-Yi Shen
Filed: 2 Aug 23
Utility
Memory Structure
4 Jan 24
A memory structure includes a static random access memory (SRAM) cell having a first pass-gate transistor and a second pass-gate transistor, a word-line conductor extending in a first direction, a first source/drain contact, a second source/drain contact, a bit-line conductor in a second direction, and a bit-line-bar conductor extending in the second direction.
Jhon-Jhy LIAW
Filed: 29 Jun 22
Utility
Cmos Well Regions with High Dopant Activation Level and Reduced Extended Defects
4 Jan 24
A method of fabricating an integrated circuit (IC) is provided.
Yi-Fan Chen, Sen-Hong Syue, Huicheng Chang, Yee-Chia Yeo
Filed: 24 May 22
Utility
Package with Improved Heat Dissipation Efficiency and Method for Forming the Same
4 Jan 24
In an embodiment, a package includes an interposer; a first integrated circuit device attached to the interposer, wherein the first integrated circuit device includes a die and a heat dissipation structure, the die having an active surface facing the interposer and an inactive surface opposite to the active surface, the heat dissipation structure attached to the inactive surface of the die and including a plurality of channels recessed from a first surface of the heat dissipation structure, the first surface of the heat dissipation structure facing away from the die; and an encapsulant disposed on the interposer and laterally around the die and the heat dissipation structure, wherein a top surface of the encapsulant is coplanar with the top surface of the heat dissipation structure.
Hung-Yi Kuo, Chen-Hua Yu, Kuo-Chung Yee, Cheng-Chieh Hsieh, Chung-Ju Lee, Szu-Wei Lu
Filed: 1 Jul 22
Utility
Semiconductor Structure and Method of Manufacturing the Same
4 Jan 24
A semiconductor structure is provided.
KUAN-LIANG LIU, CHUNG-LIANG CHENG, YEN LIANG WU, CHUNG-YUAN LI, YA CHUN TENG
Filed: 3 Jul 22